Spontaneous-emission control by local density of states of photonic crystal cavity

The local density of states （LDOS） of two-dimensional square lattice photonic crystal （PhC） defect cavity is studied. The results show that the LDOS in the centre is greatly reduced, while the LDOS at the point off the centre （for example, at the point （0.3a, 0.4a）, where a is the lattice constant） is extremely enhanced. Further, the disordered radii are introduced to imitate the real devices fabricated in our experiment, and then we study the LDOS of PhC cavity with configurations of different disordered radii. The results show that in the disordered cavity, the LDOS in the centre is still greatly reduced, while the LDOS at the point （0.3a, 0.4a） is still extremely enhanced. It shows that the LDOS analysis is useful. When a laser is designed on the basis of the square lattice PhC rod cavity, in order to enhance the spontaneous emission, the active materials should not be inserted in the centre of the cavity, but located at positions off the centre. So LDOS method gives a guide to design the positions of the active materials （quantum dots） in the lasers.

Characteristics of local photonic state density in an infinite two-dimensional photonic crystal

The local density of photonic states （LDPS） of an infinite two-dimensional （2D） photonic crystal （PC） composed of rotated square-pillars in a 2D square lattice is calculated in terms of the plane-wave expansion method in a combination with the point group theory. The calculation results show that the LDPS strongly depends on the spatial positions. The variations of the LDPS as functions of the radial coordinate and frequency exhibit “mountain chain” structures with sharp peaks. The LDPS with large value spans a finite area and falls abruptly down to small value at the position corresponding to the interfaces between two different refractive index materials. The larger/lower LDPS occurs inward the lower/larger dielectric-constant medium. This feature can be well interpreted by the continuity of electricdisplacement vector at the interface. In the frequency range of the pseudo-PBG （photonic band gap）, the LDPS keeps very low value over the whole Wiger-Seitz cell. It indicates that the spontaneous emission in 2D PCs cannot be prohibited completely, but it can be inhibited intensively when the resonate frequency falls into the pseudo-PBG.

Modification of spontaneous emission rate of micrometer-sized light sources using hollow-core photonic crystal fibers

We investigate numerically and experimentally the modification of the spontaneous emission rate for micrometersized light sources embedded in a hollow-core photonic crystal fiber （HCPCF）. The diameter of the light source is deliberately chosen such that they could be easily introduced into the central hole of the hollow-core photonic crystal fiber by capillary force. The photoluminescence from the microparticles is measured by using an inverted microscope in combination with a spectrometer. The modification of the spontaneous emission rate is observed in a wavelength region where there is no band gap. The experimental observations are consistent with the simulation results obtained by the plane wave expansion and finite-difference time-domain techniques.

准周期光子晶体的态密度

本文研究了准晶光子晶体的局域态密度和全态密度.结果表明,准晶光子晶体的局域态密度分布具有和准晶光子晶体完全相同的对称性,带隙内光子晶体中的态密度很小,不同的准晶光子晶体的局域态密度随介电材料的占空比的变化是不同的,这对构造准晶光子晶体是非常重要的.准晶光子晶体的全态密度所显示的带隙和透过率显示的带隙的一致性表明准晶光子晶体在某种程度上是各向同性的.

一维光子晶体带隙边缘处态密度突然增强现象的理论分析

针对一维光子晶体态密度(density of states,DOS)特性,建立数学计算模型,并就其带隙边缘突然增强现象,研究了近似局域最大值与周期数、薄膜材料折射率之间的对应关系。首先计算得到了特定周期数、相对折射率差下的近似局域最大值,接着绘制了DOS带隙特性曲线,验证了局域最大值的准确性。最后通过分析,进一步得到了周期数、相对折射率差对带隙边缘处DOS突然增强现象的调制关系。

圆柱形散射子二维光子晶体的态密度与局域态密度

二维光子晶体只有赝带隙,因此能否利用二维光子晶体有效控制原子自发辐射是令人感兴趣也是有实际意义的问题。其中最重要的因素是态密度和局域态密度的性质。采用平面波展开结合晶体群论的方法计算了二维正方格子光子晶体的态密度和局域态密度。其中散射子为空气圆柱,放置在均匀的电介质背景上。结果显示两个特点:第一,总态密度和局域态密度在原来二维光子晶体赝带隙处虽然已经不为零,但是取值明显低于赝带隙范围之外的值,即存在一个准光子带隙。第二,局域态密度在空气散射子界面处发生突变,空气散射子区域的局域态密度相对较大,这可由电位移矢量的连续性来理解。由于这两个特点在其他二维光子晶体中也被发现过,它们可能是普遍存在的。

局域态密度对表面等离激元特性影响的研究

表面等离激元是一种在金属与介质界面上激发并耦合电荷密度起伏的电磁振荡,具有近场增强和短波长等特性,在纳米光子学的研究中扮演重要角色.将表面等离激元的效应用于单元子源的制备,不但可以有效减小器件的体积,而且可以有效提高单光子的辐射和收集效率.本文根据表面等离激元的珀赛尔系数与光子态密度的关系,采用局域态密度计算的方法,分析了不同金属材料的局域态密度及珀赛尔系数的特性.通过计算比较,选择银为最佳金属材料,并在此基础上讨论了探测距离和电介质材料对局域态密度和珀赛尔系数的影响,为基于表面等离子激元的单光子源制备提供重要参数.

相干散射机制对微纳无序介质中光子局域态密度的影响研究

微纳无序介质中复杂的热辐射电磁波的多重散射现象,对光子局域态密度有着较大的影响,目前对该机制的研究尚较为欠缺。本文从数值计算和理论分析两方面入手,深入探究了微纳无序介质中的相干散射机制对其中光子局域态密度的影响。本文随机生成了硬球堆积结构,将散射体对电磁波的响应简化为偶极子,建立了耦合偶极子模型,对考虑多体散射的光子局域态密度进行严格求解。同时,本文基于准晶体近似,推导了考虑相干散射的光子局域态密度的理论计算公式,并与独立散射、Maxwell-Garnett等效介质理论进行了对比,结果表明,准晶体近似较为准确地考虑了随机介质中粒子排布的位置关联效应,从而对相干散射影响机制的估计更为准确。