Behavior Mechanism on Sulfide Solid-Liquid Interface and Its Application

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Surface Wave Analysis of Planar-Type Overdense Plasma with Surface Plasmon Polariton Resonance

Surface waves （SWs） in planar-type overdense plasmas are analyzed and the invariable SW mode caused by the resonant excitation of surface plasmon polaritons （SPPs） is presented. It is found that the electric field peaks at the location where the plasma density equals the cut-off density while the plasma density gradient and the collision rate have different influences on the field amplitude and the peak＇s width. Moreover, the mode conversion between SW of SPPs and electron plasma waves play a significant role in production of overdense plasma.

Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum （Mo） as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm^- 1.

Fabrication and Characterization of Multi-layer Heat Mirror with Photocatalytic Properties

A novel TiO2（5）/TiO2（buffer）/Ti（4）/Ag（3）/Ti（2）/TiO2（1） multi-layer film coating with corning glass is designed and fabricated by a dc magnetron sputtering method as a renovation of the well-known TiO2/Ti/Ag/Ti/TiO2 system in order to obtain a heat mirror system with photocatalytic properties due to sufficient thickness of the Ti02 layer. The outer TiO2 layer is fabricated in two steps, possibly claimed as two layers TiO2（5） and TiO2（buuer）, among which TiO2（buffer） the 70-nm-thick layer deposited in poor oxygen effectively minimizes the oxidation toward its neighbor Ti（4） layer. The optimal total thickness of the TiO2（5） and TiO（buffer） di-layer is found to be 300nm to yield a highly photo-catalytic property of the film without affecting the optical properties considerably. This multi-layer film can transmit light of above 75-85% in the visible spectrum （380 ≤ λ≤ 760 nm） and reflect radiation of above 90% in the infrared spectrum （ λ≥760 nm）. Such multi-layer coatings are strongly recommended not only as promising transparent heat mirrors but also as photo-catalytic films for architectural window coatings.

CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures

The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 （CIS） films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu（In,Ga）Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.

Interaction between B-Doped C60 Fullerene and Glycine Amino Acid from First-Principles Simulation

The possibility of formation of complexes between glycine and boron doped C60 （C59B） fullerene is investigated and compared with that of C60 fullerene by using the density functional theory calculations. It has been found that the binding of glycine to C59B generated the most stable complexes via its carbonyl oxygen active site, with a binding energy of-37.89 kcal/mol, while the glycine molecule prefers to bind to the pure C60 cage via its amino nitrogen active site, consistent with the recent experimental and theoretical studies. We have also tested the stability of the most stable Gly-C59B complex with ab initio molecular dynamics simulation, carried out at room temperature. These indicate that the B-doped C60 fullerenes seem to be more suitable materials for bindings to proteins than pure C60 fullerenes.

Comparative Study on Polarization of DNA and CdSe Quantum Dots

The polarizabilities of DNA in transverse direction and CdSe semiconductor quantum dots （QDs） deposited on mica surface are compared by means of electrostatic force microscopy （EFM）. We observe clear EFM-phase shift over CdSe QDs, while no obvious signal on DNA is detected, suggesting that DNA molecules is an electrical insulator.

A DOMINANT DEFECT AT THE Si/SiO_2 INTERFACE IN MOS STRUCTURE

The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.