The PN junction photodiode is fabricated with high resistivity P-type silicon ( ρ =12 000 Ω·cm).The experimental C-V curves with and without laser radiation were measured.The relative change of capacitanc...The PN junction photodiode is fabricated with high resistivity P-type silicon ( ρ =12 000 Ω·cm).The experimental C-V curves with and without laser radiation were measured.The relative change of capacitance can be greater than 100%,which is much greater than the relative change for low resistivity P-type silicon.The relative change of capacitance with and without laser radiation at zero bias is 121.7%.展开更多
This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes(SPADs),and the frequency scattering phenomenon of capacitance.The test results of the small-signal capacitance-voltage met...This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes(SPADs),and the frequency scattering phenomenon of capacitance.The test results of the small-signal capacitance-voltage method show that light can cause the capacitance of a SPAD device to increase under low-frequency conditions,and the photocapacitance exhibits frequency-dependent characteristics.Since the devices are fabricated based on the standard bipolar-CMOS-DMOS process,this study attributes the above results to the interfacial traps formed by Si-SiO_(2),and the illumination can effectively reduce the interfacial trap lifetime,leading to changes in the junction capacitance inside the SPAD.Accordingly,an equivalent circuit model considering the photocapacitance effect is also proposed in this paper.Accurate analysis of the capacitance characteristics of SPAD has important scientific significance and application value for studying the energy level distribution of device interface defect states and improving the interface quality.展开更多
文摘The PN junction photodiode is fabricated with high resistivity P-type silicon ( ρ =12 000 Ω·cm).The experimental C-V curves with and without laser radiation were measured.The relative change of capacitance can be greater than 100%,which is much greater than the relative change for low resistivity P-type silicon.The relative change of capacitance with and without laser radiation at zero bias is 121.7%.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62174052 and 61827812)Hunan Science and Technology Department Huxiang High-level Talent Gathering Project(Grant No.2019RS1037)+1 种基金Innovation Project of Science and Technology Department of Hunan Province(Grant No.2020GK2018)Postgraduate Scientific Research Innovation Project of Hunan Province(Grant No.QL20210131).
文摘This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes(SPADs),and the frequency scattering phenomenon of capacitance.The test results of the small-signal capacitance-voltage method show that light can cause the capacitance of a SPAD device to increase under low-frequency conditions,and the photocapacitance exhibits frequency-dependent characteristics.Since the devices are fabricated based on the standard bipolar-CMOS-DMOS process,this study attributes the above results to the interfacial traps formed by Si-SiO_(2),and the illumination can effectively reduce the interfacial trap lifetime,leading to changes in the junction capacitance inside the SPAD.Accordingly,an equivalent circuit model considering the photocapacitance effect is also proposed in this paper.Accurate analysis of the capacitance characteristics of SPAD has important scientific significance and application value for studying the energy level distribution of device interface defect states and improving the interface quality.
