Medium-wave HgCdTe thin films grown on germanium-based substrates by molecular beam epitaxy were treated by large area n-on-p injection junction and flip-flop mixing process.The chips interconnected with low-noise and...Medium-wave HgCdTe thin films grown on germanium-based substrates by molecular beam epitaxy were treated by large area n-on-p injection junction and flip-flop mixing process.The chips interconnected with low-noise and multimodal options readout circuit composed a 1280×1024 Medium-wave Infrared Focal Plane Cooling Detector whose pixel spacing was 15 microns.Its main photoelectric properties are average NETD equivalent to 18.5 mK,non-uniformity equivalent to 7.5%,operability equivalent to 98.97%.The paper also studies the substrate-removal technique on Germanium-based chip,which improves the stability and reliability of detector.展开更多
本文叙述了我国“铸铁平板”和“岩石平板”国家标准对平板工作面平面波动量的检定要求和检定方法。详细推导了平面波动仪的检出原理,给出了平板局部平面度误差和局部缺陷与平面波动量的关系。最后本文还对接触斑点和 200 mm 直线度与...本文叙述了我国“铸铁平板”和“岩石平板”国家标准对平板工作面平面波动量的检定要求和检定方法。详细推导了平面波动仪的检出原理,给出了平板局部平面度误差和局部缺陷与平面波动量的关系。最后本文还对接触斑点和 200 mm 直线度与平面波动量的关系进行了探讨。展开更多
文摘Medium-wave HgCdTe thin films grown on germanium-based substrates by molecular beam epitaxy were treated by large area n-on-p injection junction and flip-flop mixing process.The chips interconnected with low-noise and multimodal options readout circuit composed a 1280×1024 Medium-wave Infrared Focal Plane Cooling Detector whose pixel spacing was 15 microns.Its main photoelectric properties are average NETD equivalent to 18.5 mK,non-uniformity equivalent to 7.5%,operability equivalent to 98.97%.The paper also studies the substrate-removal technique on Germanium-based chip,which improves the stability and reliability of detector.
