He-charged oxide dispersion strengthened （ODS） FeCrNi fills were prepared by a radiofrequency （RF） plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C.As a comparison,He-charged FeCrN...He-charged oxide dispersion strengthened （ODS） FeCrNi fills were prepared by a radiofrequency （RF） plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C.As a comparison,He-charged FeCrNi films were also fabricated at the same conditions through direct current （DC） plasma magnetron sputtering.The doping of He atoms and Y2O3 in the FeCrNi fills was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method,respectively.Inductive coupled plasma （ICP） and x-ray photoelectron spectroscopy （XPS） analysis confirmed the existence of Y2O3 in FeCrNi fills,and Y2O3 content hardly changed with sputtering He/Ar ratio.Cross-sectional scanning electron microscopy （SEM） shows that the FeCrNi films were composed of dense colunnarnanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio.Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio,while the dispersion of Y2O3 apparently increased the hardness of the fills.Elastic recoil detection （ERD） showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts （～17 at.%）.Compared with the minimal change of He level with depth in DC-sputtered films,the He amount decreases gradually in depth in the RF-sputtered fills.The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.展开更多
The implantation of Cu into Si substrate was carried out by plasma based ion implantation (PBII) using unbalanced magnetron sputtering (UBMS) cathode as the metal plasma source. The different pulse bias ( U p) and the...The implantation of Cu into Si substrate was carried out by plasma based ion implantation (PBII) using unbalanced magnetron sputtering (UBMS) cathode as the metal plasma source. The different pulse bias ( U p) and the distance between the cathode and the samples ( d s-t ) were chosen to research the characteristics of this method. The results show that the implantation of metal ions can be realized by the metal plasma source of UBMS cathode. The physical process such as the metal ion pure implantation, the gas ion implantation, the recoil implantation of the metal atoms, the deposition of the metal particles and the re sputtering of the metal film depend on the energy, dose and deposition rate of the ions (Cu +, Ar +). The metal plasma based ion implantation of Cu into Si substrate is favored by selecting higher U p (60 kV) and larger d s-t (200 mm). [展开更多
基金financially supported by National Natural Science Foundation of China(No.11374299)
文摘He-charged oxide dispersion strengthened （ODS） FeCrNi fills were prepared by a radiofrequency （RF） plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C.As a comparison,He-charged FeCrNi films were also fabricated at the same conditions through direct current （DC） plasma magnetron sputtering.The doping of He atoms and Y2O3 in the FeCrNi fills was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method,respectively.Inductive coupled plasma （ICP） and x-ray photoelectron spectroscopy （XPS） analysis confirmed the existence of Y2O3 in FeCrNi fills,and Y2O3 content hardly changed with sputtering He/Ar ratio.Cross-sectional scanning electron microscopy （SEM） shows that the FeCrNi films were composed of dense colunnarnanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio.Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio,while the dispersion of Y2O3 apparently increased the hardness of the fills.Elastic recoil detection （ERD） showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts （～17 at.%）.Compared with the minimal change of He level with depth in DC-sputtered films,the He amount decreases gradually in depth in the RF-sputtered fills.The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.
文摘The implantation of Cu into Si substrate was carried out by plasma based ion implantation (PBII) using unbalanced magnetron sputtering (UBMS) cathode as the metal plasma source. The different pulse bias ( U p) and the distance between the cathode and the samples ( d s-t ) were chosen to research the characteristics of this method. The results show that the implantation of metal ions can be realized by the metal plasma source of UBMS cathode. The physical process such as the metal ion pure implantation, the gas ion implantation, the recoil implantation of the metal atoms, the deposition of the metal particles and the re sputtering of the metal film depend on the energy, dose and deposition rate of the ions (Cu +, Ar +). The metal plasma based ion implantation of Cu into Si substrate is favored by selecting higher U p (60 kV) and larger d s-t (200 mm). [
