Modeling of terahertz pulse generation from LT-GaAs ultrafast photoconductive switches

The technique of terahertz pulses generated from the photoconductive switches has been applied in the ultrafast electrical pulse metrology recently.A lumped-element theoretical model is established to describe the performance of the LT-GaAs ultrafast photoconductive switch used in the ultrafast pulse standard.The carrier transport processes of the photoexcited semiconductor,the attenuation and dispersion during terahertz pulse propagating are considered in the theoretical model.According to the experimental parameters,the waveforms of the generated terahertz pulses are calculated under optical excitations with different wavelengths of 840 nm and 450 nm,respectively.And comparisons between the theoretical results and the experimental results are carried out.

Ultra-Wideband Electromagnetic Radiation from GaAs Photoconductive Switches

The experiment results of ultrawide band electromagnetic radiation with DC biased GaAs photoconductive semiconductor switch combining double ridge horn antenna triggered by high repeat frequency femto-second laser pulse are reported.The GaAs switches are insulated by solid multi-layer transparent dielectrics and the distance of two electrodes is 3mm.The electrode material of the switch is ohmic contact through alloy technics with definite proportion of Au/Ge/Ni.This switch and double ridge horn antenna are integrated and the receive antenna is connected with the test instrument.From receiving antenna,ultra fast electrical pulse of 200ps rise time and 500ps pulse width is obtained,the repetition rate of the pulse is about 82MHz and the frequency spectrum is in the range of 4.7MHz～14GHz.The radiation characteristic of the ultrafast electrical pulse is analyzed.

Delayed-Dipole Domain Mode of Semi-Insulating GaAs Photoconductive Semiconductor Switches

A mode for the periodicity and weakening surge in semi-insulating GaAs photoconductive semiconductor switches is proposed based on the transferred-electron effect. It is shown that the periodicity and weakening surge is caused by the interaction between the self-excitation of the resonant circuit and transferred electron oscillation of the switch. The bias electric field （larger than Gunn threshold） across the switch is modulated by the AC elec-tric field,when the instantaneous bias electric field E is swinging below Gunn electric field threshold ET but grea-ter than the sustaining field Es （the minimum electric field required to support the domain） at the time of the do-main reaching the anode, and then the delayed-dipole domain mode of switch is obtained. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length prod-uct of 10^12 cm^-2,and the semi-insulating GaAs photoconductive semiconductor switch is essentially a type of pho-ton-activated charge domain device.

Transit Properties of High Power Ultra\|Fast Photoconductive Semiconductor Switch

Experiments of a GaAs ultra\|fast Photo\|Conductive Semiconductor Switch (PCSS) are reported. Both the linear and nonlinear modes were observed when triggered by the μJ nano\|second laser. The peak current could be as high as 560A. The rise time of the current pulse responses is less than 200ps when triggered with 76MHz femto\|second laser.

Transient Characteristics of a Nonlinear GaAs Photoconductive Semiconductor Switch

The transient resistance,voltage,and power of a nonlinear GaAs photoconductive semiconductor switch （PCSS） are presented by the finite difference formula to deal with the experiment data, based on the conversation of energy in the switch circuit. This method resolves the problem of directly measuring the transient characteristics of PCSS in nonlinear mode. The curve of transient voltage shows that the average electric field of PCSS in the lock-on period is always higher than the Gunn threshold,and increases monotonically. By comparing the transient power curves of the PCSS and the electrical source,it is demonstrated directly that the power shortage leads to the PCSS from the lock-on state into the selfturnoff state,so a controllable turnoff of the PCSS in lock-on by changing the distribution of the circuit power is predicted.

Photoconductive semiconductor switch-based triggering with 1 ns jitter for trigatron

Synchronization for multiple-pulse at nanosecond range shows a great value on the power multiplication and synchronous electric fieldsapplications. Nanosecond or sub-ns jitter synchronization is essential for the improved working efficiency of the large amounts of pulse modulesand accurate requirements for the power coherent combining applications. This paper presents a trigger generator based on a laser diodetriggered GaAs photoconductive semiconductor switch (PCSS) with low jitter and compact size characteristics. It avoids the high currentsthat are harmful to high-gain mode PCSSs. In the trigger circuit, a 200 pF capacitor is charged by a microsecond-scale 18 kV pulse and thendischarged via the high-gain mode GaAs PCSS to trigger the high-power trigatron switch. When triggered by the ~10 ns pulse generated by thePCSS, the DC-charged trigatron can operate in the 20e35 kV range with 10 ns rise time and 1 ns delay-time jitter.

Photovoltaic Response Characteristics of GaAs Photoconductive Switches Under High Gain Mode

Given is the experiment results in which the laser pulses of 1 046 nm and 532 nm are used to trigger the semi-insulation GaAs photoconductive semiconductor switch(PCSS) with an electrode distance of 4 mm. And made is an analysis of the switchs photovoltaic response characteristics under the high gain mode when the biased field is bigger than the Geng effect field. Also a theory is presented that the main reason for the photovoltaic pulse response delay is the transmission of charge domain, caused by the presence of EL2 energy level in the chip material. Finally, the transmission time of charge domain is calculated and a result that inosculates with the experiment is attained.

Experimental Study of Surface Flashover Field of SI-GaAs Photoconductive Semiconductor Switch

With its unique features, photoconductive semiconductor switch (PCSS) is generally recognized today as a promising power electronic device. However, a major limitation of PCSS is its surprisingly low voltage threshold of surface flashover (SF). In this paper, an experimental study of surface flashover of a back-triggered PCSS is presented. The PCSSs with electrode gap of 18 mm are fabricated from liquid encapsulated czochralski (LEC) semi-insulating gallium arsenide (SI-GaAs), and they are either un-coated, or partly coated, or en- tirely coated PCSSs with high-strength transparent insulation. The SF fields of the PCSSs are measured and discussed. According to the experimental results, the high-dielectric-strength coating is efficient in both reducing the gas desorption from semiconductor and increasing the SF field: a well-designed PCSS can resist a voltage up to 20 kV under the repetition frequency of 30 Hz. The physical mechanism of the PCSS SF is analyzed, and the conclusion is made that having a channel structure, the SF is the breakdown of the contaminated dielectric layer at the semiconductor-ambient dielectric interface. The non-uniform distribution of the surface field and the gas desorption due to thermal effects of semiconductor surface currents are key factors causing the SF field reduction.

基于砷化镓光电导开关的双极性固态脉冲功率源

设计了一种基于砷化镓(GaAs)光电导开关(PCSS)的双极性固态脉冲功率源。通过对两级脉冲形成线(PFL)结构端反射系数的研究,分析了单极性正、负脉冲以及双极性脉冲产生的波过程,并采用PSpice工具开展电路仿真研究。研究了输入端电阻阻抗对脉冲拖尾的影响,提出了脉冲拖尾调制和脉冲宽度调制的方法。基于体结构GaAs PCSS和两级脉冲形成线结构,搭建了电阻隔离的脉冲充电实验平台,采用光路分时触发技术对光电导开关导通时序进行调控。实验结果表明,所研制的双极性固态脉冲功率源在2.5 kV偏压下可产生峰峰值达3.26 kV、脉宽5.6 ns、重复频率1 kHz的双极性纳秒冲激脉冲,验证了将雪崩GaAs PCSS与多级波拓扑结构PFL结合产生双极性纳秒冲激脉冲的可行性。

异面结构雪崩GaAs光导开关的制备及特性测试

雪崩砷化镓光导开关(PCSS)因其超快开关速度、低触发抖动、光电隔离、高功率容量、高重复频率以及器件结构灵活的特点,得到广泛应用。制备封装了电极间隙为5 mm的异面结构GaAs光导开关,对不同偏置电场下(36~76 kV/cm)开关的暗态和开态的电学特性进行了测试分析,结果表明其具有百皮秒~纳秒量级的上升沿、低暗态泄漏电流(0.15~6.61μA)、高耐压(18~38 kV)的特点。实验探究了开关工作次数与输出电压峰值的关系,结果表明随着工作次数的增大,输出电压幅值呈台阶型降低趋势,在20 kV、2 Hz条件下,开关寿命达4.0×10^(4)次。

Enhanced resistance switching stability of transparent ITO/TiO_2/ITO sandwiches

We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.

Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches

Photoconductive semiconductor switches （PCSSs） are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.

低光能触发的砷化镓光导开关导通机理

该文建立了砷化镓(GaAs)光导开关(PCSS)的一维器件仿真模型,研究了低光能触发条件下电流通道内关键物理参数的瞬态变化过程,提出了GaAs PCSS的多雪崩电离畴物理模型,能够自洽地解释低光能触发、超快速导通和电压锁定等开关特征。GaAsPCSS受12 W、905 nm脉冲激光触发后,电流通道内产生多个高场强(200~600 kV/cm)雪崩电离畴,雪崩电离畴随等离子体浓度的提高而发展、湮灭,导致开关延迟3.0 ns后在147 ps内超快速导通。开关导通后,电流通道内仍存在少量雪崩电离畴,使开关导通后电压锁定。雪崩电离畴运动导致GaAs PCSS工作时出现ps级电流振荡现象,分析了振荡信号产生的物理原因。同时,开展了低光能触发条件下GaAs PCSS雪崩导通实验研究。结果表明,当采用50?固态脉冲形成线、4 mm间距异面结构、PCSS工作电压为17.5 kV时,负载输出脉冲峰值功率达MW级,脉冲上升时间约为620ps,最高重频达到20 kHz。

光导开关研究进展及其在脉冲功率技术中的应用

概述了GaAs光导开关的发展历史,通过对GaAs和SiC进行比较指出,SiC由于禁带宽度大、击穿场强高、电子饱和漂移速度大、热导率高等优势被认为是更好的光导开关材料。比较了本征光电导和非本征光电导的不同之处,报道了利用本征光电导和非本征光电导的SiC光导开关的最新进展。介绍了光导开关在超宽带源和紧凑型脉冲功率系统中的应用,提出了SiC光导开关进一步发展的关键技术并进行了展望。

高压超快 GaAs 光电导开关的耐压设计与绝缘保护

通过对Ａｕ／Ｇｅ／Ｎｉ电极结构的最佳化设计，采用Ｓｉ３Ｎ４硅凝胶钝化／保护技术，首次研制出一种全固态的ＧａＡｓ横向高压光电导开关。器件具有理想的暗态伏安特性，绝缘强度达３５ｋＶ／ｃｍ。

用飞秒激光触发GaAs光电导体产生THz电磁波的研究

报道了用半绝缘 Ga As材料研制的光电导偶极天线在飞秒激光脉冲触发下辐射 THz电磁波的实验结果 .Ga As光电导偶极芯片的两个欧姆接触电极间隙为 3m m,采用 Si3N4 薄膜绝缘保护 ,在 5 4 0 V直流偏置下被波长80 0 nm,脉宽 14 fs,重复频率 75 MHz,平均功率 130 m W的飞秒激光脉冲触发时产生 THz电磁波 .用电光取样测量得到了 THz电磁脉冲的时域波形和频谱分布 .THz电磁波的辐射峰值位于 0 .5 THz左右 ,频谱宽度大于 2 THz,脉冲宽度约为 1ps.

基于大功率激光二极管的光导开关导通特性

研究了应用于介质壁加速器的小间隙光导开关在大功率激光二极管驱动下的导通特性.激光二极管产生的激光脉冲中心波长为905 nm,脉冲宽度（FWHM）约20 ns,前沿约3.1 ns,抖动小于200 ps,峰值功率约90 W.所用光导开关为异面电极结构的砷化镓（GaAs）光导开关,电极间隙5 mm,偏置电压为15～22kV脉冲高压,工作在非线性（高增益）模式.测得光导开关最小导通电阻4.1Ω,抖动小于1 ns,偏置电压在18kV时平均使用寿命约200次.

小间隙异面电极结构的光导开关

介绍了应用于介质壁加速器的小间隙异面电极结构的光导开关。所用光导开关为异面结构的砷化镓(GaAs)光导开关,电极间隙5mm,偏置电压为15～22kV脉冲高压,工作在非线性(高增益)模式,由半导体激光器产生的脉冲激光触发。脉冲激光的中心波长为905nm,脉冲宽度(FWHM)约20ns,前沿约3.1ns,抖动小于200ps,峰值功率约90W。实验结果表明:光导开关的偏置电压较低时,开关寿命较长,导通性能较差;偏置电压较高、驱动脉冲激光功率较大时,开关导通性能较好,寿命较短。

高倍增 GaAs 光电导开关的设计与研制

首次报导了采用Ｓｉ３Ｎ４、硅凝胶钝化／保护的微带线低电感输出的全固态ＳＩ－ＧａＡｓ高压亚纳秒光电导开关的研究结果，该器件的耐压强度为３５ｋＶ／ｃｍ，具有理想的暗态伏安特性；典型的电流脉冲上升时间为２００ｐｓ，电流达１００Ａ．并在实验中观测到典型的高倍增（Ｌｏｃｋｏｎ效应）现象．

激光二极管触发GaAs光导开关导通特性

基于固态平板传输线、同轴电缆、GaAs光导开关和激光二极管触发系统,设计了两种脉冲形成线电路结构,研究了激光二极管触发条件下的GaAs光导开关的导通特性:基于GaAs光导开关的固态Blumlein脉冲形成线可输出具有快前沿的高功率、窄脉冲电压;给出了测量光导开关抖动和导通电阻的方法,测得光导开关的抖动、导通电阻都随激光能量和充电电压的增大而减小,其最小抖动约0.12ns,导通电阻为欧姆量级;测得光导开关导通电流约250～300A(平板传输线特征阻抗Z0=25?),并探索了光导开关并联分流的可行性;测量出光导开关的导通时间约0.4～0.6ns,随工作次数的增多,导通时间逐渐增大。