A new analytical model to describe the drain-induced barrier lowering （DIBL） effect has been obtained by solving the two-dimensional （2D） Poisson＇s equation for the dual-channel 4H-SiC MESFET （DCFET）. Using thi...A new analytical model to describe the drain-induced barrier lowering （DIBL） effect has been obtained by solving the two-dimensional （2D） Poisson＇s equation for the dual-channel 4H-SiC MESFET （DCFET）. Using this analytical model, we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET, which characterize the DIBL effect. The results show that they are significantly dependent on the drain bias, gate length as well as the thickness and doping concentration of the two channel layers. Based on this analytical model, the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.展开更多
A new 4H silicon carbide metal semiconductor field-effect transistor （4H-SiC MESFET） structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applicatio...A new 4H silicon carbide metal semiconductor field-effect transistor （4H-SiC MESFET） structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applications. The physics-based analytical models for calculating the performance of the proposed device are obtained by solving one- and two-dimensional Poisson＇s equations. In the models, we take into account not only two regions under the gate but also a third high field region between the gate and the drain which is usually omitted. The direct-current and the alternating- current performances for the proposed 4H-SiC MESFET with a buffer layer of 0.2 ~tm are calculated. The calculated results are in good agreement with the experimental data. The current is larger than that of the conventional structure. The cutoff frequency （fT） and the maximum oscillation frequency （fmax） are 20.4 GHz and 101.6 GHz, respectively, which are higher than 7.8 GHz and 45.3 GHz of the conventional structure. Therefore, the proposed 4H-SiC MESFET structure has better power and microwave performances than the conventional structure.展开更多
基金Project supported by the Pre-research Foundation from the National Ministries and Commissions of China （Grant No. 51308030201）.
文摘A new analytical model to describe the drain-induced barrier lowering （DIBL） effect has been obtained by solving the two-dimensional （2D） Poisson＇s equation for the dual-channel 4H-SiC MESFET （DCFET）. Using this analytical model, we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET, which characterize the DIBL effect. The results show that they are significantly dependent on the drain bias, gate length as well as the thickness and doping concentration of the two channel layers. Based on this analytical model, the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.
基金Project supported by the Pre-research Foundation from the National Ministries and Commissions of China(Grant No.51308030201)
文摘A new 4H silicon carbide metal semiconductor field-effect transistor （4H-SiC MESFET） structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applications. The physics-based analytical models for calculating the performance of the proposed device are obtained by solving one- and two-dimensional Poisson＇s equations. In the models, we take into account not only two regions under the gate but also a third high field region between the gate and the drain which is usually omitted. The direct-current and the alternating- current performances for the proposed 4H-SiC MESFET with a buffer layer of 0.2 ~tm are calculated. The calculated results are in good agreement with the experimental data. The current is larger than that of the conventional structure. The cutoff frequency （fT） and the maximum oscillation frequency （fmax） are 20.4 GHz and 101.6 GHz, respectively, which are higher than 7.8 GHz and 45.3 GHz of the conventional structure. Therefore, the proposed 4H-SiC MESFET structure has better power and microwave performances than the conventional structure.
