The effect of phosphorus passivation on 4H-SiC（0001） silicon （Si） dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phospho...The effect of phosphorus passivation on 4H-SiC（0001） silicon （Si） dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phosphorus atoms at high-symmetry coordinated sites. To determine the most stable structure during the passivation process of phosphorus, a surface phase diagram of phosphorus adsorption on SiC （0001） surface is constructed over a coverage range of 1/9-1 monolayer （ML）. The calculated results indicate that the 1/3 ML configuration is most energetically favorable in a reasonable environment. At this coverage, the total electron density of states demonstrates that phosphorus may effectively reduce the interface state density near the conduction band by removing 4H-SiC （0001） Si dangling bonds. It provides an atomic level insight into how phosphorus is able to reduce the near interface traps.展开更多
A black phosphorus (BP) saturable absorber (SA) solution with different concentrations (1.0 and 0.5 mg/ml) is fabricated with the liquid-phase exfoliation method. By using the BP-SA, a compact diode-pumped passively Q...A black phosphorus (BP) saturable absorber (SA) solution with different concentrations (1.0 and 0.5 mg/ml) is fabricated with the liquid-phase exfoliation method. By using the BP-SA, a compact diode-pumped passively Q-switched Nd:YVO4 laser is demonstrated. One reflecting Bragg gratings is used as the output coupler for mode selection. By inserting those BP-SA solutions in the laser cavity, the maximum single longitude mode, Q-switched output powers of 126mW at 692.5 kHz and 149mW at 630.3 kHz are achieved at the pump power of 8.0 W, corresponding to the pulse durations of 144 ns and 196 ns, respectively. Moreover, longitudinal-mode characteristics of Q-switched output laser in different optical cavity lengths based on two-kind BP-SA solution concentrations are investigated. Our results show that BP-SA could also be developed as an effective SA for the Q-switched, single longitudinal mode pulse laser.展开更多
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2014AA052401)the National Natural Science Foundation of China(Grant No.61474013)the National Grid Science&Technology Project,China(Grant No.5455DW150006)
文摘The effect of phosphorus passivation on 4H-SiC（0001） silicon （Si） dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phosphorus atoms at high-symmetry coordinated sites. To determine the most stable structure during the passivation process of phosphorus, a surface phase diagram of phosphorus adsorption on SiC （0001） surface is constructed over a coverage range of 1/9-1 monolayer （ML）. The calculated results indicate that the 1/3 ML configuration is most energetically favorable in a reasonable environment. At this coverage, the total electron density of states demonstrates that phosphorus may effectively reduce the interface state density near the conduction band by removing 4H-SiC （0001） Si dangling bonds. It provides an atomic level insight into how phosphorus is able to reduce the near interface traps.
基金Supported by West Young Scholar Foundation of the Chinese Academy of Sciences under Grant No XAB2015B27
文摘A black phosphorus (BP) saturable absorber (SA) solution with different concentrations (1.0 and 0.5 mg/ml) is fabricated with the liquid-phase exfoliation method. By using the BP-SA, a compact diode-pumped passively Q-switched Nd:YVO4 laser is demonstrated. One reflecting Bragg gratings is used as the output coupler for mode selection. By inserting those BP-SA solutions in the laser cavity, the maximum single longitude mode, Q-switched output powers of 126mW at 692.5 kHz and 149mW at 630.3 kHz are achieved at the pump power of 8.0 W, corresponding to the pulse durations of 144 ns and 196 ns, respectively. Moreover, longitudinal-mode characteristics of Q-switched output laser in different optical cavity lengths based on two-kind BP-SA solution concentrations are investigated. Our results show that BP-SA could also be developed as an effective SA for the Q-switched, single longitudinal mode pulse laser.
