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Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate
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作者 吴承龙 杨建红 +1 位作者 蔡雪原 单晓锋 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第3期50-53,共4页
The structure of organic thin film transistors (OTFTs) is optimized by introducing a floating gate into the gate dielectric to reduce the threshold voltage of OTFTs. Then the optimized device is simulated, and the s... The structure of organic thin film transistors (OTFTs) is optimized by introducing a floating gate into the gate dielectric to reduce the threshold voltage of OTFTs. Then the optimized device is simulated, and the simulation results show that the threshold voltage of optimized device is reduced by about 10 V. The reduction of the threshold voltage is helpful and useful for the application of OTFTs in many areas. In addition, this way of reducing the threshold voltage of OTFT is compatible with traditional silicon technology and can be used in manufacturing. 展开更多
关键词 pentacene otft device optimization Pool-Frenkel mobility simulation
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