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阴/非离子型表面活性剂对CMP后SiO_(2)颗粒的去除效果
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作者 刘鸣瑜 高宝红 +3 位作者 梁斌 霍金向 李雯浩宇 贺斌 《半导体技术》 CAS 北大核心 2024年第5期461-470,共10页
为了更有效地去除铜晶圆化学机械抛光(CMP)后清洗残留的SiO_(2)颗粒,选择了2种阴离子型表面活性剂(SLS、TD⁃40)和2种非离子型表面活性剂(AEO⁃5、JFC⁃6),通过接触角、表面张力、电化学、分子动力学模拟实验探究了4种表面活性剂在铜表面... 为了更有效地去除铜晶圆化学机械抛光(CMP)后清洗残留的SiO_(2)颗粒,选择了2种阴离子型表面活性剂(SLS、TD⁃40)和2种非离子型表面活性剂(AEO⁃5、JFC⁃6),通过接触角、表面张力、电化学、分子动力学模拟实验探究了4种表面活性剂在铜表面的润湿性、吸附构型及吸附稳定性。通过优化表面活性剂质量浓度,选择达到吸附稳定时的质量浓度配置4种表面活性剂来清洗铜晶圆,利用扫描电子显微镜观测铜表面形貌,对比它们的清洗效果。随后选择TD⁃40和JFC⁃6进行复配,研究复配后表面活性剂对硅溶胶颗粒的去除效果。实验结果表明,使用体积比为2∶1的TD⁃40与JFC⁃6进行复配得到的CMP清洗液对SiO_(2)颗粒的去除效果比单一表面活性剂的更好。 展开更多
关键词 化学机械抛光(cmp) 吸附 颗粒去除 表面活性剂 复配 cmp后清洗
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Chemical Mechanical Planarization (CMP) for Microelectronic Applications 被引量:4
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作者 Li Yuzhuo 《合成化学》 CAS CSCD 2004年第z1期115-115,共1页
关键词 cmp for Microelectronic Applications Chemical Mechanical planarization
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pH调节剂在CMP工艺中的应用研究进展
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作者 董常鑫 牛新环 +4 位作者 刘江皓 占妮 邹毅达 何潮 李鑫杰 《半导体技术》 北大核心 2024年第1期30-38,共9页
pH调节剂在化学机械抛光(CMP)工艺中有重要应用,可以调节抛光液的pH值以确保抛光过程的化学反应在理想的pH值下进行,同时保持抛光化学环境的稳定等。对无机酸、有机酸、无机碱和有机碱四大类pH调节剂在合金、金属和金属化合物等材料的CM... pH调节剂在化学机械抛光(CMP)工艺中有重要应用,可以调节抛光液的pH值以确保抛光过程的化学反应在理想的pH值下进行,同时保持抛光化学环境的稳定等。对无机酸、有机酸、无机碱和有机碱四大类pH调节剂在合金、金属和金属化合物等材料的CMP中的应用及其作用机理进行综述。无机酸pH调节剂的主要作用机理是快速腐蚀材料表面,但其主要缺点是会将多余的金属离子引入抛光液中污染金属表面。有机酸pH调节剂的主要作用机理是螯合金属离子形成大分子络合物,但其主要缺点是稳定性差,难以保存。无机碱pH调节剂的主要作用机理是在基底表面生成一层软化层,使其在机械作用下更容易被去除,但其主要缺点是仍会引入金属离子污染材料表面。有机碱pH调节剂的主要作用机理是加速钝化膜的形成,但其主要缺点是制备困难、成本高。最后对pH调节剂在CMP中的应用前景进行了展望。 展开更多
关键词 PH调节剂 化学机械抛光(cmp) 抛光液 稳定性 平坦化
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磨粒振动对碳化硅CMP的微观结构演变和材料去除的影响
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作者 唐爱玲 苑泽伟 +1 位作者 唐美玲 王颖 《金刚石与磨料磨具工程》 CAS 北大核心 2024年第1期109-122,共14页
针对化学机械抛光中磨料易团聚、机械和化学作用不能充分发挥等问题,采用振动辅助的方法进行优化。通过分子动力学模拟,分析磨粒振动的频率、振幅及其压入深度、划切速度对工件表面微观原子迁移的演变规律,揭示振动对材料去除和表面改... 针对化学机械抛光中磨料易团聚、机械和化学作用不能充分发挥等问题,采用振动辅助的方法进行优化。通过分子动力学模拟,分析磨粒振动的频率、振幅及其压入深度、划切速度对工件表面微观原子迁移的演变规律,揭示振动对材料去除和表面改善的促进机制;并通过振动辅助化学机械抛光工艺试验和表面成分分析,验证振动辅助的抛光效果和去除机制。结果表明:适当增大磨粒的振动频率、振动振幅及其压入深度、划切速度,可有效提高工件表面的原子势能和温度;磨粒振动有利于提高工件表面原子的混乱度,促进碳化硅参与氧化反应,形成氧化层并以机械方式去除;抛光试验和成分分析也证实振动可以提高材料去除率约50.5%,改善表面质量约25.4%。 展开更多
关键词 碳化硅 振动 化学机械抛光 分子动力学
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CMP抛光垫表面及材料特性对抛光效果影响的研究进展
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作者 梁斌 高宝红 +4 位作者 刘鸣瑜 霍金向 李雯浩宇 贺斌 董延伟 《微纳电子技术》 CAS 2024年第4期38-48,共11页
对化学机械抛光(CMP)工艺中的抛光垫特性、劣化以及修整进行了简单阐述,重点先从抛光垫表面特性(抛光垫表面微形貌、微孔及抛光垫的结构、表面沟槽纹理的形状、微凸体的分布)和材质特性(硬度、弹性模量和化学性能)入手,对近年来国内外... 对化学机械抛光(CMP)工艺中的抛光垫特性、劣化以及修整进行了简单阐述,重点先从抛光垫表面特性(抛光垫表面微形貌、微孔及抛光垫的结构、表面沟槽纹理的形状、微凸体的分布)和材质特性(硬度、弹性模量和化学性能)入手,对近年来国内外的实验研究与理论模拟分析两方面进行了概括,总结了目前各个特性参数对抛光垫性能以及对CMP过程影响的进展,此外,从机械磨损和化学腐蚀两方面对抛光垫的劣化机理进行简要分析。随后,为进一步探究抛光垫修整对抛光性能影响,对抛光垫的两种修整方式和修整参数对修整的效果进行了归纳,介绍了几种新型自修整材料。最后,指出了抛光垫特性和修整在发展现状中存在的问题,未来抛光垫的发展趋势将逐渐走向创新化、智能化、理论化以及应用集成化。 展开更多
关键词 化学机械抛光(cmp) 抛光垫 表面特性 材质特性 修整
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半导体材料CMP过程中磨料的研究进展
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作者 何潮 牛新环 +4 位作者 刘江皓 占妮 邹毅达 董常鑫 李鑫杰 《微纳电子技术》 CAS 2024年第1期21-34,共14页
对磨料在半导体材料化学机械抛光(CMP)中的应用和研究进展进行了简单阐述,从各代半导体材料制成半导体器件的加工要求介绍了磨料在半导体材料CMP中的重要性,从CMP过程中磨料与半导体材料的相互作用介绍了磨料在半导体材料CMP中的环保性... 对磨料在半导体材料化学机械抛光(CMP)中的应用和研究进展进行了简单阐述,从各代半导体材料制成半导体器件的加工要求介绍了磨料在半导体材料CMP中的重要性,从CMP过程中磨料与半导体材料的相互作用介绍了磨料在半导体材料CMP中的环保性,从磨料的改性和制备介绍了磨料在半导体材料CMP中应用的限制性,重点从半导体材料的去除速率和表面质量介绍了磨料对半导体材料抛光性能的影响,并对国内外研究中单一磨料、混合磨料和复合磨料对半导体材料抛光性能的影响进行了评述,总结了近年来磨料在半导体材料CMP中的研究进展。最后,对磨料在半导体材料CMP中存在的共性问题进行了总结,并对该领域所面临的挑战及发展方向进行了展望。 展开更多
关键词 化学机械抛光(cmp) 抛光性能 磨料 去除速率 表面质量
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基于流固耦合的碳化硅衬底CMP过程温度场仿真分析
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作者 翟宇轩 李薇薇 +2 位作者 孙运乾 许宁徽 王晓剑 《组合机床与自动化加工技术》 北大核心 2024年第1期145-149,155,共6页
在碳化硅衬底化学机械抛光过程中,抛光界面温度是影响抛光效率的关键因素之一,掌握抛光界面温度分布情况,有助于更深入理解CMP机理并为工艺优化提供理论指导。为此,对碳化硅衬底的CMP过程中温度场分布情况进行了探究,分析了不同抛光工... 在碳化硅衬底化学机械抛光过程中,抛光界面温度是影响抛光效率的关键因素之一,掌握抛光界面温度分布情况,有助于更深入理解CMP机理并为工艺优化提供理论指导。为此,对碳化硅衬底的CMP过程中温度场分布情况进行了探究,分析了不同抛光工艺参数和抛光液组分对抛光界面温度的影响。利用有限元分析软件ANSYS的流固耦合模块,综合考虑抛光垫与抛光液对SiC衬底的磨削作用,得到抛光过程中SiC衬底表面温度分布。仿真结果表明,SiC衬底径向温度从中心到边缘逐渐增大,边缘处上升趋势逐渐减小甚至出现温度小幅下降,最大温差接近0.4℃(约为4%)。通过单因素实验探究不同影响因素与温度之间的关系,得出结论:随着抛光转速和抛光压力的增大,SiC表面平均温度上升,均近似成线性关系,并且边缘点与中心点温度变化相差越来越大;同时,衬底界面温度随着抛光液磨料浓度的增加而上升,但变化相对较小。 展开更多
关键词 化学机械抛光(cmp) 碳化硅 温度 流固耦合 有限元仿真
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复合磨料的制备及其对层间介质CMP性能的影响
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作者 陈志博 王辰伟 +4 位作者 罗翀 杨啸 孙纪元 王雪洁 杨云点 《半导体技术》 CAS 北大核心 2024年第4期323-329,共7页
以SiO_(2)为内核、CeO_(2)为外壳制备出了核壳结构复合磨料,用以提升集成电路层间介质的去除速率及表面一致性。采用扫描电子显微镜(SEM)观察复合磨料的表面形貌,利用X射线衍射仪(XRD)、傅里叶变换红外光谱仪(FTIR)和X射线光电子能谱仪(... 以SiO_(2)为内核、CeO_(2)为外壳制备出了核壳结构复合磨料,用以提升集成电路层间介质的去除速率及表面一致性。采用扫描电子显微镜(SEM)观察复合磨料的表面形貌,利用X射线衍射仪(XRD)、傅里叶变换红外光谱仪(FTIR)和X射线光电子能谱仪(XPS)分析复合磨料的表面物相结构及化学键组成。研究结果表明,所制备的复合磨料呈现出“荔枝”形,平均粒径为70~90 nm,CeO_(2)粒子主要以Si—O—Ce键与SiO_(2)内核结合。将所制备的复合磨料配置成抛光液进行层间介质化学机械抛光(CMP)实验。实验结果表明,Zeta电位随着pH值的降低而升高,当pH值约为6.8时达到复合磨料的等电点。当pH值为3时,层间介质去除速率达到最大,为481.6 nm/min。此外,研究发现去除速率还与摩擦力和温度有关,CMP后的SiO_(2)晶圆均方根表面粗糙度为0.287 nm。 展开更多
关键词 复合磨料 核壳结构 层间介质 化学机械抛光(cmp) 去除速率
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CMP抛光液中SiO_(2)磨料分散稳定性的研究进展
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作者 程佳宝 石芸慧 +6 位作者 牛新环 刘江皓 邹毅达 占妮 何潮 董常鑫 李鑫杰 《微纳电子技术》 CAS 2024年第2期25-35,共11页
对SiO_(2)磨料在化学机械抛光(CMP)抛光液中的应用以及影响抛光液分散稳定性的因素进行了阐述,重点从SiO_(2)磨料分散稳定性的角度介绍了SiO_(2)磨料质量分数和粒径、抛光液pH值、表面活性剂种类和表面改性等对抛光液稳定性的影响,通过... 对SiO_(2)磨料在化学机械抛光(CMP)抛光液中的应用以及影响抛光液分散稳定性的因素进行了阐述,重点从SiO_(2)磨料分散稳定性的角度介绍了SiO_(2)磨料质量分数和粒径、抛光液pH值、表面活性剂种类和表面改性等对抛光液稳定性的影响,通过分析Zeta电位绝对值的范围、凝胶时间的长短、粒径随时间的变化和接触角等,总结了小粒径(35 nm左右)SiO_(2)磨料在抛光液中的分散机理,同时探讨了弱碱性环境对磨料Zeta电位的影响,阳离子、阴离子和非离子表面活性剂对磨料表面的作用机理和复配使用的效果,以及表面疏水化或亲水化改性对磨料分散稳定性的影响。最后对该领域未来的发展方向进行了展望。 展开更多
关键词 化学机械抛光(cmp) SiO_(2)磨料 表面活性剂 分散稳定性 PH值
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E1310P和FMEE复配对铜膜CMP性能的影响
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作者 孙纪元 周建伟 +4 位作者 罗翀 田雨暄 李丁杰 杨云点 盛媛慧 《微纳电子技术》 CAS 2024年第4期187-195,共9页
针对化学机械抛光(CMP)中传统唑类缓蚀剂毒性强、成本高,在表面形成坚硬钝化膜难以去除等问题,在甘氨酸-双氧水体系下,使用阴离子表面活性剂聚氧乙烯醚磷酸酯(E1310P)和非离子表面活性剂脂肪酸甲酯乙氧基化物(FMEE)复配替代传统唑类缓... 针对化学机械抛光(CMP)中传统唑类缓蚀剂毒性强、成本高,在表面形成坚硬钝化膜难以去除等问题,在甘氨酸-双氧水体系下,使用阴离子表面活性剂聚氧乙烯醚磷酸酯(E1310P)和非离子表面活性剂脂肪酸甲酯乙氧基化物(FMEE)复配替代传统唑类缓蚀剂。通过去除速率、表面粗糙度和表面形貌等的实验结果研究了E1310P和FMEE协同作用对CMP过程中表面质量的影响。通过表面张力、电化学性能、X射线光电子能谱(XPS)和密度泛函理论(DFT)揭示了E1310P和FMEE的协同吸附行为及其机理。结果表明,E1310P可以吸附在Cu的表面,降低Cu的去除速率;FMEE的加入能有效屏蔽E1310P离子头基间的电性排斥作用,使更多的E1310P吸附在Cu的表面,在协同作用下形成了更致密的抑制膜,使得CMP抛光性能得以提升。 展开更多
关键词 化学机械抛光(cmp) 去除速率 协同吸附 表面质量 密度泛函理论(DFT)
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Angular and planar transport properties of antiferromagnetic V_(5)S_(8)
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作者 吴晓凯 王彬 +4 位作者 吴德桐 陈博文 弭孟娟 王以林 沈冰 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第2期66-71,共6页
Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared... Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferromagnetic(FM)system.It can persist to the temperatures above AF transition and exhibit strong angular field dependence.The phase diagram reveals various magnetic states by rotating the applied field.By analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line.The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations.These behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological origin.Our results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices. 展开更多
关键词 ANTIFERROMAGNETISM planar Hall effect magnetic and topological properties
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An approach for determination of lateral limit angle in kinematic planar sliding analysis for rock slopes
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作者 Xiaojuan Yang Jie Hu +1 位作者 Honglei Sun Jun Zheng 《Journal of Rock Mechanics and Geotechnical Engineering》 SCIE CSCD 2024年第4期1305-1314,共10页
Planar sliding is one of the frequently observed types of failure in rock slopes.Kinematic analysis is a classic and widely used method to examine the potential failure modes in rock masses.The accuracy of planar slid... Planar sliding is one of the frequently observed types of failure in rock slopes.Kinematic analysis is a classic and widely used method to examine the potential failure modes in rock masses.The accuracy of planar sliding kinematic analysis is significantly influenced by the value assigned to the lateral limit angleγlim.However,the assignment ofγlim is currently used generally based on an empirical criterion.This study aims to propose an approach for determining the value ofγlim in deterministic and probabilistic kinematic planar sliding analysis.A new perspective is presented to reveal thatγlim essentially influences the probability of forming a potential planar sliding block.The procedure to calculate this probability is introduced using the block theory method.It is found that the probability is correlated with the number of discontinuity sets presented in rock masses.Thus,different values ofγlim for rock masses with different sets of discontinuities are recommended in both probabilistic and deterministic planar sliding kinematic analyses;whereas a fixed value ofγlim is commonly assigned to different types of rock masses in traditional method.Finally,an engineering case was used to compare the proposed and traditional kinematic analysis methods.The error rates of the traditional method vary from 45%to 119%,while that of the proposed method ranges between 1%and 17%.Therefore,it is likely that the proposed method is superior to the traditional one. 展开更多
关键词 Kinematic analysis Block theory planar sliding Lateral limit angle Rock slope
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聚甲基丙烯酸对STI CMP中SiO_(2)和Si_(3)N_(4)去除速率选择比的影响
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作者 李相辉 张祥龙 +3 位作者 孟妮 聂申奥 邱宇轩 何彦刚 《半导体技术》 北大核心 2024年第2期131-137,共7页
在浅沟槽隔离(STI)化学机械抛光(CMP)中,需要保证极低的Si_(3)N_(4)去除速率,以及相对较高的SiO_(2)去除速率,并且要达到SiO_(2)与Si_(3)N_(4)的去除速率选择比大于30的要求。在CeO_(2)磨料质量分数为0.25%,抛光液pH=4的前提下,研究了... 在浅沟槽隔离(STI)化学机械抛光(CMP)中,需要保证极低的Si_(3)N_(4)去除速率,以及相对较高的SiO_(2)去除速率,并且要达到SiO_(2)与Si_(3)N_(4)的去除速率选择比大于30的要求。在CeO_(2)磨料质量分数为0.25%,抛光液pH=4的前提下,研究了聚甲基丙烯酸(PMAA)对SiO_(2)与Si_(3)N_(4)去除速率以及二者去除速率选择比的影响,分析了PMAA在影响SiO_(2)与Si_(3)N_(4)去除速率过程中的作用机理。结果表明,PMAA的加入可以降低SiO_(2)与Si_(3)N_(4)的去除速率,当PMAA的质量分数为120×10^(-6)时,SiO_(2)和Si_(3)N_(4)的去除速率分别为185.4 nm/min和3.0 nm/min,去除速率选择比为61。抛光后SiO_(2)与Si_(3)N_(4)晶圆表面有较好的表面粗糙度,分别为0.290 nm和0.233 nm。 展开更多
关键词 浅沟槽隔离(STI) 化学机械抛光(cmp) 二氧化硅(SiO_(2)) 氮化硅(Si_(3)N_(4)) 聚甲基丙烯酸(PMAA) 去除速率选择比
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Nonlinear dynamic modeling of planar moving Timoshenko beam considering non-rigid non-elastic axial effects
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作者 M.ABBASI GAVARI M.R.HOMAEINEZHAD 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI CSCD 2024年第3期479-496,共18页
Due to the importance of vibration effects on the functional accuracy of mechanical systems,this research aims to develop a precise model of a nonlinearly vibrating single-link mobile flexible manipulator.The manipula... Due to the importance of vibration effects on the functional accuracy of mechanical systems,this research aims to develop a precise model of a nonlinearly vibrating single-link mobile flexible manipulator.The manipulator consists of an elastic arm,a rotary motor,and a rigid carrier,and undergoes general in-plane rigid body motion along with elastic transverse deformation.To accurately model the elastic behavior,Timoshenko’s beam theory is used to describe the flexible arm,which accounts for rotary inertia and shear deformation effects.By applying Newton’s second law,the nonlinear governing equations of motion for the manipulator are derived as a coupled system of ordinary differential equations(ODEs)and partial differential equations(PDEs).Then,the assumed mode method(AMM)is used to solve this nonlinear system of governing equations with appropriate shape functions.The assumed modes can be obtained after solving the characteristic equation of a Timoshenko beam with clamped boundary conditions at one end and an attached mass/inertia at the other.In addition,the effect of the transverse vibration of the inextensible arm on its axial behavior is investigated.Despite the axial rigidity,the effect makes the rigid body dynamics invalid for the axial behavior of the arm.Finally,numerical simulations are conducted to evaluate the performance of the developed model,and the results are compared with those obtained by the finite element approach.The comparison confirms the validity of the proposed dynamic model for the system.According to the mentioned features,this model can be reliable for investigating the system’s vibrational behavior and implementing vibration control algorithms. 展开更多
关键词 planar moving Timoshenko beam non-rigid non-elastic axial effect as-sumed mode method(AMM) nonlinear motion analysis
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基于多源数据融合的半导体晶片CMP抛光材料去除率预测
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作者 方维 王宇宇 +2 位作者 宋志龙 吕冰海 赵文宏 《表面技术》 EI CAS CSCD 北大核心 2024年第2期150-157,167,共9页
目的 对半导体晶片抛光过程中的工艺参数、耗材使用量、抛光垫状态参数等多源数据预处理后进行数据融合,建立材料去除率(MRR)预测模型,为实现半导体晶片抛光加工工艺的决策和处理奠定基础。方法 研究晶片抛光加工中的数据特点及数据融... 目的 对半导体晶片抛光过程中的工艺参数、耗材使用量、抛光垫状态参数等多源数据预处理后进行数据融合,建立材料去除率(MRR)预测模型,为实现半导体晶片抛光加工工艺的决策和处理奠定基础。方法 研究晶片抛光加工中的数据特点及数据融合需求,提取数据集中每个晶片加工过程中的统计特征并生成新数据集,同时引入邻域特征以应对晶片加工过程中动态因素对材料去除率的影响。提出基于深度自动编码器的多源数据融合及材料去除率预测方法。设计深度自动编码器参数,优化深度自动编码器的损失函数从而增强深度自动编码器对强相关性特征变量的重建。基于深度自动编码器进行多源传感器信号融合,降低数据维度。使用超参数搜索算法优化BP神经网络超参数,利用BP神经网络方法将融合后的数据进行半导体晶片抛光过程中的材料去除率预测。结果 采用PHM2016数据集对模型进行验证,均方误差MSE达到7.862,相关性R^(2)达到91.2%。结论 基于多源数据的融合模型能有效预测MRR,可以对半导体晶片CMP工艺过程的智能决策与控制起到良好的辅助作用。 展开更多
关键词 化学机械抛光 材料去除率 数据融合 深度自动编码器 BP神经网络预测
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基于CMP模型的人工砂混凝土级配优化研究
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作者 潘婧 《水利规划与设计》 2024年第3期85-90,122,128,共8页
混凝土骨料颗粒级配的优劣直接影响混凝土成型质量。以人工砂混凝土骨料级配为研究对象,采用CMP(Concrete Mixture Proportioning)可压缩颗粒堆积模型对人工砂混凝土中的细骨料和粗骨料进行级配优化,并对优化级配和常规级配的砂浆及混... 混凝土骨料颗粒级配的优劣直接影响混凝土成型质量。以人工砂混凝土骨料级配为研究对象,采用CMP(Concrete Mixture Proportioning)可压缩颗粒堆积模型对人工砂混凝土中的细骨料和粗骨料进行级配优化,并对优化级配和常规级配的砂浆及混凝土性能展开研究,分析级配优化对水泥基材料性能的影响。结果表明,优化级配的砂浆在流动性、抗压强度、抗折强度、孔隙率等性能指标上均有提升,优化级配的混凝土在强度、孔隙率、氯离子电通量等性能指标上均高于常规级配混凝土。 展开更多
关键词 人工砂 cmp模型 级配优化 砂浆性能 混凝土性能
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TWO STEPS CHEMICAL-MECHANICAL POLISHING OF RIGID DISK SUBSTRATE TO GET ATOM-SCALE PLANARIZATION SURFACE 被引量:11
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作者 LEI Hong LUO Jianbin LU Xinchun 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2006年第4期496-499,共4页
In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing (CMP) of rigid disk substrate in the two s... In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing (CMP) of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness (Ra) and the average waviness (Wa) of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy (AFM) analysis shows that the final polished surfaces are ultra-smooth without micro-defects. 展开更多
关键词 TWo steps Chemical-mechanical polishing(cmp Rigid disk substrateAtom-scale planarization Slurry
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The organic diamond disk(ODD)for dressing polishing pads of chemical mechanical planarization 被引量:1
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作者 Chou Cheng-Shiang Sung James C. +1 位作者 Pai Yang-Liang Sung Michael 《金刚石与磨料磨具工程》 CAS 北大核心 2008年第S1期126-129,共4页
Diamond pad conditioners can determine the efficiency of CMP processes and the quality of polished wafers.The polishing rate of a wafer is dependent on the amplitude(height) of pad asperities.The polishing uniformity ... Diamond pad conditioners can determine the efficiency of CMP processes and the quality of polished wafers.The polishing rate of a wafer is dependent on the amplitude(height) of pad asperities.The polishing uniformity is controlled by the frequency(density) of such asperities.Current diamond pad conditioners cannot dress the pad to produce microns sized asperities at high density.This is because the tips of diamond grits cannot be leveled to the same height so the grooved pad top is uneven with excessive asperities that may ruin the wafer and under sized asperities that is easily glazed. New designs of diamond pad conditioners have markedly improved the leveling of diamond tips.Organic diamond disks(ODD) are manufactured by reverse casting of polymers.Due to the uniform spacing of diamond grits and their controlled tip heights,none of the diamond grits will be overly stressed.Moreover,all diamond grits are sharing the dressing work.Consequently,the number of working grits of ODD is significantly higher than conventional designs.Moreover,because no diamond will cut pad unecessarily,the pad life is greatly lengthened.Furthermore,due to the uniform distribution of pad asperities,the slurry will be held efficiently so the run off is avoided.As a result,the slurry usage is reduced.ODD is therefore a significant savor of CMP consumables for semiconductor manufacture. 展开更多
关键词 cmp DIAMOND DRESSER pad CONDITIONER EPOXY
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Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry 被引量:1
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作者 何敖东 刘波 +4 位作者 宋志棠 王良咏 刘卫丽 冯高明 封松林 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第8期177-182,共6页
In the paper, chemical mechanical planarization (CMP) of Ge2 Sb2Te5 (GST) is investigated using IC 1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate (RR)... In the paper, chemical mechanical planarization (CMP) of Ge2 Sb2Te5 (GST) is investigated using IC 1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate (RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC 1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope (OM) and scanning electron microscope (SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010. 展开更多
关键词 Ge2Sb2Te5 cmp polishing pad
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Research on Chemical Mechanical Planarization for Functional Ceramics
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作者 YUAN Ju-long, LIN Xu, Lü Bing-hai, JI Shi-ming, ZHANG Li-bin (Mechanical and Electronic Engineering College, Zhejiang University of Technology, Hangzhou 310014, China) 《厦门大学学报(自然科学版)》 CAS CSCD 北大核心 2002年第S1期52-53,共2页
Presently, the products of functional ceramic are widely applied in the light & mechatronics fields such as communication, aeronautic and astronautic engineering, military affairs and home-use electrical appliance... Presently, the products of functional ceramic are widely applied in the light & mechatronics fields such as communication, aeronautic and astronautic engineering, military affairs and home-use electrical appliance etc. It’s performance of working is mainly determined by the physical performance of the surface. And therefore the roughness and the affected layer’s depth of the final processing surface have a direct influence to the performance of the device. It is obvious that how to guarantee the processing quality of functional ceramic is a kernel problem whether it can achieve the purpose of application or not. Ultra-precision planarization is usually as the final processing method of functional ceramic substrates, and the mirror surface of Ra 0.01~0.002 μm can be obtained by ultra-precision polishing. For the ultra-precision planarization processing of functional ceramic material, simplex chemical or mechanical polishing method is very difficult to achieve the technic demands, and furthermore various defects of processing exist in the surface of crystal after planarization. However, chemical mechanical planarization (CMP) which has emerged recently as a new indispensable processing technique for higher degree planarization of functional ceramic is be able to satisfy the processing requests from the aspects of processing performance and rate. The current paper systematically introduces the processing course of functional ceramic by using chemical mechanical planarization. In addition, material removal mechanism is analyzed, and the choosing of processing conditions and components and effect of polishing slurry are discussed. Then the present research status and development trend of CMP technology for functional ceramic are discussed. Finally the current existing main questions and their solutions are presented. 展开更多
关键词 functional ceramic cmp no damage layer
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