Unified Coordinate System Model for Performance Calculation of Fix-pad Journal Bearing with Different Pad Preload

Traditional model for calculating performance parameters of a fix-pad journal bearing leads to heavy workload, complicated and changeable formulae as it requires deriving various geometric formulae with different bearing types such as circular journal bearing, dislocated bearing and elliptic bearing. Considering different pad preload ratios for non-standard bearing, traditional model not only becomes more complicated but also reduces scalability and promotion of the calculation programs. For the complexly case of traditional model while dealing with various fix-pad journal bearings, unified coordinate system model for performance calculation of fix-pad journal bearing is presented in the paper. A unified coordinate system with the bearing center at the origin is established, and the eccentricity ratio and attitude angle of axis relative to each pad are calculated through the coordinates of journal center and each pad center. Geometric description of fix-pad journal bearing is unified in this model, which can be used for both various standard bearing and non-standard bearing with different pad preload ratios. Validity of this model is verified with an elliptical bearing. Performance of a non-standard four-leaf bearing with different pad preload ratios is calculated based on this model. The calculation result shows that increasing preload ratio of the pad 1 and keeping that of the left three pads constant improves bearing capacity, stiffness and damping coefficients. This research presents a unified coordinate system model unifies performance calculation of fix-pad journal bearings and studied a non-standard four-leaf bearing with different pad preload ratios, the research conclusions provides new methods for performance calculation of fix-pad journal bearings.

Satellite Constellation Configuration Design with Rapid Performance Calculation and Ordinal Optimization

Satellite constellation configuration design is a complicated and time-consuming simulation optimization problem. In this paper, a new method called the rapid method for satellite constellation performance calculation is developed by the Hermite interpolation technique to reduce the computing complication and time. The constellation configuration optimization model is established on the basis of the rapid performance calculation. To reduce the search space and enhance the optimization efficiency, this paper presents a new constellation optimization strategy based on the ordinal optimization （00） theory and expands the algorithm realization for constellation optimization including precise and crude models, ordered performance curves, selection rules and selected subsets. Two experiments about navigation constellation and space based surveillance system （SBSS） are carried out and the analysis of simulation results indicates that the ordinal optimization for satellite constellation configuration design is effective.

Predicted High Thermoelectric Performance of Quasi-Two-Dimensional Compound GeAs Using First-Principles Calculations

The electronic structure of binary quasi-two-dimensional GeAs is investigated using first-principles calculations, and it is found that the anisotropic structure of the layered compound GeAs brings about the anisotropy of the transport properties. Meanwhile, the band structure of GeAs exhibits a relatively large dispersion near the valence-band maximum in the Z –V direction while it is rather flat in the Z –Γ direction, which is highly desirable for good thermoelectric performance. The calculated partial charge density distribution also reveals that GeAs possesses anisotropic electrical conductivity. Based on the semi-classical Boltzmann transport theory, the anisotropic transport properties are observed, and the optimal doping concentrations are estimated. The temperature dependence transport properties of p-type GeAs are compared with the experimental data in good agreement, and the theoretical figure-of-merit ZT has been predicted as well.

Impact of Arsenic Related Defects on Electronic Performance of ZrO2/GaAs:Density Functional Theory Calculations

Arsenic can diffuse into high-κ dielectrics during OaAs-based metal oxide semiconductor transistor process, which causes the degradation of gate dielectrics. To explore the origins of the degradation, we employ nonlocal B3LYP hybrid functional to study arsenic related defects in ZrO2. Via band alignments between the OaAs and ZrO2, we are able to determine the defect formation energy in the GaAs relative to the ZrO2 band gap and assess how they will affect the device performance. Arsenic at the interstitial site serves as a source of positive fixed charge while at the oxygen or zirconium substitutional site changes its charge state within the band gap of GaAs. Moreover, it is found that arsenic related defects produce conduction band offset reduction and gap states, which will increase the gate leakage current.

Calculation Energy of Efficiency New Ginning Machine

Having studied the schedule of influence and change of static loading depending on angular an arrangement saw cylinders we have defined the general spent electric energy on the single-chamber two-cylinder gin, by performing of the calculation the energy consumption per one saw with respect to the angular arrangement of the saw cylinder. Also, provide energy audits gin, were performed at Uzbekistan Namangan region cotton gins in ten manufactures.

Current spreading in GaN-based light-emitting diodes

We have investigated the factors affecting the current spreading length（CSL） in GaN-based light-emitting diodes（LEDs） by deriving theoretical expressions and performing simulations with APSYS.For mesa-structure LEDs,the effects of both indium tin oxide（ITO） and n-GaN are taken into account for the first time,and a new Q factor is introduced to explain the effects of different current flow paths on the CSL.The calculations and simulations show that the CSL can be enhanced by increasing the thickness of the ITO layer and resistivity of the n-GaN layer,or by reducing the resistivity of the ITO layer and thickness of the n-GaN layer.The results provide theoretical support for calculating the CSL clearly and directly.For vertical-structure LEDs,the effects of resistivity and thickness of the CSL on the internal quantum efficiency（IQE） have been analyzed.The theoretical expression relating current density and the parameters（resistivity and thickness）of the CSL is obtained,and the results are then verified by simulation.The IQE under different current injection conditions is discussed.The effects of CSL resistivity play a key role at high current injection,and there is an optimal thickness for the largest IQE only at a low current injection.

Radical recombination in a hydrocarbon-fueled scramjet nozzle

To reveal the radical recombination process in the scramjet nozzle flow and study the effects of various factors of the recombination, weighted essentially non-oscillatory（WENO）schemes are applied to solve the decoupled two-dimensional Euler equations with chemical reactions to simulate the hydrocarbon-fueled scramjet nozzle flow. The accuracy of the numerical method is verified with the measurements obtained by a shock tunnel experiment. The overall model length is nearly 0.5 m, with inlet static temperatures ranging from 2000 K to 3000 K, inlet static pressures ranging from 75 k Pa to 175 k Pa, and inlet Mach numbers of 2.0 ± 0.4 are involved.The fraction Damkohler number is defined as functions of static temperature and pressure to analyze the radical recombination progresses. Preliminary results indicate that the energy releasing process depends on different chemical reaction processes and species group contributions. In hydrocarbon-fueled scramjet nozzle flow, reactions with H have the greatest contribution during the chemical equilibrium shift. The contrast and analysis of the simulation results show that the radical recombination processes influenced by inflow conditions and nozzle scales are consistent with Damkohler numbers and potential dissociation energy release. The increase of inlet static temperature improves both of them, thus making the chemical non-equilibrium effects on the nozzle performance more significant. While the increase of inlet static pressure improves the former one and reduces the latter, it exerts little influence on the chemical non-equilibrium effects.