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N^+P photodetector characterization using the quasi-steady state photoconductance decay method
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作者 Omeime Xerviar Esebamen 《Journal of Semiconductors》 EI CAS CSCD 2012年第12期11-15,共5页
When a material is irradiated, it becomes more electrically conductive due to the absorption of the electromagnetic radiation. As a result, the number of free electrons and holes changes and raises its electrical con-... When a material is irradiated, it becomes more electrically conductive due to the absorption of the electromagnetic radiation. As a result, the number of free electrons and holes changes and raises its electrical con- ductivity. A simple but interesting phenomenon to characterise a fabricated n+p photodetector in order to determine its linearity (photoresponse) and photoconductance was employed. Using the transient decay when the irradiation source is switched off, the minority carrier concentration, effective lifetime and surface recombination velocity present at the surface of the detector were measured. 展开更多
关键词 photoconductance decay photodetector characterization minority carrier lifetime surface recombi-nation velocity
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