A 2×3 Photonic Switch in SiGe for 1.55μm Operation

A silicon-based photonic switch is proposed and simulated based on the multimode interference （MMI） principle and the free-carrier plasma dispersion effect in silicon-germanium. The proposed switch, designed for 1.55μm window operation,is useful for DWDM optical networks. The switch consists of two input single-mode ridge waveguide ports,a MMI section, and three output single-mode ridge waveguide ports. In the MMI section, two index-modulation regions are placed to divert input optical signals from the two input ports to each of the three output ports. Switching characteristics are demonstrated theoretically by a beam propagation method for 1.55μm operation. The simulated results show that the insertion loss of the switch is less than 1.43dB, and the crosstalk is between - 18 and - 32.8dB.

Quantum Key Distribution without Signal Disturbance Monitoring

Researchers from the CAS Key Laboratory of Quantum Information,University of Science and Technology of China have just achieved a significant progress in quantum key distribution research.Based on the self-developed active switching technology,they successfully conducted the world's longest-more than 90km-round-robin differential phase shift(RRDPS)quantum key distribution experiment.

Photonic Packet Switching Based on Optical Label Processing

We express a photonic packet switch prototype based on optical label processing methods which dramatically increase the label processing capability. We experimentally demonstrate 40Gbit/s/port packet switching and optical buffering capabilities of the prototype.

ATM Optical Switching Technology

2.5 Gbit/s ATM optical switching experimental system has been achieved for the first time in P.R.China.This poper describes the architecture of the ATM optical switching system.and gives some key technologies forrealization,e.g. photonic switching matrix, header identification, etc. In addition, the performance, analysis andexperimental results are given.

Compact, submilliwatt, 2 × 2 silicon thermo-optic switch based on photonic crystal nanobeam cavities

We propose and experimentally demonstrate a 2×2 thermo-optic(TO) crossbar switch implemented by dual photonic crystal nanobeam(PCN)cavities within a silicon-on-insulator(SOI)platform.By thermally tuning the refractive index of silicon,the resonance wavelength of the PCN cavities can be red-shifted.With the help of the ultrasmall mode volumes of the PCN cavities,only～0.16 mW power is needed to change the switching state.With a spectral passband of 0.09 nm at the 1583.75 nm operation wavelength,the insertion loss(IL)and crosstalk(CT)performances were measured as IL(bar)=-0.2 dB,CT(bar)=-15 dB,IL(cross)=-1.5 dB,and CT(cross)=-15 dB.Furthermore,the thermal tuning efficiency of the fabricated device is as high as1.23 nm/mW.

PMMA-doped CdSe quantum dots as saturable absorber in a Q-switched all-fiber laser

We demonstrate the generation of Q-switched pulses from an ytterbium-doped fiber laser（YDFL） using quantum dot（QD） CdSe as a passive saturable absorber（SA）. The CdSe QD is fabricated by the synthesis of CdO,Se, and manganese acetate and paraffin oil and oleic acid as the solvent and surfactant, respectively. The CdSe QD is then doped into poly-methyl-methacrylate（PMMA） via an emulsion polymerization process. A PMMAhosted CdSe QD thin flake with a homogeneous end surface is then formed and placed between two ferrules and assembled in a YDFL cavity to achieve the Q-switching operation with a repetition rate of 24.45 to 40.50 kHz while varying the pump power from 975 to 1196 mW. The pulse width changes from 6.78 to 3.65 μs with a maximum calculated pulse energy at 0.77 μJ at a pump power of 1101 mW. This work may be the first demonstration of CdSe QD-based Q-switching in an all-fiber configuration that should give proportional insight into semiconductor QD materials in photonics applications.

Switchable optical nonlinear properties of W_(18)O_(49) nanowires by Ag nanoparticles supported

During the past decades,nonlinear optical（NLO）materials have attracted special interest because of their potential applications in photonic devices,such as optical switching,frequency conversion and electro-optic modulators.Among the finding ways to obtain excellent NLO materials with both large NLO response and short response time,