We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate ...We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate glass electrolyte （PSG） gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double- layer （EDL） capacitance （〉 1 #Flora2） of the PSG, the low voltage （2.0 V） junctionless IZO TFTs and the dual eoplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.展开更多
A dynamic phosphor-silicate glass （PSG） gettering method is proposed in which the processes of the gettering of Ni by PSC and the crystallizing of α-Si into poly-Si by Ni take place simultaneously. The effects of P...A dynamic phosphor-silicate glass （PSG） gettering method is proposed in which the processes of the gettering of Ni by PSC and the crystallizing of α-Si into poly-Si by Ni take place simultaneously. The effects of PSC gettering process on the performances of solution-based metal induced crystallized （S-MIC） poly-Si materials and their thin film transistors （TFTs） are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSC during crystallization at the same time. The boundary between two neighbouring grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSC gettering, the TFTs made with PSC gettering has a reduced gate induced leakage current.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 51302276 and 51301043the Ningbo Natural Science Foundation under Grant No 2013A610129
文摘We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate glass electrolyte （PSG） gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double- layer （EDL） capacitance （〉 1 #Flora2） of the PSG, the low voltage （2.0 V） junctionless IZO TFTs and the dual eoplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.
基金Project supported by the National High Technology Research and Developments Program of China (Grant No 004AA33570)Key Project of National Natural Science Foundation of China (NSFC) (Grant No 60437030)Tianjin Natural Science Foundation(Grant No 05YFJMJC01400)
文摘A dynamic phosphor-silicate glass （PSG） gettering method is proposed in which the processes of the gettering of Ni by PSC and the crystallizing of α-Si into poly-Si by Ni take place simultaneously. The effects of PSC gettering process on the performances of solution-based metal induced crystallized （S-MIC） poly-Si materials and their thin film transistors （TFTs） are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSC during crystallization at the same time. The boundary between two neighbouring grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSC gettering, the TFTs made with PSC gettering has a reduced gate induced leakage current.
