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Thermal-dynamical properties and pressure dependence of phonon spectrum of ordered Si_(50)Ge_(50) alloy based on ab initio methods
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作者 Lü MengYa1,2, CHEN ZhouWen1 & LIU RiPing1 1 State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China 2 College of Information Science and Engineering, Yanshan University, Qinhuangdao 066004, China 《Science China(Technological Sciences)》 SCIE EI CAS 2008年第3期244-248,共5页
The phonon spectrum of ordered zincblende Si50Ge50 alloy is calculated by ab initio method. The energy band structure at zero pressure and the pressure dependence of phonon dispersion curves are shown up to 20 GPa. Th... The phonon spectrum of ordered zincblende Si50Ge50 alloy is calculated by ab initio method. The energy band structure at zero pressure and the pressure dependence of phonon dispersion curves are shown up to 20 GPa. The calculation finds a pressure-induced softening of the transverse acoustic phonon mode and the mode frequency reaching zero at about 14 GPa, which indicate breaking of the symmetry and formation of a new phase under high pressure. 展开更多
关键词 phonon spectrum si50ge50 alloy thermal-dynamical properties
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