We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three...We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.展开更多
Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths fo...Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the fiat quantum wells. As the barrier thickness of the fiat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.展开更多
The space effects of oval-shaped furrow pit slopes were analyzed by the elastic mechanics principle.The interaction of limit equilibrium slope angle,friction coefficient,cohesion and horizontal radius of oval-shaped f...The space effects of oval-shaped furrow pit slopes were analyzed by the elastic mechanics principle.The interaction of limit equilibrium slope angle,friction coefficient,cohesion and horizontal radius of oval-shaped furrow pits has been derived.The oval trumpet-like rock mass is homogeneous and elastic while only loaded by its dead weight.The interaction indicates that the deeper an oval-shaped furrow pit is excavated,the greater the limit equilibrium slope angle.Both the theory base for reducing stripping waste rock in an oval-shaped furrow pit and the basic way to determine the configuration of a stable slope were developed from the mentioned interaction.The theory includes the preceding principles of stability analysis of slopes.Compared with the configuration determined by traditional theory of slope stability,a great quantity of stripping waste rock can be reduced by that determined in this paper under stable conditions.展开更多
Electrochemical test technology and surface analysis method were employed to investigate the pitting corrosion of Cu-Zn-AI shape memory alloy in simulated uterine fluid. The results showed that the breakage of the bre...Electrochemical test technology and surface analysis method were employed to investigate the pitting corrosion of Cu-Zn-AI shape memory alloy in simulated uterine fluid. The results showed that the breakage of the breaking-renovating equilibrium of surface layers resulted in the pitting corrosion of Cu-Zn-AI shape memory alloy in simulated uterine fluid. The development of pitting corrosion was controlled by dissolution of surface layers. The critical pitting corrosion potential was 1.70 VSCE. The kinetics equation for the development of pitting corrosion for Cu-Zn-AI shape memory alloy in simulated uterine fluid was io=465.68 t-0.5+1.5. Pitting appearances of pits could be two types: tortoise-shell, and anomaly abscess. Cl- ion facilitated the pitting corrosion of Cu-Zn-AI shape memory alloy by competing adsorption and concentrating on alloy surface at high positive potential.展开更多
基金supported by the Natural Science Foundation of Fujian Province,China(Grant No.2012J01280)
文摘We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61564007 and 11364034)the Sci-Tech Support Plan of Jiangxi Province,China(Grant No.20141BBE50035)
文摘Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the fiat quantum wells. As the barrier thickness of the fiat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.
文摘The space effects of oval-shaped furrow pit slopes were analyzed by the elastic mechanics principle.The interaction of limit equilibrium slope angle,friction coefficient,cohesion and horizontal radius of oval-shaped furrow pits has been derived.The oval trumpet-like rock mass is homogeneous and elastic while only loaded by its dead weight.The interaction indicates that the deeper an oval-shaped furrow pit is excavated,the greater the limit equilibrium slope angle.Both the theory base for reducing stripping waste rock in an oval-shaped furrow pit and the basic way to determine the configuration of a stable slope were developed from the mentioned interaction.The theory includes the preceding principles of stability analysis of slopes.Compared with the configuration determined by traditional theory of slope stability,a great quantity of stripping waste rock can be reduced by that determined in this paper under stable conditions.
文摘Electrochemical test technology and surface analysis method were employed to investigate the pitting corrosion of Cu-Zn-AI shape memory alloy in simulated uterine fluid. The results showed that the breakage of the breaking-renovating equilibrium of surface layers resulted in the pitting corrosion of Cu-Zn-AI shape memory alloy in simulated uterine fluid. The development of pitting corrosion was controlled by dissolution of surface layers. The critical pitting corrosion potential was 1.70 VSCE. The kinetics equation for the development of pitting corrosion for Cu-Zn-AI shape memory alloy in simulated uterine fluid was io=465.68 t-0.5+1.5. Pitting appearances of pits could be two types: tortoise-shell, and anomaly abscess. Cl- ion facilitated the pitting corrosion of Cu-Zn-AI shape memory alloy by competing adsorption and concentrating on alloy surface at high positive potential.
