The experiment results indicate that the gauge factor of highly boron doped polysilicon nanofilm is bigger than that of monocrystalline silicon with the same doping concentration, and increases with the grain size dec...The experiment results indicate that the gauge factor of highly boron doped polysilicon nanofilm is bigger than that of monocrystalline silicon with the same doping concentration, and increases with the grain size decreasing. To apply the unique properties reasonably in the fabrication of piezoresistive devices, it was expounded based on the analysis of energy band structure that the properties were caused by the tunnel current which varies with the strain change forming a tunnelling piezoresistive effect. Finally, a calculation method ofpiezoresistance coefficients around grain boundaries was presented, and then the experiment results ofpolysilicon nanofilms were explained theoretically.展开更多
In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole con- duct...In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole con- duction mass by stress, a novel algorithm for the piezoresistance coefficients of p-type polysilicon is presented. It proposes three fundamental piezoresistance coefficients π11,π12 and π44 of the grain neutral and grain boundary regions, separately. With those piezoresistance coefficients, the gauge factors of the p-type polysilicon nanofilm and the p-type common polysilicon film are calculated, and then the plots of the gauge factor as a function of doping concentration are given, which are consistent with the experimental results.展开更多
基金supported by the National Natural Science Foundation of China(No.60776049)the Science and Technology Foundation of Liaoning Province ofChina(No.20072036)the Fund ofLiaoning Province Education Department of China(No.2007T130).
文摘The experiment results indicate that the gauge factor of highly boron doped polysilicon nanofilm is bigger than that of monocrystalline silicon with the same doping concentration, and increases with the grain size decreasing. To apply the unique properties reasonably in the fabrication of piezoresistive devices, it was expounded based on the analysis of energy band structure that the properties were caused by the tunnel current which varies with the strain change forming a tunnelling piezoresistive effect. Finally, a calculation method ofpiezoresistance coefficients around grain boundaries was presented, and then the experiment results ofpolysilicon nanofilms were explained theoretically.
基金supported by the National Natural Science Foundation of China(No.61372019)
文摘In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole con- duction mass by stress, a novel algorithm for the piezoresistance coefficients of p-type polysilicon is presented. It proposes three fundamental piezoresistance coefficients π11,π12 and π44 of the grain neutral and grain boundary regions, separately. With those piezoresistance coefficients, the gauge factors of the p-type polysilicon nanofilm and the p-type common polysilicon film are calculated, and then the plots of the gauge factor as a function of doping concentration are given, which are consistent with the experimental results.
