High quality (AlGa)InP epilayers lattice matched on GaAs substrates were grown by atmospheric pressure metallorganic vapor phase epitaxy (AP-MOVPE).The relationship between surface morphologies and lattice mismatches ...High quality (AlGa)InP epilayers lattice matched on GaAs substrates were grown by atmospheric pressure metallorganic vapor phase epitaxy (AP-MOVPE).The relationship between surface morphologies and lattice mismatches was studied.The influence of Al incorporation to the photoluminescence and electronic properties of AlGaInP was measured.The applicability of growth at atmospheric pressure and the passivation of Zn in AlGaInP were discussed.展开更多
Eu-doped Ca-α-SiAlON yellow phosphors, with the compositions Ca0.72Eu0.08Si9.56Al2.44O0.84N15.16, were prepared by a highly efficient combustion synthesis method. By optimizing the starting compositions of reactants ...Eu-doped Ca-α-SiAlON yellow phosphors, with the compositions Ca0.72Eu0.08Si9.56Al2.44O0.84N15.16, were prepared by a highly efficient combustion synthesis method. By optimizing the starting compositions of reactants and choosing appropriate post-annealing conditions, phase-pure, uniform and fine Ca-α-sialon：Eu2＋ phosphors possessing the particle size ranging -3-5μm, and good luminescence properties with an intense emission band that peaks at 592 nm under n-UV or blue light excitation were ob-tained. The results indicated that combustion synthesis method was an energy efficient, time saving and low cost way to prepare Ca-α-SiAlON phosphors by controlling the mass ratio of comburents. A combination with post-annealing treatment was desired for further increase of the properties of Ca-α-SiAlON phosphors.展开更多
Oxonitridosilicate phosphors with compositions of Y 1-xCexSiO2N （x=0-0. 1） were synthesized by a new synthetic route based on a solid state reaction among YSi, CeSi, SiO2 and Y203 compounds at high temperature and h...Oxonitridosilicate phosphors with compositions of Y 1-xCexSiO2N （x=0-0. 1） were synthesized by a new synthetic route based on a solid state reaction among YSi, CeSi, SiO2 and Y203 compounds at high temperature and high pressure. The photohtminescence properties dependent on Ce concentration and temperature were investigated. Concentration quenching occurred when the doped Ce3＋ concentration was more than 3 tool.%. The emission spectra showed red shifts from 430 to 447 nm with the increased Ce concentration from 0.5 mol.% to 10 mol.%. The quenching temperature was estimated as ~380 K. The chromaticity coordinates of the excitation and emission spectra were stable against the temperature. This study showed these YSiO2N：Ce3＋ phosphors the potential applications in the three-RGB phosphor-converted white LEDs.展开更多
文摘High quality (AlGa)InP epilayers lattice matched on GaAs substrates were grown by atmospheric pressure metallorganic vapor phase epitaxy (AP-MOVPE).The relationship between surface morphologies and lattice mismatches was studied.The influence of Al incorporation to the photoluminescence and electronic properties of AlGaInP was measured.The applicability of growth at atmospheric pressure and the passivation of Zn in AlGaInP were discussed.
基金Project supported by the National Natural Science Foundation of China(51302311)the National High Technology Research and Development Program of China(2009AA03Z211)
文摘Eu-doped Ca-α-SiAlON yellow phosphors, with the compositions Ca0.72Eu0.08Si9.56Al2.44O0.84N15.16, were prepared by a highly efficient combustion synthesis method. By optimizing the starting compositions of reactants and choosing appropriate post-annealing conditions, phase-pure, uniform and fine Ca-α-sialon：Eu2＋ phosphors possessing the particle size ranging -3-5μm, and good luminescence properties with an intense emission band that peaks at 592 nm under n-UV or blue light excitation were ob-tained. The results indicated that combustion synthesis method was an energy efficient, time saving and low cost way to prepare Ca-α-SiAlON phosphors by controlling the mass ratio of comburents. A combination with post-annealing treatment was desired for further increase of the properties of Ca-α-SiAlON phosphors.
基金Project supported by National Natural Science Foundation of China (90922027, 51202053)National High Technology Research and Development Program of China (2009AA03Z432)Science and Technology Research Program of Hebei Education Department of China (Q2012061)
文摘Oxonitridosilicate phosphors with compositions of Y 1-xCexSiO2N （x=0-0. 1） were synthesized by a new synthetic route based on a solid state reaction among YSi, CeSi, SiO2 and Y203 compounds at high temperature and high pressure. The photohtminescence properties dependent on Ce concentration and temperature were investigated. Concentration quenching occurred when the doped Ce3＋ concentration was more than 3 tool.%. The emission spectra showed red shifts from 430 to 447 nm with the increased Ce concentration from 0.5 mol.% to 10 mol.%. The quenching temperature was estimated as ~380 K. The chromaticity coordinates of the excitation and emission spectra were stable against the temperature. This study showed these YSiO2N：Ce3＋ phosphors the potential applications in the three-RGB phosphor-converted white LEDs.
