We report a comparative study on photo-crystallization in a-Se95 Te5 and a-Se95In5 alloys. The photo-crystallization is achieved by a shining white line on the thin films of these alloys in vacuum for different exposu...We report a comparative study on photo-crystallization in a-Se95 Te5 and a-Se95In5 alloys. The photo-crystallization is achieved by a shining white line on the thin films of these alloys in vacuum for different exposure times. The results indicate that photo-crystallization is fast in a-Se95In5 alloy as compared to a-Se95 Te5 alloy. This is explained in terms of lower thermal stability of a-Se95In5 alloy as compared to a-Se95 Te5 alloy.展开更多
The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)2 chal-cogenide films with light illumination. The shift in well-annealed films could be recovered by annealing the films ...The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)2 chal-cogenide films with light illumination. The shift in well-annealed films could be recovered by annealing the films near the glass-transition temperature again. The photocrystalliza-tion was also observed in amorphous Ge(S,Se)2 films with light illumination by the transmitting electron microscope measurement. The photoinduced phenomina of the amorphous Ge(S,Se)2 films could be applied to designing some new kinds of optical storage materials.展开更多
文摘We report a comparative study on photo-crystallization in a-Se95 Te5 and a-Se95In5 alloys. The photo-crystallization is achieved by a shining white line on the thin films of these alloys in vacuum for different exposure times. The results indicate that photo-crystallization is fast in a-Se95In5 alloy as compared to a-Se95 Te5 alloy. This is explained in terms of lower thermal stability of a-Se95In5 alloy as compared to a-Se95 Te5 alloy.
文摘The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S,Se)2 chal-cogenide films with light illumination. The shift in well-annealed films could be recovered by annealing the films near the glass-transition temperature again. The photocrystalliza-tion was also observed in amorphous Ge(S,Se)2 films with light illumination by the transmitting electron microscope measurement. The photoinduced phenomina of the amorphous Ge(S,Se)2 films could be applied to designing some new kinds of optical storage materials.
