Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermedi...Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermediate range of Lsi between 1.9 nm-2.9 nm for samples with LGe fixed at 1.5 ml. In contrast to a pure-Ge/Si quantum well, the energy of the band shows red-shift as Lsi increases. Raman scattering shows that Si-Si vibration related Raman shift reaches a minimum for samples with strongest PL intensity of the abnormal band. It is therefore concluded that the abnormal band is related with strain relaxation process.展开更多
Raman and photoluminescence spectra of the metamict and annealing recrystallization titanoaeschynite-(Nd) and nioboaeschynite-(Ce), found in Baiyunobo mineral deposit in China, were measured and discussed. The peaks o...Raman and photoluminescence spectra of the metamict and annealing recrystallization titanoaeschynite-(Nd) and nioboaeschynite-(Ce), found in Baiyunobo mineral deposit in China, were measured and discussed. The peaks or bands in the spectra of the metamic minerals are weak, broad and diffuse, but sharpen notably after heating. The results show that the distortion of the structure and disorder state of the elements exists in the minerals when natural crystalline minerals transformed in-to metamict minerals after a long period of self-irradiation structure damaging. And all bands in the photoluminescence spectra of the aeschynite group mineral stem from emission transitions of Nd3+, when 514.5 nm laser is used as the excitation source.展开更多
Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman...Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence （PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E^g and Alg modes of WS2 and MoS2 vary linearly with tem- perature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band- gap shrinkage of bulk semiconductor.展开更多
A combined study examining the temperature dependencies of Raman scattering and photoluminescence(PL)of a YBa2 Cu3 O7(YBCO)matrix doped with SiO2(12 nm;0.01 wt%.,0.10 wt%)and Zn0.95Mn0.05O(20 nm;0.02 wt%,0.10 wt%)nano...A combined study examining the temperature dependencies of Raman scattering and photoluminescence(PL)of a YBa2 Cu3 O7(YBCO)matrix doped with SiO2(12 nm;0.01 wt%.,0.10 wt%)and Zn0.95Mn0.05O(20 nm;0.02 wt%,0.10 wt%)nanoparticles was presented.X-ray diffraction(XRD)analysis confirms that both YBCO types exhibit aperovskite structure with the orthorhombic Pmmm phase.The microstructure was examined using environmental scanning electron microscopy(ESEM).Raman scattering and photoluminescence measurements as functions of temperature were conducted in the 77-837 K range.The photoluminescence intensity is observed to decrease for the doped YBCO than for the pure YBCO,because of localized defects.The photoluminescence spectrum is primarily composed of three bands at 1.60,1.88,and 2.40 eV.A clearly pronounced correlation is observed between electronic and structural changes in the doped YBCO,which is due to the temperature,illumination,added oxygen or metal ions,and spectral parameters.The PL integrated intensity as a function of the inverse temperature was simulated using the Arrhenius model.This analysis reveals that the energy exchange between the different levels in the pure and doped YBCO was conducted via two vibration modes only,which are strongly linked to the oxygen and copper atoms in the YBCO matrix.The temperature dependencies of the modes at 340 and 500 cm-1 exhibit softening with temperature increase,resulting from microstructure control,which may be due to small concentrations of Si,Zn,and Mn substitutions at the chain Cu(1)and plane Cu(2)sites.展开更多
Two strong photoluminescence （PL） bands in the spectral range of 550\900 nm have been observed at room temperature from a series of a\|SiO\-\%x\%∶H films fabricated by plasma\|enhanced chemical vapor deposition （P...Two strong photoluminescence （PL） bands in the spectral range of 550\900 nm have been observed at room temperature from a series of a\|SiO\-\%x\%∶H films fabricated by plasma\|enhanced chemical vapor deposition （PECVD） technique. One is composed of a main band in the red\|light region and a shoulder; the other is located at about 850 nm, only found after 1170℃ annealing in N\-2 atmosphere. In conjunction with infrared （IR） and micro\|Raman spectra, it is thought that the two PL bands are associated with a\|Si clusters in the SiO\-\%x\% network and nanocrystalline silicon in SiO\-2, respectively.展开更多
文摘Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermediate range of Lsi between 1.9 nm-2.9 nm for samples with LGe fixed at 1.5 ml. In contrast to a pure-Ge/Si quantum well, the energy of the band shows red-shift as Lsi increases. Raman scattering shows that Si-Si vibration related Raman shift reaches a minimum for samples with strongest PL intensity of the abnormal band. It is therefore concluded that the abnormal band is related with strain relaxation process.
文摘Raman and photoluminescence spectra of the metamict and annealing recrystallization titanoaeschynite-(Nd) and nioboaeschynite-(Ce), found in Baiyunobo mineral deposit in China, were measured and discussed. The peaks or bands in the spectra of the metamic minerals are weak, broad and diffuse, but sharpen notably after heating. The results show that the distortion of the structure and disorder state of the elements exists in the minerals when natural crystalline minerals transformed in-to metamict minerals after a long period of self-irradiation structure damaging. And all bands in the photoluminescence spectra of the aeschynite group mineral stem from emission transitions of Nd3+, when 514.5 nm laser is used as the excitation source.
基金supported by the National Basic Research Program of China (2015CB932403)the National Natural Science Foundation of China (11674012, 61422501, 11374023, 11304054 and 61521004)+2 种基金Beijing Natural Science Foundation (L140007)Foundation for the Author of National Excellent Doctoral Dissertation of China (201420)National Program for Support of Top-notch Young Professionals
文摘Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence （PL） spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E^g and Alg modes of WS2 and MoS2 vary linearly with tem- perature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band- gap shrinkage of bulk semiconductor.
文摘A combined study examining the temperature dependencies of Raman scattering and photoluminescence(PL)of a YBa2 Cu3 O7(YBCO)matrix doped with SiO2(12 nm;0.01 wt%.,0.10 wt%)and Zn0.95Mn0.05O(20 nm;0.02 wt%,0.10 wt%)nanoparticles was presented.X-ray diffraction(XRD)analysis confirms that both YBCO types exhibit aperovskite structure with the orthorhombic Pmmm phase.The microstructure was examined using environmental scanning electron microscopy(ESEM).Raman scattering and photoluminescence measurements as functions of temperature were conducted in the 77-837 K range.The photoluminescence intensity is observed to decrease for the doped YBCO than for the pure YBCO,because of localized defects.The photoluminescence spectrum is primarily composed of three bands at 1.60,1.88,and 2.40 eV.A clearly pronounced correlation is observed between electronic and structural changes in the doped YBCO,which is due to the temperature,illumination,added oxygen or metal ions,and spectral parameters.The PL integrated intensity as a function of the inverse temperature was simulated using the Arrhenius model.This analysis reveals that the energy exchange between the different levels in the pure and doped YBCO was conducted via two vibration modes only,which are strongly linked to the oxygen and copper atoms in the YBCO matrix.The temperature dependencies of the modes at 340 and 500 cm-1 exhibit softening with temperature increase,resulting from microstructure control,which may be due to small concentrations of Si,Zn,and Mn substitutions at the chain Cu(1)and plane Cu(2)sites.
文摘Two strong photoluminescence （PL） bands in the spectral range of 550\900 nm have been observed at room temperature from a series of a\|SiO\-\%x\%∶H films fabricated by plasma\|enhanced chemical vapor deposition （PECVD） technique. One is composed of a main band in the red\|light region and a shoulder; the other is located at about 850 nm, only found after 1170℃ annealing in N\-2 atmosphere. In conjunction with infrared （IR） and micro\|Raman spectra, it is thought that the two PL bands are associated with a\|Si clusters in the SiO\-\%x\% network and nanocrystalline silicon in SiO\-2, respectively.
