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Construction, photoelectric response and phase transition for new hybrid double perovskites showing narrow band gaps
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作者 Changyuan Su Zhixu Zhang +5 位作者 Jie Yao Ming Chen Peizhi Huang Yi Zhang Dawei Fu Liyan Xie 《Chinese Chemical Letters》 SCIE CAS CSCD 2023年第4期595-600,共6页
To explore the lead-free key scientific issue in perovskite, double perovskite based on Ag Bi and Cu Bi was naturally selected as a competitive candidate due to its fascinating functional features, such as self-powere... To explore the lead-free key scientific issue in perovskite, double perovskite based on Ag Bi and Cu Bi was naturally selected as a competitive candidate due to its fascinating functional features, such as self-powered circularly polarized light detection, X-ray detection, photoluminescence and so on. However, the most challenging point is to simulate the structure and function of traditional lead-based perovskite in new double perovskite. At the same time, there are few suitable double perovskite systems with optical and electrical potential. The above two points greatly limit the competitiveness of double perovskite. In order to solve this problem, firstly, by analyzing and comparing previous studies,we used 2,2-dimethylpropan-1-aminium(abbreviated as 2,2-DPA) as the organic template to assemble materials. Solid-to-solid phase transition materials(2,2-DPA)3Bi2I91 and(2,2-DPA)3Pb2I72 were constructed. Along the path of lead-free and two-dimensional maintenance, we successfully synthesized(2,2-DPA)4AgBiI8.H_(2)O 3 and(2,2-DPA)_(4)CuBiI8.H_(2)O 4. As two typical semiconductors, 3 and 4 with narrower optical band gaps of 1.98 and 1.76 e V show obvious photo-response when the xenon lamp with intensity of 20 m W/cm^(2)is on or off, implying that they may be applied to light-harvesting and light-detecting devices. By referring to the phase transition mechanism of 1 and 2, 3 may be caused by ordered-disordered transition of the organic part, which was proven to be the first solid-to-solid phase transition material with <100>-oriented layered double perovskites with n = 1 by systematic characterization methods after dehydration for all we know. We believed that this work can provide meaningful guidance for the development of lead-free double perovskites. 展开更多
关键词 Double perovskite photoelectric response Phase transition Dielectric properties Semiconducting behavior
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Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition 被引量:1
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作者 王少青 程妮妮 +6 位作者 王海安 贾一凡 陆芹 宁静 郝跃 刘祥泰 陈海峰 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第4期707-713,共7页
Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better cr... Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly. 展开更多
关键词 β-Ga_(2)O_(3) film thickness solar blind photodetectors photoelectric response
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Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC
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作者 郝昕 陈远富 +3 位作者 王泽高 刘竞博 贺加瑞 李言荣 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第7期37-40,共4页
Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigat... Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications. 展开更多
关键词 epitaxial graphene photoelectrical response oxygen absorption
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Stable hydrogen-bonded organic frameworks and their photo-and electro-responses
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作者 Ying Hou Xin-Song Huang +3 位作者 Sheng-Hao Gong Chen Liu Yangyang Liu Tian-Fu Liu 《Nano Research》 SCIE EI 2024年第8期7675-7699,共25页
Hydrogen-bonded organic frameworks(HOFs)are a recent class of porous materials that have garnered considerable research interest owing to their distinctive characteristics.HOFs can be constructed through judicious sel... Hydrogen-bonded organic frameworks(HOFs)are a recent class of porous materials that have garnered considerable research interest owing to their distinctive characteristics.HOFs can be constructed through judicious selection of H-bonding motifs,which are further enforced by other weak intermolecular interactions such asπ–πstacking,van der Waals forces,and framework interpenetration.Taking advantage of these interactions,we can expand the functional field of HOFs by introducing active molecules.Recently,researchers have made substantial advancements in using HOFs for chemical sensing,catalysis,proton conduction,biological applications,and others.The low bonding energy of H-bonds allows for precise control over the concentration of ligands in solvents,forming diverse HOF structures.These varied structures offer significant advantages for producing HOFs with photo-responsive and electro-responsive properties.However,the presence of H-bonds in HOFs results in their inherent lower stability compared to metal-organic frameworks(MOFs)and covalent-organic frameworks(COFs)formed via coordination and covalent bonds,respectively.As a result,the pursuit of stable and innovative HOF materials with novel functional sites remains an ongoing challenge.This review provides an overview of recent research progress in the development of new strategies for stable HOF synthesis and applications of HOFs with stimuli-responsive properties.We first classified all synthetic methods reported to date and discussed the stable HOFs synthesized,as well as their unique properties and applications.In addition,we summarized the applications of HOFs utilizing their synergistic responses to external stimuli,including photo,electrical,pressure,and chemical stimuli.We systematically reviewed stable HOF synthesis and applications,which may lead to a deeper understanding of the structure–activity relationship for these materials and guide future HOF design. 展开更多
关键词 stable hydrogen-bonded organic frameworks(HOFs) photo-response electro-response photoelectric synergistic response
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构建Ⅰ型SnS_(2)/Bi_(2)Se_(3)和Ⅱ型SnS_(2)/Bi_(2)Te_(3)范德瓦尔斯异质结构提升其光电性能 被引量:1
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作者 罗铭威 卢春辉 +4 位作者 刘玉琪 韩涛涛 葛燕青 周译玄 徐新龙 《Science China Materials》 SCIE EI CAS CSCD 2022年第4期1000-1011,共12页
基于新型先进材料的异质结构为提高光电器件的光电性能奠定了基石.能带排列是理解异质结构中载流子输运机理和界面动力学的关键.本文利用物理气相沉积法和化学气相沉积法制备了SnS_(2)/Bi_(2)X_(3)(X=Se,Te)范德华异质结构.通过高分辨率... 基于新型先进材料的异质结构为提高光电器件的光电性能奠定了基石.能带排列是理解异质结构中载流子输运机理和界面动力学的关键.本文利用物理气相沉积法和化学气相沉积法制备了SnS_(2)/Bi_(2)X_(3)(X=Se,Te)范德华异质结构.通过高分辨率X射线光电子能谱测量的能带排列证实了Ⅰ型SnS_(2)/Bi_(2)Te_(3)和Ⅱ型SnS_(2)/Bi_(2)Te_(3)异质结构的成功制备.基于SnS_(2)/Bi_(2)X_(3)异质结构的光电化学型光电探测器的光电响应得到了极大的提高.Ⅰ型SnS_(2)/Bi_(2)Te_(3)和Ⅱ型SnS_(2)/Bi_(2)Te_(3)异质结构的光电流密度均比SnS_(2)、Bi_(2)Te_(3)和Bi_(2)Te_(3)的光电流密度高一个数量级以上.SnS_(2)/Bi_(2)X_(3)异质结构光电性能的显著提高主要是由于:(i)异质结构中光激发电子和空穴的有效分离;(ii)SnS_(2)/Bi_(2)X_(3)异质结构与电解质界面具有更高的电荷转移效率和载流子密度;(iii)异质结构的构建拓宽了光的吸收范围.此外,直立的SnS_(2)还可以有效地捕获光子以提高其光电性能.Ⅰ型SnS_(2)/Bi_(2)Te_(3)异质结构的光电性能优于Ⅱ型SnS_(2)/Bi_(2)Te_(3)异质结构,这主要源于异质结构/电解质界面上更高效的电荷传输能力.实验研究结果表明,Ⅰ型和Ⅱ型异质结构的构建为开发高性能光电探测器及其他光电器件提供了新思路. 展开更多
关键词 SnS_(2)/Bi_(2)Se_(3) SnS_(2)/Bi_(2)Te_(3) type-Ⅰheterostructure type-Ⅱheterostructure photoelectric response photodetector
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