measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes(RTDs).The current-voltage characteristic shifts of RTD at different stress states were detected.The ex...measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes(RTDs).The current-voltage characteristic shifts of RTD at different stress states were detected.The experimental results demonstrate that the piezoresistive sensitivity of RTD is larger than 1x10−8 Pa−1.To accurately represent the piezoresistive properties of RTD,the current-voltage characteristic coherence of the same RTD was tested.According to the experimental results,the largest relative resistance shift of an RTD in the same measurement environment is less than 3%,of which 1%is caused by the testing apparatuses.展开更多
Based on the trap model, the band structure and the conductive mechanism ofpolysilicon were analyzed, and then an equivalent circuit used to interpret the tunneling piezoresistive effect was proposed. Synthesizing the...Based on the trap model, the band structure and the conductive mechanism ofpolysilicon were analyzed, and then an equivalent circuit used to interpret the tunneling piezoresistive effect was proposed. Synthesizing the piezoresistive effect of the grain boundary region and grain neutral zone, a new piezoresistive model--a tunneling piezoresistive model is established. The results show that when the doping concentration is above 10^20 cm^-3, the piezoresistive coefficient of the grain boundary is higher than that of the neutral zone, and it increases with an increase in doping concentration. This reveals the intrinsic mechanism of an important experimental phenomena that the gauge factor of heavily doped polysilicon nano-films increases with an increase in doping concentration.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.50405025 and 50375050)the Fork Ying Tung Education Foundation(No.101052).
文摘measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes(RTDs).The current-voltage characteristic shifts of RTD at different stress states were detected.The experimental results demonstrate that the piezoresistive sensitivity of RTD is larger than 1x10−8 Pa−1.To accurately represent the piezoresistive properties of RTD,the current-voltage characteristic coherence of the same RTD was tested.According to the experimental results,the largest relative resistance shift of an RTD in the same measurement environment is less than 3%,of which 1%is caused by the testing apparatuses.
基金supported by the National Natural Science Foundation of China(No.60776049)the Science and Technology Foundation of Liaoning Province(No.20072036)the Fund of Liaoning Province Education Department(No.2007T130)
文摘Based on the trap model, the band structure and the conductive mechanism ofpolysilicon were analyzed, and then an equivalent circuit used to interpret the tunneling piezoresistive effect was proposed. Synthesizing the piezoresistive effect of the grain boundary region and grain neutral zone, a new piezoresistive model--a tunneling piezoresistive model is established. The results show that when the doping concentration is above 10^20 cm^-3, the piezoresistive coefficient of the grain boundary is higher than that of the neutral zone, and it increases with an increase in doping concentration. This reveals the intrinsic mechanism of an important experimental phenomena that the gauge factor of heavily doped polysilicon nano-films increases with an increase in doping concentration.
