Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-ga...Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-gate type static induction transistor by conventional planar process technology is presented.Using this structure,it is successfully avoided the second epitaxy with a high degree of difficulty and the complicated mesa process in conventional buried gate.The experimental results demonstrate that this structure is desirable for application in power SIDs.Its advantages are high breakdown voltage and blocking gain.展开更多
By using transfer matrix,the lower-order natural frequencies of the Watt type planar six-barlinkage are calculated in this paper.The experiment of the modal analysis is done with the SignalProcessor 7T17S,and the expe...By using transfer matrix,the lower-order natural frequencies of the Watt type planar six-barlinkage are calculated in this paper.The experiment of the modal analysis is done with the SignalProcessor 7T17S,and the experiment results agree with the calculated ones.This method only re-quires calculation of lower-order transfer matrix and determinant values,so that, it can be done ona minicomputer such as IBM/PC.The method adopted in this paper is also suitable for vibrationanalysis of other types of linkages.展开更多
对平面梯形结构多间隙谐振腔的模式分布、特性阻抗、耦合系数以及工作稳定性进行了研究.在此基础上给出了W波段高峰值功率扩展互作用速调管高频互作用系统设计,并采用三维粒子模拟(PIC)技术对电子的速度调制、群聚及其与高频场的相互作...对平面梯形结构多间隙谐振腔的模式分布、特性阻抗、耦合系数以及工作稳定性进行了研究.在此基础上给出了W波段高峰值功率扩展互作用速调管高频互作用系统设计,并采用三维粒子模拟(PIC)技术对电子的速度调制、群聚及其与高频场的相互作用和能量转换等物理过程进行了研究,定量给出了放大器的功率、带宽、效率以及增益等关键技术指标.PIC结果显示:在中心频率94.52 GHz以及电压16 k V、电流0.6 A的电子注参数下,最大输出功率达到1.8 k W,相应的增益和电子效率分别为47.7 d B和19.4%;扫频结果显示瞬时3 d B带宽为210 MHz.展开更多
To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard...To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. The laser-beam-induced-current （LBIC） technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be effectively suppressed, and the detector photo-sensitive area could be exactly defined.展开更多
文摘Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-gate type static induction transistor by conventional planar process technology is presented.Using this structure,it is successfully avoided the second epitaxy with a high degree of difficulty and the complicated mesa process in conventional buried gate.The experimental results demonstrate that this structure is desirable for application in power SIDs.Its advantages are high breakdown voltage and blocking gain.
文摘By using transfer matrix,the lower-order natural frequencies of the Watt type planar six-barlinkage are calculated in this paper.The experiment of the modal analysis is done with the SignalProcessor 7T17S,and the experiment results agree with the calculated ones.This method only re-quires calculation of lower-order transfer matrix and determinant values,so that, it can be done ona minicomputer such as IBM/PC.The method adopted in this paper is also suitable for vibrationanalysis of other types of linkages.
文摘对平面梯形结构多间隙谐振腔的模式分布、特性阻抗、耦合系数以及工作稳定性进行了研究.在此基础上给出了W波段高峰值功率扩展互作用速调管高频互作用系统设计,并采用三维粒子模拟(PIC)技术对电子的速度调制、群聚及其与高频场的相互作用和能量转换等物理过程进行了研究,定量给出了放大器的功率、带宽、效率以及增益等关键技术指标.PIC结果显示:在中心频率94.52 GHz以及电压16 k V、电流0.6 A的电子注参数下,最大输出功率达到1.8 k W,相应的增益和电子效率分别为47.7 d B和19.4%;扫频结果显示瞬时3 d B带宽为210 MHz.
基金supported by the Key Program ofthe National Natural Science Foundation of China(No.5063206)the Knowledge Innovation Program of the Chinese Academy of Sciences(Nos.C2-32,C2-50).
文摘To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. The laser-beam-induced-current （LBIC） technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be effectively suppressed, and the detector photo-sensitive area could be exactly defined.
