We investigate the impact of random telegraph noise（RTN） on the threshold voltage of multi-level NOR flash memory.It is found that the threshold voltage variation（？Vth） and the distribution due to RTN increase wi...We investigate the impact of random telegraph noise（RTN） on the threshold voltage of multi-level NOR flash memory.It is found that the threshold voltage variation（？Vth） and the distribution due to RTN increase with the programmed level（Vth） of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.展开更多
基金supported by the National Research Program of China(Grant No.2016YFB0400402)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20141321)the National Natural Science Foundation of China(Grant No.61627804)
文摘We investigate the impact of random telegraph noise（RTN） on the threshold voltage of multi-level NOR flash memory.It is found that the threshold voltage variation（？Vth） and the distribution due to RTN increase with the programmed level（Vth） of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.
