Mechanism of Bragg Diffraction-Assisted Light Extraction in GaN-based Light-Emitting Diodes Based on a Self-Consistent Model

By introducing the distribution of the light energy density in GaN-based light-emitting diode (LED),theLED model based on the incoherent regime and the light extraction efficiency are investigated.The energy density asa function of the angle of incidence is calculated to demonstrate the mechanism of the light extraction.The deviationbetween the tendencies of the transmissivity of the output layer and the extraction efficiency is also demonstrated.

Large-scale SiO_2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

Wafer-scale SiO2 photonic crystal （PhC） patterns （SiO2 air-hole PhC, SiO2-pillar PhC） on indium tin oxide （ITO） layer of GaN-based light-emitting diode （LED） are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for expo- sure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2- pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.

Photonic crystal slabs in flexible organic light-emitting diodes

Photonic crystal slabs integrated into organic light-emitting diodes(OLEDs) allow for the extraction of waveguide modes and thus an increase in OLED efficiency. We fabricated linear Bragg gratings with a 460-nm period on flexible polycarbonate substrates using UV nanoimprint lithography. A hybrid organic–inorganic nanoimprint resist is used that serves also as a high refractive index layer. OLEDs composed of a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate(PEDOT:PSS) polymer anode, an organic emission layer [poly(p-phenylene vinylene)(PPV)-derivative 'Super Yellow'], and a metal cathode(Li F/Al) are deposited onto the flexible grating substrates. The effects of photonic crystal slab deformation in a flexible OLED are studied in theory and experiment. The substrate deformation is modeled using the finite-element method. The influence of the change in the grating period and the waveguide thickness under bending are investigated. The change in the grating period is found to be the dominant effect. At an emission angle of 20° a change in the resonance wavelength of 1.2% is predicted for a strain of 1.3% perpendicular to the grating grooves. This value is verified experimentally by analyzing electroluminescence and photoluminescence properties of the fabricated grating OLEDs.

Effects of the microstructure slab with pillars on light extraction of GaN light-emitting diode

The positive z direction relative light extraction efficiency of GaN light-emitting diodes with microstructure slab is calculated by three-dlmensional finite-difference time-domain method, where the microstructure slab consists of a graphite lattice of pillars. The results show that the two-dimensional graphite-arranged pillars suppress light extraction. When there is a thick pillar in the middle of the pillars, the structure can enhance light extraction of the light-emlttlng diodes. The tower-like pillars, which are thin on the top of the pillars and thick on the bottom of the pillars, benefit the light extraction when the angle of the tower-like pillars is proper.

Analysis of photonic crystal on LED extraction efficiency

Because of its very low light extraction efficiency(LEE),LED is limited to be widely used under the condition of the internal quantum efficiency which up to 90%.In order to fullfill the design of a more efficient GaN-based blue light LED,the model including deeply etched surface photonic crystals(PhCs)LED is discussed using mode analysis method from light waveguide theory.The distributions of all order modes in GaN layer are obtained by the effective index approximation.The light extraction efficiencies are also calculated by finite-difference time-domain method(FDTD).The emulated results fully coincide with the former analysis.Because the manufacture of the surface photonic crystal is feasible,the work can be very meaningful to design and manufacture the high efficiency GaN-based blue light LED in factory for a large amount.

光子晶体提高GaN基LED出光效率的研究进展

光子晶体作为有效提高LED出光效率的手段之一,在过去的十多年受到了广泛的关注。简述了光子晶体提高LED出光效率的物理原理。从GaN基LED不同光子晶体的结构、晶格常数和高度等参数的影响出发,通过几种新型光子晶体发光二级管的介绍,总结了近年来利用光子晶体提高LED出光效率所取得的研究进展。

高出光率GaN基光子晶体LED的研究进展

在LED上制作光子晶体结构将会提高LED的出光效率,这使得LED应用范围更广。主要从不同的光子晶体加工工艺出发,总结近年来GaN基光子晶体LED的研究进展,介绍新的工艺和实验结果。通过比较发现,利用光子晶体的光子禁带效应和光栅衍射原理,都能够提高LED的出光效率,但需要和光子晶体的结构参数以及相应的加工工艺相结合,使出光效率和光场能流密度有大幅度的提高,从而实现LED出光效率的提高,使LED取代白炽灯等光源应用于生活照明成为可能。

ITO窗口层光子晶体对GaN基LED性能的调控

与传统光源相比,基于GaN材料的发光二极管(LED)具有量子效率高、寿命长等优势,在通用照明、显示、医疗等领域中的应用份额稳步提升。然而受制于其材料特性与器件结构,GaN基LED在内量子效率与光提取效率方面仍有较大的提升空间。为解决以上关键问题,利用电子束曝光技术成功在GaN基LED表面的氧化铟锡(ITO)窗口层集成了光子晶体,并对光子晶体对于LED发光波长、电流-电压特性、发光强度等关键参数的调控进行了表征测量,结果表明,器件的法向电致发光强度提升了25%,器件的工作电压也有所降低。

一种发光二极管模型中无序光子晶体对光输出影响的研究(英文)

利用Order-N算法及超晶格技术讨论了位置无序及尺寸无序对石墨点阵柱状光子晶体光子带隙的影响·计算结果表明,对于电场偏振模,光子带隙对尺寸无序更加敏感·在此基础上,利用三维时域有限差分方法进一步讨论了无序光子晶体对石墨点阵柱状中心柱光子晶体GaN发光二极管模型光输出效率的影响·计算结果表明,无序对这种光子晶体发光二极管模型光输出效率的影响较小。