InGaZnO-based photoelectric synaptic devices for neuromorphic computing

Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.

In-fiber photoelectric device based on graphene-coated tilted fiber grating

Graphene and related two-dimensional materials have attracted great research interests due to prominently optical and electrical properties and flexibility in integration with versatile photonic structures.Here,we report an in-fiber photoelec-tric device by wrapping a few-layer graphene and bonding a pair of electrodes onto a tilted fiber Bragg grating(TFBG)for photoelectric and electric-induced thermo-optic conversions.The transmitted spectrum from this device consists of a dense comb of narrowband resonances that provides an observable window to sense the photocurrent and the electrical injection in the graphene layer.The device has a wavelength-sensitive photoresponse with responsivity up to 11.4 A/W,allowing the spectrum analysis by real-time monitoring of photocurrent evolution.Based on the thermal-optic effect of electrical injection,the graphene layer is energized to produce a global red-shift of the transmission spectrum of the TF-BG,with a high sensitivity approaching 2.167×10^(4)nm/A^(2).The in-fiber photoelectric device,therefore as a powerful tool,could be widely available as off-the-shelf product for photodetection,spectrometer and current sensor.

Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition

Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.

Mn^(4+) activated phosphors in photoelectric and energy conversion devices

Owing to their high luminous efficiency and tunable emission in both red light and far-red light regions,Mn^(4+)ion-activated phosphors have appealed significant interest in photoelectric and energy conversion devices such as white light emitting diode(W-LED),plant cultivation LED,and temperature thermometer.Up to now,Mn^(4+)has been widely introduced into the lattices of various inorganic hosts for brightly redemitting phosphors.However,how to correlate the structure-activity relationship between host framework,luminescence property,and photoelectric device is urgently demanded.In this review,we thoroughly summarize the recent advances of Mn^(4+)doped phosphors.Meanwhile,several strategies like co-doping and defect passivation for improving Mn^(4+)emission are also discussed.Most importantly,the relationship between the protocols for tailoring the structures of Mn^(4+)doped phosphors,increased luminescence performance,and the targeted devices with efficient photoelectric and energy conversion efficiency is deeply correlated.Finally,the challenges and perspectives of Mn^(4+)doped phosphors for practical applications are anticipated.We cordially anticipate that this review can deliver a deep comprehension of not only Mn^(4+)luminescence mechanism but also the crystal structure tailoring strategy of phosphors,so as to spur innovative thoughts in designing advanced phosphors and deepening the applications.

On the Physical Process and Essence of the Photoelectric Effect

A hundred years ago, Planck and Einstein and others created quantum theories or quantum mechanics while they explained the photoelectric effect. Planck and Einstein empirically obtained a statistical relationship between the energy of light quantum and the frequency of light but have not studied the physical process and essence of the photoelectric effect, so some photoelectric phenomena are difficult to be explained by existing quantum mechanics currently. In this paper, a dynamical process of orthogonal interaction between a photon and an electron to form a new state of matter in photoelectric effect experiments is studied so finding that the Planck constant is a product value of the mass, length, and velocity of a high-energy particle. The dynamics of the orthogonal collision of matter (particles) can not only give the physical process and essence of the photoelectric effect, but also have great significance for the further development of quantum mechanics. It can physically explain phenomena such as wave-particle duality and quantum entanglement in the motion of high-energy particles. Its prospects can be widely used in cosmic physics, macro physics, and micro physics.

Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

Antimony selenide(Sb2Se3) films are widely used in phase change memory and solar cells due to their stable switching effect and excellent photovoltaic properties. These properties of the films are affected by the film thickness. A method combining the advantages of Levenberg–Marquardt method and spectral fitting method(LM–SFM) is presented to study the dependence of refractive index(RI), absorption coefficient, optical band gap, Wemple–Di Domenico parameters, dielectric constant and optical electronegativity of the Sb2Se3films on their thickness. The results show that the RI and absorption coefficient of the Sb2Se3films increase with the increase of film thickness, while the optical band gap decreases with the increase of film thickness. Finally, the reasons why the optical and electrical properties of the film change with its thickness are explained by x-ray diffractometer(XRD), energy dispersive x-ray spectrometer(EDS), Mott–Davis state density model and Raman microstructure analysis.

Study on the Reparative Effect of Peptide RW3 Binding Active Collagen after Photoelectric Skincare

The photoelectric microneedle treatment instrument is also widely used due to the rapid development of medical cosmetology in China in recent years. It also causes a lot of skin discomfort after the consumers carry out such projects. This study, which combines small molecule active peptides (RW3) and active collagens and imitates the photoelectric treatment through in vitro and in vivo experiment, finds that small molecule active peptides (RW3) and active collagens have different improvement effects on cell proliferation, migration, anti-UV damage, inhibition of ear swelling and inflammation in mice, repair of UV damage and skin damage caused by microneedles. .

Damage Detection of Composite Material Intelligent Structure with a New Photoelectric System

A kind of photoelectric system that is suitable to measuring and to testing the damage of the composite material intelligent structure was presented. It can measure the degree of damage of the composite intelligent structure and it also can tell us the damage position in the structure. This system consists of two parts ： software and hardware. Experiments of the damage detection and the analysis of the composite material structure with the photoelectric system were performed, and a series of damage detection experiments was conducted. The results prove that the performance of the system is well and the effects of the measure and test are evident. Through all the experiments, the damage detection technology and test system are approved to be real-time, effective and reliable in the damage detection of the composite intelligent structure.

Photoelectric detection technology of laser seeker signals

The measurement of the rolling angle of the projectile is one of the key technologies for the terminal correction projectile.To improve the resolution accuracy of the rolling angle in the laser seeker weapon system, the imaging model of the detector, calculation model of the position and the signal-to-noise ratio(SNR) model of the circuit are built to derive both the correlation between the resolution error of the rolling angle and the spot position, and the relation between the position resolution error and the SNR. Then the influence of each parameter on the SNR is analyzed at large,and the parameters of the circuit are determined. Meanwhile, the SNR and noise voltage of the circuit are calculated according to the SNR model and the decay model of the laser energy. Finally,the actual photoelectric detection circuit is built, whose SNR is measured to be up to 53 d B. It can fully meet the requirement of0.5° for the resolution error of the rolling angle, thereby realizing the analysis of critical technology for photoelectric detection of laser seeker signals.

An optical glass plane angle measuring system with photoelectric autocollimator

Optical glass is the most widely used optical material.It is necessary to measure its geometric characteristic quickly and reliably to meet the quality of optical glass.A vision measuring system combining photoelectric autocollimation system with high-precision rotary stage is designed to measure the parallelismand angle of optical glass plane.A novel method is proposed to overcome the difficulty ofmeasuring parallelismof optical glass.The model of parallelism and angle measurement is established and the feasibility is analyzed.The image processing algorithm combining Steger algorithm with the least square method is selected.The uncertainty of angle measurement system for angle measurement is 3.0″.The system can solve the problem of measuring the angle of optical glass with high precision and has important significance for optical system.

Preparation and photoelectric properties of cadmium sulfide quantum dots

Cadmium sulfide quantum dots(CdS QDs) are widely used in solar cells, light emitting diodes, photocatalysis, and biological imaging because of their unique optical and electrical properties. However, there are some drawbacks in existing preparation techniques for CdS QDs, such as protection of inert gas, lengthy reaction time, high reaction temperature, poor crystallinity, and non-uniform particle size distribution. In this study, we prepared CdS QDs by liquid phase synthesis under ambient room temperature and atmospheric pressure using sodium alkyl sulfonate, CdCl_2, and Na_2S as capping agent, cadmium, and sulfur sources respectively. This technique offers facile preparation, efficient reaction, low-cost, and controllable particle size. The as-prepared CdS QDs exhibited good crystallinity, excellent monodispersity, and uniform particle size. The responsivity of CdS QDs-based photodetector is greater than 0.3 μA/W, which makes them suitable for use as ultra-violet(UV) detectors.

Performance evaluation and optimization design of photoelectric pyrometer detection optical system

The measurement and control of high temperature play very important roles in national defense,military,scientific experiments,industrial and agricultural production.Photoelectric pyrometer is one of the important radiation thermometers for non-contact temperature measurement.It has an important application in the field of high temperature measurement,and its performance directly affects the accuracy of temperature measurement.By improving the design of the detection optical system of the photoelectric pyrometer,the imaging performance of the photoelectric pyrometer can be improved effectively,and the temperature measurement accuracy can be improved.In this paper,the temperature measurement principle of photoelectric pyrometer,the wo rking principle of the detection optical system and the composition of the system are introduced.The optical components that affect the imaging of the optical system of the photoelectric pyrometer are analyzed.The optical pyrometer detection optical system is simulated by ZEMAX software,based on the analysis results,the Modulation Transfer Function(MTF)and the spot Diagram are used as the main evaluation criteria to optimize the design of the objective lens of the photoelectric pyrometer detection optical system.The imaging performance of the photoelectric pyrometer detection optical system and the accuracy of temperature measurement of the photoelectric pyrometer are improved by optimization design of the detection optical system.

Photoelectric Properties of Soluble ZnPc-Epoxy Derivative Doped with C_(60)

A kind of soluble phthalocyanine derivative （ZnPc-epoxy derivative） was synthesized, and the influence of C60 on the photoelectric properties of the derivative was studied. The results of ultraviolet-visible （UV-Vis） spectra show that the absorption of the complex is larger than that of the ZnPc-epoxy derivative at B belt. But compared with the derivative, the absorption of the complex decreased at Q belt. The fluorescence spectra show that C60 takes role as annihilation in ZnPc-epoxy derivative. Photo-current tests show that the ZnPc-epoxy derivative-C60 film exhibits increasing photoconductive property.

Effect of surfactants on the structure and photoelectric properties of ITO films by sol-gel method

The Indium tin oxide（ITO） thin film possesses excellent photoelectric properties that enable it to act as an ideal transparent conductor.To obtain high-quality ITO films through sol-gel method, the ionic surfactant monoethanolamine and the non-ionic surfactant polyethylene glycol（PEG） were added to the ITO precursor slurry.The influences of surfactants on the structural and photoelectric properties of ITO film samples were investigated.XRD patterns indicated that surfactant monoethanolamine contributed to film predominant grain orientation along the（400） plane.The high transmittance（over 95%） was attributed to the preferred orientation and the grain size expansion of ITO films.SEM showed that the surface particle size and the morphology of ITO films were strongly dependent on the kind of surfactants used.Moving to the shortwave region, the absorption edge of the films exhibited the Burstein-Moss shift.

Application of BAIRD Photoelectric Spectrometer in Quantitative Analysis of Iron and Steel

BAIRD SPECTROVAC 2000(DV 5) consisting of new type of HR-400 high repeat rate spark spectrosource, air cooled sample stand and an annular purged tungsten counter electrode has been used continuously in the lab for many years and resulted in good economic benefits. The paper describes the application of the spectrometer in quantitative analysis of cast iron and steel products, and the experience and technique may be helpful to those who are using the same kind of instrument.

Photoelectric characteristics of silicon P–N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy

Silicon nanopillars are fabricated by inductively coupled plasma （ICP） dry etching with the cesium chloride （CsCl） islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus （P） diffusion by liquid dopant source （POCl3） at 870 ℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy （XPS） is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.

Photoelectric properties of thin Eu^(3+)-doped TiO_2 films sensitized by cis-RuL_2(SCN)_2·2H_2O

Thin nanocrystalline TiO2 films doped by europium ions (Eu3+) were obtained by the sol-gel method. The photoelectric properties of Eu3+-doped TiO2 film electrode sensitized by cis-RuL2(SCN)2·2H2O (L=cis-2,2′-bipyridine-4,4′-dicarboxlic acid) ruthenium complex were studied. The thin films were characterized by X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. Effect of doping Eu3+ on microscopic structure and photoelectrical properties were discussed. The result shows that doping europium ions makes specific surface area of these films larger, which contributes to improving the photoelectric properties. It is found that an optimal composition doped with 0.2 mol.% Eu3+ exhibits the highest photoelectric properties. Isc is 0.37 mA·cm-2, which is 0.17 mA·cm-2 bigger than that of un-doped films; Voc is 405 mV, which is 50 mV bigger than that of un-doped films.

Improvement Detecting Method of Optical Axes Parallelism of Shipboard Photoelectrical Theodolite Based on Image Processing

An improvement detecting method was proposed according to the disadvantages of testing method of optical axes parallelism of shipboard photoelectrical theodolite (short for theodolite) based on image processing. Pointolite replaced 0.2'' collimator to reduce the errors of crosshair images processing and improve the quality of image. What’s more, the high quality images could help to optimize the image processing method and the testing accuracy. The errors between the trial results interpreted by software and the results tested in dock were less than 10'', which indicated the improve method had some actual application values.

Performance of a plastic scintillation fiber dosimeter based on different photoelectric devices

The photoelectric device of a scintillation dosimeter converts photons produced by radiation into an electrical signal.Its features directly determine the overall performance of the dosimeter.For a plastic scintillation fiber dosimeter(PSFD)with a current readout mode,systematic studies of the stability and light-dose response were performed for the photomultiplier tube(PMT),silicon photomultiplier(SiPM),avalanche photodiode(APD),and photodiode(PD).The temperature stability,long-term stability,repeatability,signal-to-noise ratio(SNR),and current dose response of the PSFD with the abovementioned photoelectric devices were studied using a pulsed LED light source and the Small Animal Radiation Therapy platform.An exponential relationship between the dark/ne current and temperature was obtained for all the devices.I is shown that the APD is the most sensitive device to temperature,with a current dependence on temperature reaching 6.5%C^(-1)at room temperature,whereas for the other devices this dependence is always<0:6%C^(-1).In terms of long-term stability,the net current of PD can change by up to 4%when working continuously for 8 h and 2%when working intermittently for 32 h,whereas for the other devices,the changes are all<1%.For the dose response,the PMT and SiPM exhibit excellent linear responses and SNRs within the range of 0.1-60 Gy/min For the PSFD with a current readout mode,the performance of the PMT and SiPM is concluded to be better than that of the other devices in the study.In particular,the SiPM,which has a compact size,low bias voltage,and antimagnetic interference,has great advantages for further applications.

Multi-area detection sensitivity calculation model and detection blind areas influence analysis of photoelectric detection target

Multi-element array photoelectric detector is the core devices to form a photoelectric detection target with a large field of view.This photoelectric detection target brings about the problem of uneven detection sensitivity distribution in the detection screen.To improve the uneven detection sensitivity of this photoelectric detection target,this paper analyzes the distribution law of the uneven detection sensitivity of the photoelectric detection target using the multi-element array photoelectric detector,dissects the main factors affecting the detection sensitivity according to the photoelectric detection principle,establishes the calculation model of detection sensitivity of the photoelectric detection target in the different detection areas and proposes a method to improve the detection sensitivity by compensating the gain of each unit photoelectric detector.The analysis of simulation and experimental results show that the proposed method of photoelectric detection target can effectively improve the output signal amplitude of the projectile under the certain detection distance,in particular,the output signal amplitude of the projectile is significantly increased when the projectile passes through the detection blind area.The experimental results are consistent with the simulation results,which verify the effectiveness of the proposed improvement method.