The planar Hall effect(PHE),which originates from anisotropic magnetoresistance,presents a qualitative and simple approach to characterize electronic structures of quantum materials by applying an in-plane rotating ma...The planar Hall effect(PHE),which originates from anisotropic magnetoresistance,presents a qualitative and simple approach to characterize electronic structures of quantum materials by applying an in-plane rotating magnetic field to induce identical oscillations in both longitudinal and transverse resistances.In this review,we focus on the recent research on the PHE in various quantum materials,including ferromagnetic materials,topological insulators,Weyl semimetals,and orbital anisotropic matters.Firstly,we briefly introduce the family of Hall effect and give a basic deduction of PHE formula with the second-order resistance tensor,showing the mechanism of the characteristicπ-period oscillation in trigonometric function form with aπ/4 phase delay between the longitudinal and transverse resistances.Then,we will introduce the four main mechanisms to realize PHE in quantum materials.After that,the origin of the anomalous planar Hall effect(APHE)results,of which the curve shapes deviate from that of PHE,will be reviewed and discussed.Finally,the challenges and prospects for this field of study are discussed.展开更多
A planar Hall effect（PHE） is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si（001） substrate.Owing to the domain structure of iron film and the characteris...A planar Hall effect（PHE） is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si（001） substrate.Owing to the domain structure of iron film and the characteristics of PHE,the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180°domain wall displacement near the easy axis,respectively.However,the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently.The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement.Furthermore,the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.展开更多
We report a tunable transverse magnetoresistance of the planar Hall effect(PHE),up to 48%in the Ni80Fe20/HfO2 heterostructures.This control is achieved by applying a gate voltage with an ionic liquid technique at ultr...We report a tunable transverse magnetoresistance of the planar Hall effect(PHE),up to 48%in the Ni80Fe20/HfO2 heterostructures.This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage,which exhibits a gate-dependent PHE.Moreover,in the range of 0-V to 1-V gate voltage,transverse magnetoresistance of PHE can be continuously regulated.Ferromagnetic resonance(FMR)also demonstrates the shift of the resonance field at low gate voltage.This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.展开更多
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or...The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect(APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO_(2) and IrO_(2) single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.展开更多
Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared...Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferromagnetic(FM)system.It can persist to the temperatures above AF transition and exhibit strong angular field dependence.The phase diagram reveals various magnetic states by rotating the applied field.By analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line.The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations.These behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological origin.Our results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices.展开更多
平面霍尔效应(planar Hall effect,PHE)是当前凝聚态输运中研究的热点之一.近年来,平面霍尔效应,尤其是拓扑材料中的平面霍尔效应,引起了人们的广泛关注和研究,并取得了很大的进展.不同于普通霍尔效应,平面霍尔效应中的横向电流、磁场...平面霍尔效应(planar Hall effect,PHE)是当前凝聚态输运中研究的热点之一.近年来,平面霍尔效应,尤其是拓扑材料中的平面霍尔效应,引起了人们的广泛关注和研究,并取得了很大的进展.不同于普通霍尔效应,平面霍尔效应中的横向电流、磁场和电场可以出现在同一平面,无法用洛伦兹力解释,其很大程度上依赖于磁电阻的各向异性.本文从理论和实验两个角度介绍拓扑材料中平面霍尔效应的研究进展,深入分析了导致线性和非线性平面霍尔效应的各种外禀和内禀机制,并讨论尚待解决的相关问题和未来的发展方向.展开更多
The current-induced spin-orbit torque(SOT)plays a dominant role to manipulate the magnetization in a heavy metal/ferromagnetic metal bilayer.We separate the contributions of interfacial and bulk spin-orbit coupling(SO...The current-induced spin-orbit torque(SOT)plays a dominant role to manipulate the magnetization in a heavy metal/ferromagnetic metal bilayer.We separate the contributions of interfacial and bulk spin-orbit coupling(SOC)to the effective field of field-like SOT in a typical NiFe/Pt bilayer by planar Hall effect(PHE).The effective field from interfacial SOC is directly measured at the transverse PHE configuration.Then,at the longitudinal configuration,the effective field from bulk SOC is determined,which is much smaller than that from interfacial SOC.The giant interface SOT in NiFe/Pt bilayers suggests that further analysis of interfacial effects on the current-induced manipulation of magnetization is necessary.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.11904015)the Fundamental Research Funds for the Central Universities(Grant No.YWF-22-K-101)the National Key R&D Program of China(Grant No.2018YFE0202700)。
文摘The planar Hall effect(PHE),which originates from anisotropic magnetoresistance,presents a qualitative and simple approach to characterize electronic structures of quantum materials by applying an in-plane rotating magnetic field to induce identical oscillations in both longitudinal and transverse resistances.In this review,we focus on the recent research on the PHE in various quantum materials,including ferromagnetic materials,topological insulators,Weyl semimetals,and orbital anisotropic matters.Firstly,we briefly introduce the family of Hall effect and give a basic deduction of PHE formula with the second-order resistance tensor,showing the mechanism of the characteristicπ-period oscillation in trigonometric function form with aπ/4 phase delay between the longitudinal and transverse resistances.Then,we will introduce the four main mechanisms to realize PHE in quantum materials.After that,the origin of the anomalous planar Hall effect(APHE)results,of which the curve shapes deviate from that of PHE,will be reviewed and discussed.Finally,the challenges and prospects for this field of study are discussed.
基金supported by the National Basic Research Program of China(Grant Nos.2011CB921801 and 2012CB933102)the National Natural Science Foundation of China(Grant Nos.11374350,11034004,11274361,11274033,11474015,and 61227902)the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20131102130005)
文摘A planar Hall effect（PHE） is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si（001） substrate.Owing to the domain structure of iron film and the characteristics of PHE,the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180°domain wall displacement near the easy axis,respectively.However,the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently.The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement.Furthermore,the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51671099 and 11974149)the Open Foundation Project of Jiangsu Key Laboratory of Thin Films(Grant No.KJS1745)+1 种基金the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT16R35)the Fundamental Research Funds for the Central Universities,China.
文摘We report a tunable transverse magnetoresistance of the planar Hall effect(PHE),up to 48%in the Ni80Fe20/HfO2 heterostructures.This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage,which exhibits a gate-dependent PHE.Moreover,in the range of 0-V to 1-V gate voltage,transverse magnetoresistance of PHE can be continuously regulated.Ferromagnetic resonance(FMR)also demonstrates the shift of the resonance field at low gate voltage.This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.
基金supported by the National Key Research and Development Program of China (2022YFA1403300)the National Natural Science Foundation of China (11974079, 12274083, 12221004, 12174028, 52231007, 51725101, and 11727807)+2 种基金the Shanghai Municipal Science and Technology Major Project (2019SHZDZX01)the Shanghai Municipal Science and Technology Basic Research Project (22JC1400200 and 23dz2260100)the National Key Research and Development Program of China (2021YFA1200600 and 2018YFA0209100)。
文摘The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect(APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO_(2) and IrO_(2) single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.
基金Project supported by the open research fund of Songshan Lake Materials Laboratory(Grant No.2021SLABFN11)the National Natural Science Foundation of China(Grant Nos.U2130101 and 92165204)+5 种基金Natural Science Foundation of Guangdong Province(Grant No.2022A1515010035)Guangzhou Basic and Applied Basic Research Foundation(Grant No.202201011798)the Open Project of Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(Grant No.2022B1212010008)the Open Project of Key Laboratory of Optoelectronic Materials and Technologies(Grant No.OEMT-2023-ZTS-01)the National Key R&D Program of China(Grant Nos.2023YFF0718400 and 2023YFA1406500)(national)college students innovation and entrepreneurship training program,Sun Yat-sen University(Grant No.202310359).
文摘Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferromagnetic(FM)system.It can persist to the temperatures above AF transition and exhibit strong angular field dependence.The phase diagram reveals various magnetic states by rotating the applied field.By analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line.The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations.These behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological origin.Our results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices.
文摘平面霍尔效应(planar Hall effect,PHE)是当前凝聚态输运中研究的热点之一.近年来,平面霍尔效应,尤其是拓扑材料中的平面霍尔效应,引起了人们的广泛关注和研究,并取得了很大的进展.不同于普通霍尔效应,平面霍尔效应中的横向电流、磁场和电场可以出现在同一平面,无法用洛伦兹力解释,其很大程度上依赖于磁电阻的各向异性.本文从理论和实验两个角度介绍拓扑材料中平面霍尔效应的研究进展,深入分析了导致线性和非线性平面霍尔效应的各种外禀和内禀机制,并讨论尚待解决的相关问题和未来的发展方向.
基金the National Natural Science Foundation of China(Grant No.11574375).
文摘The current-induced spin-orbit torque(SOT)plays a dominant role to manipulate the magnetization in a heavy metal/ferromagnetic metal bilayer.We separate the contributions of interfacial and bulk spin-orbit coupling(SOC)to the effective field of field-like SOT in a typical NiFe/Pt bilayer by planar Hall effect(PHE).The effective field from interfacial SOC is directly measured at the transverse PHE configuration.Then,at the longitudinal configuration,the effective field from bulk SOC is determined,which is much smaller than that from interfacial SOC.The giant interface SOT in NiFe/Pt bilayers suggests that further analysis of interfacial effects on the current-induced manipulation of magnetization is necessary.
