Synthesis,Structure,and Surface Photo-electric Properties of a New Zn(Ⅱ)Coordination Complex Constructed from 2-(1H-benzotriazol-1-yl)acetic Acid and 1,10-Phenanthroline Ligands

A new binuclear Zn^Ⅱ coordination complex,Zn2（bta）（phen）2（Cl）3（1,Hbta = 2-（1Hbenzotriazol-1-yl）acetic acid and phen = 1,10-phenanthroline）,has been synthesized and characterized by single-crystal X-ray diffraction,IR spectroscopy,elemental,and photoluminescent analysis.Complex 1 crystallizes in triclinic system,space group P1 with a = 9.3040（19）,b = 10.694（2）,c =16.841（3） A°,α = 101.18（3）,β = 105.77（3）,γ = 91.72（3）°,V= 1575.8（5） A°3,C（32）H（22）Zn2Cl3N7O2,Mr =773.66,Dc = 1.631 g/cm^3,Z = 2,F（000） = 780,μ = 1.820 mm^-1,the final R = 0.1238 and wR =0.1131.X-ray diffraction analyses indicate that 1 displays two crystallographic independent Zn^Ⅱmetal centers with a distorted tetragonal pyramidal（ZnN4O） and a tetrahedral（ZnNCl3） geometries,respectively.The phen serves as a common N,N＇-bidentate ligand,and the bta^- as a unique N,O-bridged ligand in 1.In the crystal,1 forms a stable 3D supramolecular architecture by trifurcated hydrogen bonding C-H…C1 interactions and C-H…π,π…π stacking.1 showed photo-electric conversion properties.

Hydrothermal Synthesis, Crystal Structure and Surface Photo-electric Properties of a New Nickel(Ⅱ) 3-D Metalorganic Framework Constructed from the Rigid 1,4-Bis(imidazol-1-yl) benzene Ligand

A new 3-D nickel（Ⅱ） metal-organic framework（MOFs） with formula [Ni（bib）_2（SO_4）]_n（1）, where bib = 1,4-bis（imidazol-1-yl）benzene, has been synthesized and characterized by single-crystal X-ray diffraction, IR spectroscopy, elemental analysis and surface photovoltage spectroscopy（SPS）. Complex 1 crystallizes in monoclinic system, space group C2/c with a = 19.5988（6）, b = 9.7531（3）, c = 11.8146（4） ？, β = 96.185（3）°, V = 2245.20（12） ？~3, C_（24）H_（20）N_8NiO_4S, M_r = 575.25, D_c = 1.702 g/cm^3, Z = 4, F（000） = 1184, μ = 1.011 mm-1, the final R = 0.0293 and w R = 0.0702. X-ray diffraction analyses indicated that the center Ni^（2＋） ion is six-coordinated with an O_2N_4 donor set of two μ_2-SO_4^（2–） and four bib ligands, resulting in an ideal octahedral geometry. Topological analysis on complex 1 considers each Ni^（2＋） as a 6-connected node, while bib and sulfate ion as linkers, giving an α-Po topology with short Schl？fli symbol 412·63. In the crystal packing, the components interact with pairs of intermolecular C–H×××O hydrogen bonds. The SPS of 1 indicates that there are positive response bands in the range of 300~600 nm showing photo-electric conversion properties.

Preparation of Ligand Free Au NPs/PPV Composites with High Stability and Photo-electric Response

A novel kind of ligand free aurum nanoparticles（Au NPs）/poly（p-phenylene-vinylene）（PPV） composites was prepared via a simple approach. Although there were no ligands coating on the surface of the Au NPs, the Au NPs/PPV precursor composite exhibited excellent stability that no obvious variance was found as long as 6 months at -4 ℃ in aqueous and alcohol mixed solutions. This was attributed to the strong interaction between Au NPs and PPV precursor, which was further strengthened after heat transformation. Fourier transform infrared（FTIR） and Raman spectra showed the interaction between benzene ring in PPV and Au NPs led to the part transformation of the sp2 hybrid orbital into the sp3 one during the composite formation. As a result, the photoluminescence（PL） life time of PPV in the composite was longer than that of pure PPV. The Au NPs/PPV composite exhibited good photo-electric response, indicating their potential application in the area of the photoelectric conversion devices.

Thermally-enhanced photo-electric response of an organic semiconductor with low exciton binding energy for simultaneous and distinguishable detection of light and temperature

Simultaneous and distinguishable detection of external stimuli such as light and temperature is of great interest for a variety of scientific and industrial applications.Theoretically,an organic semiconductor with low exciton binding energy,low thermal activation energy and good charge transporting property produces thermally enhanced photo-electric response in organic phototransistors(OPTs),which thus provides an ideal and effective way to realize the simultaneous and distinguishable detection of temperature and light.However,there is no report on such a kind of organic semiconductor until now.Herein,we designed and synthesized a narrow band gap organic small molecule semiconductor 2,5-bis(2-butyloctyl)-3,6-bis(5-(4-(diphenylamino)phenyl)thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione(DPP-T-TPA)with low exciton binding energy(about 37 meV)and small activation energy(about 61 meV)for distinct thermal-dependence of charge carrier and exciton.The low exciton binding energy enables the semiconductor to exhibit strong thermal dependence of exciton dissociation,which contributes to the thermally-enhanced photo-electric response.Furthermore,the low thermal activation energy produces the weak thermal dependence of charge transport,which avoids the disturbance of thermally-modulated charge transport on photo-electric response.Benefiting from these two features,phototransistors based on DPP-T-TPA show great potential in simultaneous and distinguishable detection of light and temperature,which represents a novel and efficient way for bifunctional detection.

Error Analysis and Correction of Sunshine Duration Sensor

Beginning with the analysis on the principle of photoelectric sunshine duration sensor and combining with the problems occurred in use,various factors affecting the accuracy of observation are discussed. The digital sunshine duration sensor solutions are put forward by analysis on the data detection and observation,the corrections on the error factors are discussed,such as directional response characteristic,stray light and temperature characteristic. As a consequence,the precision of the sunshine duration with automatic observation is improved.

High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications

The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition(MOCVD).We report on the growth of 0.3-1μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms.The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same.The phase separations are inhibited when the growth pressure is higher than atmospheric pressure,leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.The In 0.4 Ga 0.6 N with the thickness of 300 nm is further demonstrated as the active region of solar cells,and the widest photoresponse range from ultraviolet to more than 750 nm is achieved.