Flexible perovskite light-emitting diodes for display applications and beyond

The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.

Large-area fabrication:The next target of perovskite light-emitting diodes

Perovskite materials show exciting potential for light-emitting diodes(LEDs)owing to their intrinsically high photoluminescence efficiency and color purity.The research focusing on perovskite light-emitting diodes(PeLEDs)has experienced an exponential growth in the past six years.The maximum external quantum efficiency of red,green,and blue PeLEDs has surpassed 20%,20%,and 10%,respectively.Nevertheless,the current PeLEDs are still in the laboratory stage,and the key for further development of PeLEDs is large-area fabrication.In this paper,we briefly discuss the similarities and differences between manufacturing high-quality and large-area PeLEDs and perovskite solar cells.Especially,the general technologies for fabricating large-area perovskite films are also introduced.The effect of charge transport layers and electrodes on large-area devices are discussed as well.Most importantly,we summarize the advances of large-area(active area≥30 mm^(2))PeLEDs reported since 2017,and describe the methods for optimizing large-area PeLEDs reported in the literature.Finally,the development perspective of PeLEDs is presented for the goal of highly efficient and large-area PeLED fabrication.It is of great significance for the application of PeLEDs in future display and lighting.

The strategies for preparing blue perovskite light-emitting diodes

Metal halide perovskites have attracted tremendous interest due to their excellent optical and electrical properties,and they find many promising applications in the optoelectronic fields of solar cells,light-emitting diodes,and photodetectors.Thanks to the contributions of international researchers,significant progress has been made for perovskite light-emitting diodes(Pero-LEDs).The external quantum efficiencies(EQEs)of Pero-LEDs with emission of green,red,and near-infrared have all exceeded 20%.However,the blue Pero-LEDs still lag due to the poor film quality and deficient device structure.Herein,we summarize the strategies for preparing blue-emitting perovskites and categorize them into two:compositional engineering and size controlling of the emitting units.The advantages and disadvantages of both strategies are discussed,and a perspective of preparing high-performance blue-emitting perovskite is proposed.The challenges and future directions of blue PeroLEDs fabrication are also discussed.

Surface Treatment of Inorganic CsPbI_(3) Nanocrystals with Guanidinium Iodide for Efficient Perovskite Light-Emitting Diodes with High Brightness

The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material.In particular,nanocrystals(NCs)of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications.However,the presence of surface defects on the NCs negatively impacts their performance in devices.Herein,we report a compatible facial post-treatment of CsPbI_(3) nanocrystals using guanidinium iodide(GuI).It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation.As a consequence,the film of treated CsPbI_(3) nanocrystals exhibited significantly enhanced luminescence and charge transport properties,leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8%with high brightness(peak luminance of 7039 cd m^(−2) and a peak current density of 10.8 cd A^(−1)).The EQE is over threefold higher than performance of untreated device(EQE:3.8%).The operational half-lifetime of the treated devices also was significantly improved with T50 of 20 min(at current density of 25 mA cm^(−2)),outperforming the untreated devices(T50~6 min).

Giant efficiency and color purity enhancement in multicolor inorganic perovskite light-emitting diodes via heating-assisted vacuum deposition

Inorganic perovskites(Cs Pb X3(X=I,Br,Cl))have broad prospection in the field of high-definition displaying due to its excellent optoelectronic characteristics.The vacuum deposition process possesses advantages and competitiveness in the industrialized production.However,the performance of light emitting diodes(LEDs)based on vacuum-deposited is incredibly low.Herein,we proposed a heating-assisted vacuum deposition(HAVD)method to construct inorganic perovskite LEDs(Pe LEDs)with enhanced performance.The roughness and crystallinity of perovskite film were improved by regulating the heating treatment of substrates.And the perovskite film exhibited largely rise in luminescence,with decreasing defect density.Consequently,with the optimized temperature,the green Pe LEDs exhibited 100-fold improvement of external quantum efficiency(EQE)with the luminance of up to 11941 cd/m2,and the full width at half-maximum(FWHM)of the electroluminescence(EL)spectra was decreased from 25 to 17 nm.At the same time,the red and blue Pe LEDs also exhibited obvious enhancement in EQE and luminance by HAVD method,and both the FWHM of EL spectra dropped below 20 nm,exhibiting excellent high color purity.HAVD strategy has a huge potential to be a new commonly used method for low-cost fabrication of displays and lighting.

Perovskite Light-emitting Diodes with Record High EQE of 20.7% and ECE of 18.6%

Light-emitting diodes(LEDs)have wide applications in the areaof lighting,medical devices,display screens,etc.Owing to theexcellent optoelectronic properties and the facile solution proces-sing methods,organometal halide perovskites are extensively stu-died and proved to be promising light.emitting materials to fabri-cate LED devices[1-2].Generally,nonradiative recombination andlight trapping are two main factors to impede the efficiency en-hancement of LEDs,which are more serious in perovskite mate-rials for the high refractive index.

PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Rational molecular passivation for high-performance perovskite light-emitting diodes

Solution-processed metal halide perovskites (MHPs) have received significant interest for cost-effective, high-performance optoelectronic devices. In addition to the great successes in photovoltaics, their excellent luminescence and charge transport properties also make them promising for light emitting diodes (LEDs). To achieve high-efficiency perovskite LEDs (PeLEDs), extensive efforts have been carried out to enhance radiative recombination rates by confining the electrons and holes. In addition to enhancing radiative recombination rates, it is equally important to decrease the non-radiative recombination for improving the device performance. Passivation of the defects could be an efficient way for reducing the non-radiative recombination.

Rapid crystallization-driven high-efficiency phase-pure deep-blue Ruddlesden–Popper perovskite light-emitting diodes

Perovskite light-emitting diodes(PeLEDs)are considered as promising candidates for nextgeneration solution-processed full-color displays.However,the external quantum efficiencies(EQEs)and operational stabilities of deep-blue(<460 nm)PeLEDs still lag far behind their red and green counterparts.Herein,a rapid crystallization method based on hot-antisolvent bathing is proposed for realization of deep-blue PeLEDs.By promoting immediate removal of the precursor solvent from the wet perovskite films,development of the quasi-two-dimensional(2D)Ruddlesden–Popper perovskite(2D-RPP)crystals with n values>3 is hampered completely,so that phase-pure 2D-RPP films with bandgaps suitable for deep-blue PeLEDs can be obtained successfully.The uniquely developed rapid crystallization method also enables formation of randomly oriented 2D-RPP crystals,thereby improving the transfer and transport kinetics of the charge carriers.Thus,high-performance deep-blue PeLEDs emitting at 437 nm with a peak EQE of 0.63%are successfully demonstrated.The color coordinates are confirmed to be(0.165,0.044),which match well with the Rec.2020 standard blue gamut and have excellent spectral stability.

Highly spectra-stable pure blue perovskite light-emitting diodes based on copper and potassium co-doped quantum dots

Halide perovskite light emitting diodes(LEDs)have gained great progress in recent years.However,mixed-halide perovskites for blue LEDs usually suffer from electroluminescence(EL)spectra shift at a high applied voltage or current density,limiting their efficiency.In this work,we report a strategy of using single-layer perovskite quantum dots(QDs)film to tackle the electroluminescence spectra shift in pure-blue perovskite LEDs and improve the LED efficiency by co-doping copper and potassium in the mixed-halide perovskite QDs.As a result,we obtained pure-blue halide perovskite QD-LEDs with stable EL spectra centred at 469 nm even at a current density of 1,617 mA·cm^(−2).The optimal device presents a maximum external quantum efficiency(EQE)of 2.0%.The average maximum EQE and luminance of the LEDs are 1.49%and 393 cd·m^(−2),increasing 62%and 66%compared with the control LEDs.Our study provides an effective strategy for achieving spectra-stable and highly efficient pure-blue perovskite LEDs.

Growth,leaf anatomy,and photosynthesis of cotton(Gossypium hirsutum L.)seedlings in response to four light-emitting diodes and high pressure sodium lamp

Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.

Improving the films quality of Sn-based perovskites through additive treatment for high-performance light-emitting diodes

Hybrid lead halide perovskites have received great attention in the field of light-emitting diodes(LEDs)owing to their excellent optoelectronic properties,low cost,and high color purity.To data,the external quantum efficiency(EQE)of lead halide perovskites LEDs has been reported to exceed 20%[1].Even so,the toxicity of conventional lead has cast a gloomy shadow over their further application.

Recent Advances in Patterning Strategies for Full‑Color Perovskite Light‑Emitting Diodes

Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability,pure color emission with remarkably narrow bandwidths,high quantum yield,and solution processability.Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes(PeLEDs)to their theoretical limits,their current fabrication using the spincoating process poses limitations for fabrication of full-color displays.To integrate PeLEDs into full-color display panels,it is crucial to pattern red–green–blue(RGB)perovskite pixels,while mitigating issues such as cross-contamination and reductions in luminous efficiency.Herein,we present state-of-the-art patterning technologies for the development of full-color PeLEDs.First,we highlight recent advances in the development of efficient PeLEDs.Second,we discuss various patterning techniques of MPHs(i.e.,photolithography,inkjet printing,electron beam lithography and laserassisted lithography,electrohydrodynamic jet printing,thermal evaporation,and transfer printing)for fabrication of RGB pixelated displays.These patterning techniques can be classified into two distinct approaches:in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals.This review highlights advancements and limitations in patterning techniques for PeLEDs,paving the way for integrating PeLEDs into full-color panels.

Sky-blue perovskite light-emitting diodes based on quasi-two-dimensional layered perovskites

A mixed organic（4-phenylbutylamine, 4-PBA） and inorganic（cesium, Cs） cations are used to deposit quasi-two-dimensional layered perovskites. This layered perovskites exhibit good film coverage as twodimensional perovskites and high emission performance close to three-dimensional organic–inorganic hybrid perovskites. Light-emitting diodes（LEDs） are fabricated by using solution process based on the quasi-two-dimensional layered perovskites. The perovskite LEDs exhibit a sky-blue emission with electroluminescence peak at 491 nm and a low turn on voltage at 2.9 V. The maximum external quantum efficiency reaches 0.015% at brightness of 186 cd/m^2.

CsPbBr_(x)I_(3-x)thin films with multiple ammonium ligands for low turn-on pure-red perovskite light-emitting diodes

All-inorganic α-CsPbBr_(x)I_(3-x)perovskites featuring nano-sized crystallites show great potential for pure-red light-emitting diode(LED)applications.Currently,the CsPbBr_(x)I_(3-x)LEDs based on nano-sized α-CsPbBr_(x)I_(3-x)crystallites have been fabricated mainly via the classical colloidal route including a tedious procedure of nanocrystal synthesis,purification,ligand or anion exchange,film casting,etc.With the usually adopted conventional LED device structure,only high turn-on voltages(>2.7)have been achieved for CsPbBrxl3-x LEDs.Moreover,this mix-halide system may suffer from severe spectra-shift under bias.In this report,CsPbBr_(x)I_(3-x)thin films featuring nano-sized crystallites are prepared by incorporating multiple ammonium ligands in a one-step spin-coating route.The multiple ammonium ligands constrain the growth of CsPbBr_(x)I_(3-x)nanograins.Such CsPbBr_(x)I_(3-x)thin films benefit from quantum confinement.The corresponding CsPbBr_(x)I_(3-x)LEDs,adopting a conventional LED structure of indium-doped tin oxide(ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/CsPbBr_(x)I_(3-x)/[6,6]-phenyl C61 butyric acid methyl ester(PCBM)/bathocuproine(BCP)/AI,emit pure-red color at Commission Internationale de I'eclairage(CIE)coordinates of(0.709,0.290),(0.711,0.289),etc.,which represent the highest color-purity for reported pure-red perovskite LEDs and meet the Rec.2020 requirement at CIE(0.708,0.292)very well.The CsPbBr_(x)I_(3-x)LED shows a low turn-on voltage of 1.6 V,maximum external quantum efficiency of 8.94%,high luminance of 2,859 cd·m^(-2),and good color stability under bias.

Self‑Generated Buried Submicrocavities for High‑Performance Near‑Infrared Perovskite Light‑Emitting Diode

ABSTRACT Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency(LOCE)for planar perovskite light-emitting diodes(PeLEDs).In this work,we employ phenethylammonium iodide(PEAI)to trigger the Ostwald ripening for the downward recrystallization of perovskite,resulting in spontaneous formation of buried submicrocavities as light output coupler.The simulation suggests the buried submicrocavities can improve the LOCE from 26.8 to 36.2%for near-infrared light.Therefore,PeLED yields peak external quantum efficiency(EQE)increasing from 17.3%at current density of 114 mA cm^(−2)to 25.5%at current density of 109 mA cm^(−2)and a radiance increasing from 109 to 487 W sr^(−1)m^(−2)with low rolling-off.The turn-on voltage decreased from 1.25 to 1.15 V at 0.1 W sr^(−1)m^(−2).Besides,downward recrystallization process slightly reduces the trap density from 8.90×10^(15)to 7.27×10^(15)cm^(−3).This work provides a self-assembly method to integrate buried output coupler for boosting the performance of PeLEDs.

Light-emitting diodes based on all-inorganic copper halide perovskite with self-trapped excitons

Light-emitting diodes based on lead halide perovskite have attracted great attention due to their outstanding performance.However,their application is plagued by the toxicity of Pb and the poor stability.Herein novel copper-based all inorganic perovskite CsCu2I3 with much enhanced stability has been reported with a potential photoluminescence quantum yield(PLQY)over 20%and self-trapped excitons(STE).By taking advantage of its extraordinary thermal stability,we successfully fabricate high-quality CsCu2I3 film through direct vacuum-based deposition(VBD)of CsCu2I3 powder.The resulting film shows almost the same PLQY with the synthesized powder,as well as excellent uniformity and stability.The perovskite light-emitting diodes(Pe-LED)based on the evaporated CsCu2I3 emitting layer achieve a luminescence of 10 cd/m2 and an external quantum efficiency(EQE)of 0.02%.To the best of our knowledge,this is the first CsCu2I3 Pe-LED fabricated by VBD with STE property,which offers a new avenue for lead-free Pe-LED.

Focus on performance of perovskite light-emitting diodes

Perovskite-based optoelectronic devices,espe-cially perovskite light-emitting diodes(PeLEDs)and perovskite solar cells,have recently attracted considerable attention.The National Renewable Energy Laboratory(NREL)chart inspires us to develop a counterpart for PeLEDs.In this study,we collect the record performance of PeLEDs including several new entries to address their latest external quantum efficiency(EQE),highest lumi-nance,and stability status.We hope that these performance tables and future updated versions will show the frontiers of PeLEDs,assist researchers in capturing the overview of this field,identify the remaining challenges,and predict the promising research directions.

Composition engineering to obtain efficient hybrid perovskite light-emitting diodes

Metal halide perovskites have received considerable attention in the field of electroluminescence,and the external quantum efficiency of perovsk'c lightemitting diodes has exceeded 20%.CH3NH3PbBr3 has been intensely investigated as an emitting layer in perovskite light-emitting diodes.However,perovskite films comprising CH3NH3PbBr3 often exhibit low surface coverage and poor crystallinity,leading to high current leakage,severe nonradiative recombination,and limited device performance.Herein,we demonstrate a rationale for composition engineering to obtain high-quality perovskite films.We first reduce pinholes by adding excess CH3NH3B1 to the actual CH3NH3PbBr3 films,and we then add CsBr to improve the crystalline quality and to passivate nonradiative defects.As a result,the(CH3NH3)1-xCSxPbBx based perovskite light-emitting diodes exhibit significantly improved external quantum and power efficiencies of 6.97%and 25.181m/W,respectively,representing an improvement in performance dozens of times greater than that of pristine CH3NH3PbBr3-based perovskite light-emitting diodes.Our study demonstrates that composition engineering is an effective strategy for enhancing the device performance of perovskite light-emitting diodes.

Organic additive engineering toward efficient perovskite light-emitting diodes

Perovskite materials with excellent optical and electrical properties are promising for light-emitting diodes.In the field of perovskite light-emitting diodes(PeLEDs),organic materials additive engineering has been proved to be an effective scheme for enhancing efficiency and stability in PeLEDs.Most impressively,the reported external quantum efficiency of PeLEDs based on perovskite-organic composite has reached over 20%.Herein,we will review the important progress of the organic materials'additive-modified PeLEDs and discuss the remaining problems and challenges and the key research direction in the near future.

Stable and high performance all-inorganic perovskite light-emitting diodes with anti-solvent treatment

Optoelectronic applications based on the perovskites always face challenges due to the inherent chemical composition volatility of perovskite precursors. The efficiency of perovskite-based light-emitting diodes(Pe-LEDs) can be enhanced by improving the perovskite film via solvent engineering. A dual solvent post-treatment strategy was applied to the perovskite film, which provides a synchronous effect of passivating surface imperfections and reduces exciton quenching, as evidenced by improved surface morphology and photoluminance. Thus, the optimized Pe-LEDs reach 17,866 cd · m-2 maximum brightness, 45.8 cd · A-1 current efficiency, 8.3% external quantum efficiency, and relatively low turn-on voltage of2.0 V. Herein, we present a simple technique for the fabrication of stable and efficient Pe-LEDs.