Two measurement systems are developed for in-situ dielectric property measurement under high pressure in a wide-temperature range from 77 K to 1273 K. The high-temperature system ranging from room temperature up to 12...Two measurement systems are developed for in-situ dielectric property measurement under high pressure in a wide-temperature range from 77 K to 1273 K. The high-temperature system ranging from room temperature up to 1273 K is equipped with a hexahedron anvils press,while the low-temperature system ranging from liquid nitrogen temperature to normal condition is equipped using the piston cylinder setup with a specially designed sample chamber. Using these configurations, the dielectric property measurement of ferroelectric BaTiO_3 and multiferroic Tm_(0.5)Gd_(0.5)MnO_3 compounds are demonstrated, which proves the validity of the systems through the tuning of the polarization and phase transition boundary by high pressure. These two systems will be equally applicable to a wide variety of electronic and transport property measurements of insulators,semiconductors,as well as battery materials.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2009CB623301
文摘Two measurement systems are developed for in-situ dielectric property measurement under high pressure in a wide-temperature range from 77 K to 1273 K. The high-temperature system ranging from room temperature up to 1273 K is equipped with a hexahedron anvils press,while the low-temperature system ranging from liquid nitrogen temperature to normal condition is equipped using the piston cylinder setup with a specially designed sample chamber. Using these configurations, the dielectric property measurement of ferroelectric BaTiO_3 and multiferroic Tm_(0.5)Gd_(0.5)MnO_3 compounds are demonstrated, which proves the validity of the systems through the tuning of the polarization and phase transition boundary by high pressure. These two systems will be equally applicable to a wide variety of electronic and transport property measurements of insulators,semiconductors,as well as battery materials.
