Negligible normal fluid in superconducting state of heavily overdoped Bi_(2)Sr_(2)CaCu_(2)O_(8+δ) detected by ultra-low temperature angle-resolved photoemission spectroscopy

In high temperature cuprate superconductors,it was found that the superfluid density decreases with the increase of hole doping.One natural question is whether there exists normal fluid in the superconducting state in the overdoped region.In this paper,we have carried out high-resolution ultra-low temperature laser-based angle-resolved photoemission measurements on a heavily overdoped Bi2212 sample with a T_(c) of 48 K.We find that this heavily overdoped Bi2212 remains in the strong coupling regime with 2Δ_(0)/(k_(B)T_(c))=5.8.The single-particle scattering rate is very small along the nodal direction(~5 meV) and increases as the momentum moves from the nodal to the antinodal regions.A hard superconducting gap opening is observed near the antinodal region with the spectral weight at the Fermi level fully suppressed to zero.The normal fluid is found to be negligibly small in the superconducting state of this heavily overdoped Bi2212.These results provide key information to understand the high T_(c) mechanism in the cuprate superconductors.

Intrinsic electronic structure and nodeless superconducting gap of YBa_(2)Cu_(3)O_(7)-σ observed by spatially-resolved laser-based angle resolved photoemission spectroscopy

The spatially-resolved laser-based high-resolution angle resolved photoemission spectroscopy(ARPES) measurements have been performed on the optimally-doped YBa_(2)Cu_(3)O_(7)-σ(Y123) superconductor. For the first time, we found the region from the cleaved surface that reveals clear bulk electronic properties. The intrinsic Fermi surface and band structures of Y123 were observed. The Fermi surface-dependent and momentum-dependent superconducting gap was determined which is nodeless and consistent with the d+is gap form.

Flat band in hole-doped transition metal dichalcogenide observed by angle-resolved photoemission spectroscopy

Layered transition metal dichalcogenides(TMDCs)gained widespread attention because of their electron-correlationrelated physics,such as charge density wave(CDW),superconductivity,etc.In this paper,we report the high-resolution angle-resolved photoemission spectroscopy(ARPES)studies on the electronic structure of Ti-doped 1T-Ti_(x)Ta_(1-x)S_(2) with different doping levels.We observe a flat band that originates from the formation of the star of David super-cell at the x=5%sample at the low temperature.With the increasing Ti doping levels,the flat band vanishes in the x=8%sample due to the extra hole carrier.We also find the band shift and variation of the CDW gap caused by the Ti-doping.Meanwhile,the band folding positions and the CDW vector g_(CDW)intact.Our ARPES results suggest that the localized flat band and the correlation effect in the 1T-TMDCs could be tuned by changing the filling factor through the doping electron or hole carriers.The Ti-doped 1T-Ti_(x)Ta_(1-x)S_(2) provides a platform to fine-tune the electronic structure evolution and a new insight into the strongly correlated physics in the TMDC materials.

Angle-resolved photoemission study of NbGeSb with non-symmorphic symmetry

We investigate the electronic structure of NbGeSb with non-symmorphic symmetry.We employ angle-resolved photoemission spectroscopy(ARPES)to observe and identify the bulk and surface states over the Brillouin zone.By utilizing high-energy photons,we identify the bulk Fermi surface and bulk nodal line along the direction X–R,while the Fermi surface of the surface state is observed by using low-energy photons.We observe the splitting of surface bands away from the high-symmetry point X.The density functional theory calculations on bulk and 1 to 5-layer slab models,as well as spin textures of NbGeSb,verify that the band splitting could be attributed to the Rashba-like spin–orbit coupling caused by space-inversion-symmetry breaking at the surface.These splitted surface bands cross with each other,forming two-dimensional Weyl-like crossings that are protected by mirror symmetry.Our findings provide insights into the two-dimensional topological and symmetry-protected band inversion of surface states.

Optical manipulation of the topological phase in ZrTe_(5) revealed by time-and angle-resolved photoemission

High-resolution time-and angle-resolved photoemission measurements were conducted on the topological insulator ZrTe_(5).With strong femtosecond photoexcitation,a possible ultrafast phase transition from a weak to a strong topological insulating phase was experimentally realized by recovering the energy gap inversion in a time scale that was shorter than 0.15 ps.This photoinduced transient strong topological phase can last longer than 2 ps at the highest excitation fluence studied,and it cannot be attributed to the photoinduced heating of electrons or modification of the conduction band filling.Additionally,the measured unoccupied electronic states are consistent with the first-principles calculation based on experimental crystal lattice constants,which favor a strong topological insulating phase.These findings provide new insights into the longstanding controversy about the strong and weak topological properties in ZrTe_(5),and they suggest that many-body effects including electron–electron interactions must be taken into account to understand the equilibrium weak topological insulating phase in ZrTe_(5).

Angle-resolved photoemission spectroscopy study on iron-based superconductors

Angle-resolved photoemission spectroscopy （ARPES） has played an important role in determining the band structure and the superconducting gap structure of iron-based superconductors. In this paper, from the ARPES perspective, we briefly review the main results from our group in recent years on the iron-based superconductors and their parent compounds, and depict our current understanding on the antiferromagnetism and superconductivity in these materials.

Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy

Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride （PTCDA）/indium-tin-oxide （ITO） thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy. At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes （OLEDs）.

Common Electronic Features and Electronic Nematicity in Parent Compounds of Iron-Based Superconductors and FeSe/SrTiO_3 Films Revealed by Angle-Resolved Photoemission Spectroscopy

We report comprehensive angle-resolved photoemission investigations on the electronic structures and nematicity of the parent compounds of the iron-based superconductors including CeFeAsO, BaFe2As2, NaFeAs, FeSe and undoped FeSe/SrTiO3 films with 1, 2 and 20 layers. While the electronic structure near tile Brillouin zone center F varies dramatically among different materials, the electronic structure near the Brillouin zone corners （M points）, as well as their temperature dependence, are rather similar. The electronic structure near the zone corners is dominated by the electronic nematicity that gives rise to a band splitting of the dxz and dyz bands below the nematie transition temperature. A clear relation is observed between the band splitting magnitude arid the onset temperature of nematicity. Our results may shed light on the origin of nematicity, its effect on the electronic structures, and its relation with superconductivity in the iron-based superconductors.

Identification of Topological Surface State in PdTe2 Superconductor by Angle-Resolved Photoemission Spectroscopy

High-resolution angle-resolved photoemission measurements are carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7K. Combined with theoretical calculations, we discover for the first time the existence of topologically nontrivial surface state with Dirac cone in PbTe2 superconductor. It is located at the Brillouin zone center and possesses helical spin texture. Distinct from the usual three-dimensional topological insulators where the Dirac cone of the surface state lies at the Fermi level, the Dirac point of the surface state in PdTe2 lies deeply below the Fermi level at - 1.75 eV binding energy and is well separated from the bulk states. The identification of topological surface state in PdTe2 superconductor deeply below the Fermi level provides a unique system to explore new phenomena and properties and opens a door for finding new topological materials in transition metal ehalcogenides.

X-ray Photoemission Spectroscopy Studies of the Semiconducting Molybdenum Purple Bronze Bi_(0.2)MoO_3

The electronic structure of the quasi-two-dimensional （2D） semiconducting molybdenum purple bronze Bio.2MoO3 was presented by X-ray photoemission spectroscopy. The valence band of Bio.2MoO3 is made up of Opπ nonbonding level, π and a bonding bands. The peak at 1.5 eV and the shoulder at 0.5 eV in the forbidden band may be formed from the non-bonding dxy orbitals of some Mo atoms. The O1s core-level spectrum demonstrates the presence of two inequivalent bonds of oxygen ions in Bio.2MoO3. Bi4f core-level spectrum shows two bonding characters of Bi atoms in bismuth molybdenum single crystal. Mo3d core-level spectrum confirms two kinds of valence states of Molybdenum （Mo^＋5 and Mo^＋6）. Ar^＋ ion irradiation induces more significant distortion of MoO6 octahedra.

Detailed electronic structure of three-dimensional Fermi surface and its sensitivity to charge density wave transition in ZrTe3 revealed by high resolution laser-based angle-resolved photoemission spectroscopy

The detailed information of the electronic structure is the key to understanding the nature of charge density wave （CDW） order and its relationship with superconducting order in the microscopic level. In this paper, we present a high resolution laser-based angle-resolved photoemission spectroscopy （ARPES） study on the three-dimensional （3D） hole-like Fermi surface around the Brillouin zone center in a prototypical quasi-one-dimensional CDW and superconducting system ZrTe3. Double Fermi surface sheets are clearly resolved for the 3D hole-like Fermi surface around the zone center. The 3D Fermi surface shows a pronounced shrinking with increasing temperature. In particular, the quasiparticle scattering rate along the 3D Fermi surface experiences an anomaly near the charge density wave transition temperature of ZrTe3 - 63 K）. The signature of electron-phonon coupling is observed with a dispersion kink at -20 meV; the strength of the electron-phonon coupling around the 3D Fermi surface is rather weak. These results indicate that the 3D Fermi surface is also closely connected to the charge-density-wave transition and suggest a more global impact on the entire electronic structure induced by the CDW phase transition in ZrTe3.

Hybridization Effects Revealed by Angle-Resolved Photoemission Spectroscopy in Heavy-Fermion Ce2IrIn8

We utilize high-resolution resonant angle-resolved photoemission spectroscopy(ARPES)to study the band structure and hybridization effect of the heavy-fermion compound Ce2 IrIn8.We observe a nearly flat band at the binding energy of 7 meV below the coherent temperature Tcoh^40 K,which characterizes the electrical resistance maximum and indicates the onset temperature of hybridization.However,the Fermi vector and the Fermi surface volume have little change around Tcoh,which challenges the widely believed evolution from a hightemperature small Fermi surface to a low-temperature large Fermi surface.Our experimental results of the band structure fit well with the density functional theory plus dynamic mean-field theory calculations.

Growth of High-Quality Superconducting FeSe0.5Te0.5 Thin Films Suitable for Angle-Resolved Photoemission Spectroscopy Measurements via Pulsed Laser Deposition

High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on single- crystal substrates of Al2O3 （0001）, SrTiO3 （001）, and MgO （001）, as well as monitoring the real-time growth process on MgO substrates with reflection high energy electron diffraction, we find the appropriate parameters for epitaxial growth of high-quality FeSe0.5 Te0.5 thin films suitable for angle-resolved photoemission spectroscopy measurements. We further report the angle-resolved photoemission spectroscopy characterization of the super- conducting films. The clearly resolved Fermi surfaces and the band structure suggest a sample quality that is as good as that of high-quality single-crystals, demonstrating that the pulsed laser deposition method can serve as a promising technique for in situ preparation and manipulation of iron-based superconducting thin films, which may bring new prosperity to angle-resolved photoemission spectroscopy research on iron-based superconductors.

Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy

WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concen- tration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range,and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identify a fiat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a fiat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.

A state-of-the-art photoemission spectroscopy

CAS researchers have developed a VUV laser-based angle-resolved photoemission spectroscopy. making it possible to probe the electronic structure of materials at a sharper level.

Cu(111)衬底上单层铁电GeS薄膜的原子和电子结构研究

二维铁电材料因具有自发极化特性,在铁电场效应晶体管、非易失性存储器和传感器中具有广泛的技术和器件应用.特别是第Ⅳ主族单硫属化合物具有最高的理论预测热电特性和本征的面内铁电极化特性,适合作为探索二维铁电极化特性的模型材料.然而,由于相对大的解理能,目前不容易获得高质量和大尺寸单层第Ⅳ主族单硫属化合物,严重阻碍了这些材料应用到快速发展的二维材料及其异质结研究中.本文采用分子束外延方法在Cu(111)衬底上成功制备单层GeS.通过高分辨扫描隧道显微镜,原位X射线光电子能谱和角分辨光电子能谱以及密度泛函理论计算,对单层GeS原子晶格和电子能带结构进行了系统表征.研究结果表明:单层GeS具有正交晶格结构和近似平带的电子能带结构.单层GeS的成功制备和表征使得制备高质量和大尺寸单层第Ⅳ主族单硫属化合物成为可能,有利于该主族材料应用到快速发展的二维铁电材料以及异质结研究中.

Coexistence of Dirac and Weyl points in non-centrosymmetric semimetal NbIrTe_(4)

Using angle-resolved photoemission spectroscopy and density functional theory calculations methods,we investigate the electronic structures and topological properties of ternary tellurides NbIrTe_(4),a candidate for type-II Weyl semimetal.We demonstrate the presence of several Fermi arcs connecting their corresponding Weyl points on both termination surfaces of the topological material.Our analysis reveals the existence of Dirac points,in addition to Weyl points,giving both theoretical and experimental evidences of the coexistence of Dirac and Weyl points in a single material.These findings not only confirm NbIrTe_(4) as a unique topological semimetal but also open avenues for exploring novel electronic devices based on its coexisting Dirac and Weyl fermions.

Surface doping manipulation of the insulating ground states in Ta_(2)Pd_(3)Te_(5) and Ta_(2)Ni_(3)Te_(5)

Manipulating emergent quantum phenomena is a key issue for understanding the underlying physics and contributing to possible applications.Here we study the evolution of insulating ground states of Ta_(2)Pu_(3)Te_(5) and Ta_(2)Ni_(3)Te_(5) under in-situ surface potassium deposition via angle-resolved photoemission spectroscopy.Our results confirm the excitonic insulator character of Ta_(2)d_(3)Te_(5).Upon surface doping,the size of its global gap decreases obviously.After a deposition time of more than 7 min,the potassium atoms induce a metal-insulator phase transition and make the system recover to a normal state.In contrast,our results show that the isostructural compound Ta_(2)Ni_(3)Te_(5) is a conventional insulator.The size of its global gap decreases upon surface doping,but persists positive throughout the doping process.Our results not only confirm the excitonic origin of the band gap in Ta_(2)Pd_(3)Te_(5),but also offer an effective method for designing functional quantum devices in the future.

Manipulation of band gap in 1T-TiSe_(2) via rubidium deposition

The 1T-TiSe_(2) is a two-dimensional charge-density-wave(CDW)material that attracts great interest.A small band gap locates at the Fermi level separating the Ti d-bands and Se p-bands,which makes 1T-TiSe_(2) a promising candidate for realizing excitonic condensation.Here,we studied the band gap in 1T-TiSe_(2) using angle-resolved photoemission spectroscopy(ARPES).Instead of only focusing on the in-plane band dispersions,we obtained the detailed band dispersions of both conduction and valance bands along the out-of-plane direction.We found that the conduction and valance bands split into multiple sub-bands in the CDW state due to band folding.As a result,the band gap between the Ti d-bands and Se p-bands reduces to~25 meV and becomes a direct gap in the CDW state.More intriguingly,such band gap can be further reduced by the rubidium deposition.The band structure becomes semimetallic in the rubidium-doped sample.Meanwhile,exotic gapless behaviors were observed at the p-d band crossing.Our result characterized the band gap of 1T-TiSe_(2) in three-dimensional Brillouin zone with unpreceded precision.It also suggests a closing of band gap or a potential band inversion in 1T-TiSe_(2) driven by rubidium deposition.

SiBr_4及其不同离子态的电子结构研究——紫外光电子能谱(PES)和理论研究

本文详细报道了SiBr_4的紫外光电子能谱(PES)及该化合物不同离子态(X^2T_2,A^2T_1,B^2E,C^2T_2等)的电子结构和性质.实验测得对应基态离子态的绝热电离能I_a(X^2T_2←X^1A_1)=10.532eV,X^2T_2离子态的振动频率为(450±30)cm^(-1).结合理论计算对紫外光电子能谱进行了指认和分析,结果表明X^2T_2,A^1T_1两个离子态存在明显的自旋-轨道耦合作用,自旋-轨道耦合导致的分裂分别为:0.27eV和0.53eV.此外,不同计算方法比较显示外层格林函数方法计算得到电离能与实验吻合很好.