Shwachman-Diamond综合征7例患儿临床特点和基因变异分析

目的 探讨Shwachman-Diamond综合征(SDS)患儿的临床表型和基因变异特点。方法 选取2018年1月至2023年9月于儿内分泌遗传科长期随访的7例SDS患儿,收集其临床资料,采集外周血样进行外显子组测序(ES)分析,并通过Sanger测序对变异位点进行家系验证。结果 7例SDS患儿中男3例、女4例,初诊中位年龄为3.0(0.9~4.0)岁,6例为SBDS基因缺陷,1例为EFL1基因缺陷。6例SBDS缺陷的患儿中,5例携带复合杂合突变,2例为c.258+2T>C/c. 183_184 delinsCT,1例为c. 258+2 T>C/c. 40 A>G,1例为c. 258+2 T>C/c. 184 A>T,1例为c. 258+2 T>C/第3外显子杂合缺失;余1例携带c.258+2T>C纯合突变。SBDS缺陷患儿以矮小(6/6,100%)伴慢性腹泻(3/6,50%)和反复呼吸道感染(1/6,16.7%)就诊,经检查发现6例(100%)均存在中性粒细胞减少和肝酶升高,4例有骨骼发育异常表现,3例有胰腺外分泌功能不全表现。1例EFL 1缺陷患儿携带复合杂合突变(c. 2260 C>T/c. 316 G>A),表现为矮小和骨骼发育异常,但无胰腺和血液系统受累。结论 SBDS缺陷患儿具有异质性的临床表型,以上发现丰富了中国SDS的表型谱和变异谱,并首次在中国人群中报道了1例EFL1变异患儿的临床特征。对矮小合并中性粒细胞减少、胰腺外分泌功能障碍、骨骼畸形等症状的患儿,应完善基因检测以免漏诊SDS。

Electronic structures of phosphorus-doped diamond films and impacts of their vacancies

In order to better understand the bonding mechanisms of the phosphorus-doped diamond films and the influences of the phosphorus-doped concentration on the diamond lattice integrity and conductivity,we calculate the electronic structures of the phosphorus-doped diamond with different phosphorus concentrations and the density of states in the phosphorus--doped diamond films with a vacant lattice site by the first principle method.The calculation results show the phosphorus atom only affects the bonds of a few atoms in its vicinity,and the conductivity increases as the doped concentration increases.Also in the diamond lattice with a total number of 64 atoms and introducing a vacancy into the non-nearest neighbor lattice site of a phosphorus atom,we have found that both the injuries of the phosphorus-doped diamond films and the N-type electron conductivity of diamond films could be improved.

Revealing the atomic mechanism of diamond–iron interfacial reaction

Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide attention.However,researchers found emergent reactions at the interfaces between diamond and ferrous materials,which significantly affects the performance of diamond-based devices.Herein,combing experiments and theoretical calculations,taking diamond–iron(Fe)interface as a prototype,the counter-diffusion mechanism of Fe/carbon atoms has been established.Surprisingly,it is identified that Fe and diamond first form a coherent interface,and then Fe atoms diffuse into diamond and prefer the carbon vacancies sites.Meanwhile,the relaxed carbon atoms diffuse into the Fe lattice,forming Fe_(3)C.Moreover,graphite is observed at the Fe_(3)C surface when Fe_(3)C is over-saturated by carbon atoms.The present findings are expected to offer new insights into the atomic mechanism for diamondferrous material's interfacial reactions,benefiting diamond-based device applications.

Shwachman-Diamond综合征1例报告及文献复习

目的:探讨Shwachman-Diamond综合征(SDS)的临床特征、诊断及治疗,以提高临床医生对该疾病的认识。方法:回顾性分析1例以中性粒细胞减少和转氨酶水平升高为主要临床表现,经基因检测明确诊断为SDS患儿的临床资料,并结合相关资料分析SDS的临床表现、基因特征、诊断和治疗方法。结果:患儿,男性,27月龄。以中性粒细胞减少和转氨酶水平升高为首发临床表现,患儿既往3月龄时出现腹泻,口服胰酶散治疗后腹泻好转,近半年反复呼吸道感染。入院查体显示牙釉质发育不良,影像学表现为四肢长骨骨质密度异常,基因测序结果提示患儿Shwachman-Bodian-Diamond综合征(SBDS)基因c.258+2T>C纯合变异。住院期间给予保肝和增加粒细胞等对症支持治疗,患儿病情好转后出院,随访1年,患儿病情稳定。结论:SDS患儿典型表现为腹泻,肝功能、血象和骨骼异常,尤其是中性粒细胞减少,也可能存在生长发育落后,心脏、肝脏、中枢神经系统、骨骼和免疫系统受累,对疑似患儿及时进行基因检测,有助于SDS患儿早期诊断及治疗。

Diamond软件在单形教学中的应用

介绍了用Diamond软件构造47种晶体单形模型的方法及其在教学中的应用。

核糖体蛋白L5在Diamond-Blackfan贫血伴发唇腭裂中作用机制的研究进展

核糖体蛋白L5(RPL5)是核糖体大亚基的一部分,携带RPL5基因突变的Diamond-Blackfan贫血患者会伴发多种畸形,包括唇腭裂等颅面畸形以及心脏缺陷等躯体畸形。但是在RPL5突变导致核糖体生物发生缺陷的情况下,唇腭裂发生的机制仍然知之甚少。本文综述了近年对于RPL5的研究,并讨论了突变的RPL5核糖体蛋白与唇腭裂发生的可能机制。

Energy beam-based direct and assisted polishing techniques for diamond:A review

Diamond is a highly valuable material with diverse industrial applications,particularly in the fields of semiconductor,optics,and high-power electronics.However,its high hardness and chemical stability make it difficult to realize high-efficiency and ultra-low damage machining of diamond.To address these challenges,several polishing methods have been developed for both single crystal diamond(SCD)and polycrystalline diamond(PCD),including mechanical,chemical,laser,and ion beam processing methods.In this review,the characteristics and application scope of various polishing technologies for SCD and PCD are highlighted.Specifically,various energy beam-based direct and assisted polishing technologies,such as laser polishing,ion beam polishing,plasma-assisted polishing,and laser-assisted polishing,are summarized.The current research progress,material removal mechanism,and infuencing factors of each polishing technology are analyzed.Although some of these methods can achieve high material removal rates or reduce surface roughness,no single method can meet all the requirements.Finally,the future development prospects and application directions of different polishing technologies are presented.

Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si(001)substrates via laser-patterned templates

As an ultra-wide bandgap semiconductor,diamond garners significant interest due to its exceptional physical properties^([1–3]).These superior characteristics make diamonds highly promising for applications in power electronics^([4]),deep-ultraviolet detectors^([5]),high-energy particle detectors^([6]),and quantum devices based on color centers^([7]).

Synthesis and nitrogen content regulation of diamond in a high-pressure hydrogen-rich environment

The regulating nitrogen content of diamond in a hydrogen-rich high-temperature and high-pressure(HPHT) growth environment was systematically investigated in this work by developing three growth systems,namely, "FeNi+Ti", "FeNi+G_(3)N_(6)H_(6)",and "FeNi+Ti+C_(3)N_(6)H_(6)".Optical microscopy,infrared spectroscopy,and photoluminescence(PL)spectroscopy measurements were conducted to analyze the spectroscopic characteristics of diamonds grown in these three systems.From our analysis,it was demonstrated that the presence of hydrogen in the sp^(3) hybrid C-H does not directly affect the color of the diamond and facilitates the increase of the nitrogen-vacancy(NV) center concentration in a highnitrogen-content diamond.In addition,titanium plays an important role in nitrogen removal,while its impact on hydrogen doping within the diamond lattice is insignificant.Most importantly,by regulating the ratio of nitrogen impurities that coexist in the nitrogen and hydrogen HPHT environment,the production of hydrogenous Ⅱa-type diamond,hydrogenous Ib-type diamond,and hydrogenous high-nitrogen-type diamonds was achieved with a nitrogen content of less than 1 ppm to 1600 ppm.

Observation of flat-band localized state in a one-dimensional diamond momentum lattice of ultracold atoms

We investigated the one-dimensional diamond ladder in the momentum lattice platform. By inducing multiple twoand four-photon Bragg scatterings among specific momentum states, we achieved a flat band system based on the diamond model, precisely controlling the coupling strength and phase between individual lattice sites. Utilizing two lattice sites couplings, we generated a compact localized state associated with the flat band, which remained localized throughout the entire time evolution. We successfully realized the continuous shift of flat bands by adjusting the corresponding nearest neighbor hopping strength, enabling us to observe the complete localization process. This opens avenues for further exploration of more complex properties within flat-band systems, including investigating the robustness of flat-band localized states in disordered flat-band systems and exploring many-body localization in interacting flat-band systems.

Diamond-based electron emission:Structure,properties and mechanisms

Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a PN junction.The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices.This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics.The electron emission is induced by different physical mechanisms.Recent advancements in electron-emitting devices based on diamond are also summarized.Finally,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.

Rational design of diamond through microstructure engineering:From synthesis to applications

Diamond possesses excellent thermal conductivity and tunable bandgap.Currently,the high-pressure,high-temperature,and chemical vapor deposition methods are the most promising strategies for the commercial-scale production of synthetic diamond.Although diamond has been extensively employed in jewelry and cutting/grinding tasks,the realization of its high-end applications through microstructure engineering has long been sought.Herein,we discuss the microstructures encountered in diamond and further concentrate on cutting-edge investigations utilizing electron microscopy techniques to illuminate the transition mechanism between graphite and diamond during the synthesis and device constructions.The impacts of distinct microstructures on the electrical applications of diamond,especially the photoelectrical,electrical,and thermal properties,are elaborated.The recently reported elastic and plastic deformations revealed through in situ microscopy techniques are also summarized.Finally,the limitations,perspectives,and corresponding solutions are proposed.

Precipitates Generation Mechanism and Surface Quality Improvement for Aluminum Alloy 6061 in Diamond Cutting

To improve the surface quality for aluminum alloy 6061(Al6061) in ultra-precision machining, we investigated the factors affecting the surface finish in single point diamond turning(SPDT)by studying influence of the precipitates generation of Al6061 on surface integrity and surface roughness.Based on the Johnson-Mehl-Avrami solid phase transformation kinetics equation, theoretical and experimental studies were conducted to build the relationship between the aging condition and the type, size and number of the precipitates for Al6061. Diamond cutting experiments were conducted to machine Al6061 samples under different aging conditions. The experimental results show that, the protruding on the chip surface is mainly Mg_(2)Si and the scratches on the machined surface mostly come from the iron-containing phase(α-, β-AlFeSi).Moreover, the generated Mg_(2)Si and α-, β-AlFeSi affect the surface integrity and the diamond turned surface roughness. Especially, the achieved surface roughness in SPDT is consistent with the variation of the number of AlFeSi and Mg_(2)Si with the medium size(more than 1 μm and less than 2 μm) in Al6061.

Edge effect during microwave plasma chemical vapor deposition diamond-film:Multiphysics simulation and experimental verification

This study focused on the investigation of the edge effect of diamond films deposited by microwave plasma chemical vapor de-position.Substrate bulge height△h is a factor that affects the edge effect,and it was used to simulate plasma and guide the diamond-film deposition experiments.Finite-element software COMSOL Multiphysics was used to construct a multiphysics(electromagnetic,plasma,and fluid heat transfer fields)coupling model based on electron collision reaction.Raman spectroscopy and scanning electron microscopy were performed to characterize the experimental growth and validate the model.The simulation results reflected the experimental trends observed.Plasma discharge at the edge of the substrate accelerated due to the increase in△h(△h=0-3 mm),and the values of electron density(n_(c)),molar concentration of H(C_(H)),and molar concentration of CH_(3)(C_(CH_(3)))doubled at the edge(for the special concave sample with△h=−1 mm,the active chemical groups exhibited a decreased molar concentration at the edge of the substrate).At=0-3 mm,a high diamond growth rate and a large diamond grain size were observed at the edge of the substrate,and their values increased with.The uniformity of film thickness decreased with.The Raman spectra of all samples revealed the first-order characteristic peak of dia-mond near 1332 cm^(−1).When△h=−1 mm,tensile stress occurred in all regions of the film.When△h=1-3 mm,all areas in the film ex-hibited compressive stress.

Effect of surface modification on the radiation stability of diamond ohmic contacts

The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.

Micron-sized fiber diamond probe for quantum precision measurement of microwave magnetic field

We present a quantitative measurement of the horizontal component of the microwave magnetic field of a coplanar waveguide using a quantum diamond probe in fiber format.The measurement results are compared in detail with simulation,showing a good consistence.Further simulation shows fiber diamond probe brings negligible disturbance to the field under measurement compared to bulk diamond.This method will find important applications ranging from electromagnetic compatibility test and failure analysis of high frequency and high complexity integrated circuits.

Effects of diamond particle size on microstructure and properties of diamond/Al-12Si composites prepared by vacuum-assisted pressure infiltration

Diamond/aluminium composites have attracted attention in the field of thermal management of electronic packaging for their excellent properties.In order to solve the interfacial problem between diamond and aluminium,a novel process combining pressure infiltration with vacuum-assisted technology was proposed to prepare diamond/aluminum composites.The effect of diamond particle size on the microstructure and properties of the diamond/Al-12Si composites was investigated.The results show that the diamond/Al-12Si composites exhibit high relative density and a uniform microstructure.Both thermal conductivity and coefficient of thermal expansion increase with increasing particle size,while the bending strength exhibits the opposite trend.When the average diamond particle size increases from 45μm to 425μm,the thermal conductivity of the composites increases from 455 W·m^(-1)·K^(-1)to 713 W·m^(-1)·K^(-1)and the coefficient of thermal expansion increases from 4.97×10^(-6)K^(-1)to 6.72×10^(-6)K^(-1),while the bending strength decreases from 353 MPa to 246 MPa.This research demonstrates that high-quality composites can be prepared by the vacuum-assisted pressure infiltration process and the thermal conductivity of the composites can be effectively improved by increasing the diamond particle size.

Effects of Diamond on the Mechanical Properties and Thermal Conductivity of Si_(3)N_(4)Composites Fabricated Using Spark Plasma Sintering

Micrometer-sized diamonds were incorporated into silicon nitride(Si_(3)N_(4))matrix to manufacture high-performance Si_(3)N_(4)-based composites using spark plasma sintering at 1500℃under 50 MPa.The effects of the diamond content on the phase composition,microstructure,mechanical properties and thermal conductivity of the composites were investigated.The results showed that the addition of diamond could effectively improve the hardness of the material.The thermal conductivity of Si_(3)N_(4)increased to 52.97 W/m·k at the maximum with the addition of 15 wt%diamond,which was 27.5%higher than that of the monolithic Si_(3)N_(4).At this point,the fracture toughness was 7.54 MPa·m^(1/2).Due to the addition of diamond,the composite material generated a new substance,MgSiN2,which effectively combined Si_(3)N_(4)with diamond.MgSiN2 might improve the hardness and thermal conductivity of the materials.

Investigation on photonic crystal nanobeam cavity based on mixed diamond–circular holes

A photonic crystal nanobeam cavity(M-PCNC)with a structure incorporating a mixture of diamond-shaped and circular air holes is pro-posed.The performance of the cavity is simulated and studied theoretically.Using thefinite-difference time-domain method,the parameters of the M-PCNC,including cavity thickness and width,lattice constant,and radii and numbers of holes,are optimized,with the quality factor Q and mode volume Vm as performance indicators.Mutual modulation of the lattice constant and hole radius enable the proposed M-PCNC to realize outstanding performance.The optimized cavity possesses a high quality factor Q 1.45105 and an ultra-small mode=×volume Vm 0.01(λ/n)[Zeng et al.,Opt Lett 2023:48;3981–3984]in the telecommunications wavelength range.Light can be progres-=sively squeezed in both the propagation direction and the perpendicular in-plane direction by a series of interlocked anti-slots and slots in the diamond-shaped hole structure.Thereby,the energy can be confined within a small mode volume to achieve an ultra-high Q/Vm ratio.

沉积温度对不同Co含量WC-Co/SiC/Diamond界面结合性能的影响

本文构建了Co质量分数分别为6%、8%、10%和12%的WC-Co/SiC/Diamond金刚石涂层硬质合金界面模型,利用分子动力学方法模拟了不同沉积温度对其界面结合强度的影响,从黏附功及键长分布两个方面进行具体分析。黏附功分析结果表明,与其他三种Co含量界面模型相比,WC-6%Co/SiC/Diamond界面模型在七个沉积温度下所包含的两种界面的黏附功值均为最高值,并且在不同沉积温度下,WC-6%Co/SiC/Diamond界面模型所包含的WC-6%Co/SiC界面、SiC/Diamond界面的黏附功分别在1123、1173 K时最大,为2.468、5.394 J/m^(2)。键长分布概率分析结果表明,与其他三种Co含量界面模型相比,在任一沉积温度下,WC-6%Co/SiC/Diamond界面模型各界面处键长分布范围的最大值较小,且在1123 K时在WC-6%Co基体上沉积SiC中间层,在1173 K时在SiC中间层上沉积Diamond涂层后,该界面模型界面处的键长最短,键能最大,界面结合性能最好。