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Current Controlled Relaxation Oscillations in Ge_2Sb_2Te_5-Based Phase Change Memory Devices
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作者 卢瑶瑶 蔡道林 +4 位作者 陈一峰 王月青 魏宏阳 霍如如 宋志棠 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第3期135-138,共4页
The relaxation oscillation of the phase change memory (PCM) devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately... The relaxation oscillation of the phase change memory (PCM) devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell. 展开更多
关键词 PCM on of in Current Controlled Relaxation Oscillations in Ge2Sb2Te5-Based phase change Memory devices is that been Ge SB
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