Three samples of GaAs/A1As multiple-quantum wells with different quantum well widths and tS-doped with Be ac- ceptors at the well center were grown on （100） GaAs substrates by molecular beam epitaxy. Polarized Raman...Three samples of GaAs/A1As multiple-quantum wells with different quantum well widths and tS-doped with Be ac- ceptors at the well center were grown on （100） GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three samples at temperatures in a range of 4-50 K in a backscattering configuration. The two branches of coupled modes due to the interaction of the hole intersubband transitions and the quantum-well longitudinal optical （LO） phonon were observed clearly. The evaluation formalism of the Green function was employed and each lineshape of the Raman spectrum of the coupled modes was simulated. The dependence of the peak position of Raman shifts of the two coupled modes as well as the quantum-well LO phonon on the quantum-well size and measured temperature were given, and the coupling interaction mechanism between the hole subband transitions and the quantum-well LO phonon was researched.展开更多
The dissolving potential of anode, the flatband potential, the open-circuit photovolt-age and the spectrum-response of ZnSe/GaAs/ aqueous electrolyte system have been investigated.This kind of composite semiconductor ...The dissolving potential of anode, the flatband potential, the open-circuit photovolt-age and the spectrum-response of ZnSe/GaAs/ aqueous electrolyte system have been investigated.This kind of composite semiconductor photoelectrode is enable to raise the efficiency of solar en-ergy convrsion.展开更多
基金Project supported by Shandong Province Natural Science Foundation,China(Grant No.ZR2017MF018)the National Natural Science Foundation of China(Grant No.61675223)
文摘Three samples of GaAs/A1As multiple-quantum wells with different quantum well widths and tS-doped with Be ac- ceptors at the well center were grown on （100） GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three samples at temperatures in a range of 4-50 K in a backscattering configuration. The two branches of coupled modes due to the interaction of the hole intersubband transitions and the quantum-well longitudinal optical （LO） phonon were observed clearly. The evaluation formalism of the Green function was employed and each lineshape of the Raman spectrum of the coupled modes was simulated. The dependence of the peak position of Raman shifts of the two coupled modes as well as the quantum-well LO phonon on the quantum-well size and measured temperature were given, and the coupling interaction mechanism between the hole subband transitions and the quantum-well LO phonon was researched.
文摘The dissolving potential of anode, the flatband potential, the open-circuit photovolt-age and the spectrum-response of ZnSe/GaAs/ aqueous electrolyte system have been investigated.This kind of composite semiconductor photoelectrode is enable to raise the efficiency of solar en-ergy convrsion.
