We have fabricated the Al Ga N solar-blind ultraviolet metal–semiconductor–metal(MSM)photodetectors(PDs)with an Al composition of 0.55.The surface roughness and dislocations of the high-Al-content Al0.55 Ga0.45 N ep...We have fabricated the Al Ga N solar-blind ultraviolet metal–semiconductor–metal(MSM)photodetectors(PDs)with an Al composition of 0.55.The surface roughness and dislocations of the high-Al-content Al0.55 Ga0.45 N epitaxial layer are analyzed by atomic force microscopy and transmission electron microscopy,respectively.The device exhibits high spectral responsivity and external quantum efficiency due to the photoconductive gain effect.The current reveals a strong dependence on high temperatures in the range of 4–10 V.Moreover,the Poole–Frenkel emission model and changing space charge regions are employed to explain the carrier transport and photoconductive gain mechanisms for the Al Ga N PD,respectively.展开更多
基金supported in part by the National Natural Science Foundation of China(No.61974056)the Key Research and Development Program of Jiangsu Province(No.BE2020756)+3 种基金the National First-Class Discipline Program of Food Science and Technology(No.JUFSTR20180302)the Science and Technology Development Foundation of Wuxi(No.N20191002)the Postgradute Research&Practice Innovation Program of Jiangsu Province(No.KYCY20_1769)the Undergraduate Innovation and Entrepreneurship Training Program of Jiangsu Province(No.202010295125Y)。
文摘We have fabricated the Al Ga N solar-blind ultraviolet metal–semiconductor–metal(MSM)photodetectors(PDs)with an Al composition of 0.55.The surface roughness and dislocations of the high-Al-content Al0.55 Ga0.45 N epitaxial layer are analyzed by atomic force microscopy and transmission electron microscopy,respectively.The device exhibits high spectral responsivity and external quantum efficiency due to the photoconductive gain effect.The current reveals a strong dependence on high temperatures in the range of 4–10 V.Moreover,the Poole–Frenkel emission model and changing space charge regions are employed to explain the carrier transport and photoconductive gain mechanisms for the Al Ga N PD,respectively.
