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题名激电效应对瞬变电磁影响特征研究
被引量:6
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作者
徐凯军
李桐林
刘展
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机构
中国石油大学地球资源与信息学院
吉林大学地球探测科学与技术学院
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出处
《物探化探计算技术》
CAS
CSCD
2010年第6期613-616,共4页
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基金
国家油气重大专项(2008ZX05020-006)
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文摘
当地下存在极化体时,在瞬变电磁测量中可能会出现负电磁响应。为了研究极化体所产生的激电效应对瞬变电磁的响应规律,以频域电磁正演为基础,采用余弦变换,这里重点研究了在电偶源激发下,层状可极化大地和半空间三维极化体电场分量瞬变响应特征,总结了激电效应对瞬变电磁响应的影响规律。
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关键词
瞬变电磁
余弦变换
激电效应
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Keywords
transient electromagnetic fields
cosine transform
induced polarization effect
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分类号
P631.325
[天文地球—地质矿产勘探]
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题名瞬变电磁法三维模拟计算研究进展
被引量:11
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作者
薛国强
常江浩
雷康信
陈康
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机构
中国科学院地质与地球物理研究所中国科学院矿产资源研究重点实验室
中国科学院大学地球与行星科学学院
中国科学院地球科学研究院
青海省第三地质勘查院
河北地质大学河北省战略性关键矿产资源重点实验室
中国水利水电科学研究院流域水循环模拟与调控国家重点实验室
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出处
《地球科学与环境学报》
CAS
北大核心
2021年第3期559-567,共9页
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基金
第二次青藏高原综合科学考察研究专题(2019QZKK0804)
国家自然科学基金项目(42030106,42074121)
+2 种基金
中国科学院科研仪器设备研制项目(YJKYYQ20190004)
中国博士后科学基金项目(2020M670442)
自然资源部煤炭资源勘查与综合利用重点实验室开放项目(KF2020-3)。
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文摘
瞬变电磁法应用于矿产资源、环境工程等领域。目前主流的瞬变电磁三维正演模拟方法包括积分方程法、有限差分法、有限体积法和有限元法。随着观测环境的复杂化以及探测精度要求的提高,有必要研究瞬变电磁法高精度三维模拟计算,以便推动数据处理解释方法的进步。本文系统介绍了瞬变电磁三维正演计算研究进展,分析了准静态差分方程的构建和发射源的加载及边界的处理等有限差分法的关键技术,厘定出空间和时间离散以及大型线性方程组的求解等有限元法的难题。瞬变电磁数值模拟今后的发展方向是深入开展近源情况下受场源效应、复杂地形、极化效应等影响的三维模拟,以及特殊场情况下的多源多分量响应计算,为瞬变电磁法精细探测提供理论支撑。
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关键词
瞬变电磁法
三维计算
有限差分法
有限元法
快速精细模拟
准静态方程
场源效应
极化效应
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Keywords
transient electromagnetic method
three-dimentional simulation
finite difference method
finite element method
fast and fine simulation
quasi-static equation
field source effect
polarization effect
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分类号
P631
[天文地球—地质矿产勘探]
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题名衍射法高精度线径测量中偏振效应的研究
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作者
吕洪君
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机构
安徽教育学院物理系
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出处
《量子电子学报》
CAS
CSCD
1999年第5期470-474,共5页
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基金
安徽省教委基础研究基金
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文摘
本文主要研究光的偏振性对线任高精度测量的影响,线径包括金属狭缝、金属窄条和金属细丝.文中给出了测量实验结果,通过电磁场矢量衍射分析,进行了理论计算,理论计算与实验结果符合得较好.
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关键词
偏振效应
矢量衍射
光
线径
测量
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Keywords
polarization effect, electromagnetic field diffraction
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分类号
O436.3
[机械工程—光学工程]
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题名表面等离子体无掩膜干涉光刻系统的数值分析(英文)
被引量:5
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作者
董启明
郭小伟
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机构
电子科技大学光电信息学院
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出处
《光子学报》
EI
CAS
CSCD
北大核心
2012年第5期558-564,共7页
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基金
The National Natural Science Foundation of China(No.60906052)
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文摘
表面等离子体激元具有近场增强效应,可以代替光子作为曝光源形成纳米级特征尺寸的图像.本文数值分析了棱镜辅助表面等离子体干涉系统的参量空间,并给出了计算原理和方法.结果表明,适当地选择高折射率棱镜、低银层厚度、入射波长和光刻胶折射率,可以获得高曝光度、高对比度的干涉图像.入射波长为431nm时,选择40nm厚的银层,曝光深度可达200nm,条纹周期为110nm.数值分析结果为实验的安排提供了理论支持.
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关键词
干涉光刻
表面等离子体激元
克莱舒曼结构
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Keywords
Interference lithography
Surface plasmon plortiton
Kretschmann structureCLCN: TN305.7 Document Code:A Article ID:1004-4213(2012)05-0558-70 IntroductionThere is a growing interest in exploring new nanolithography techniques with high efficiency,low cost and large-area fabrication to fabricate nanoscale devices for nanotechnology applications.Conventional photolithography has remained a useful microfabrication technology because of its ease of repetition and suitability for large-area fabrication[1].The diffraction limit,however,restricts the fabrication scale of photolithography[2].Potential solutions that have actually been pursued require increasingly shorter illumination wavelengths for replicating smaller structures.It is becoming more difficult and complicated to use the short optical wavelengths to reach the desired feature sizes.Other methods such as electron beam lithography[3],ion beam lithography[4],scanning probe lithography[5],nanoimprint lithography(NIL)[6],and evanescent near-field optical lithography(ENFOL)[7] have been developed in order to achieve nanometer-scale features.As we know,the former three techniques need scanning and accordingly are highly inefficient.In NIL,the leveling of the imprint template and the substrate during the printing process,which determines the uniformity of the imprint result,is a challenging issue of this method.ENFOL have the potential to produce subwavelength structures with high efficiency,but it encounters the fact that the evanescent field decays rapidly through the aperture,thus attenuating the transmission intensity at the exit plane and limiting the exposure distance to the scale of a few tens of nanometers from the mask.In recent years,the use of surface-plasmon polaritons(SPPs) instead of photons as an exposure source was rapidly developed to fabricate nanoscale structures.SPPs are characterized by its near field enhancement so that SPP-based lithography can greatly extend exposure depth and improve pattern contrast.Grating-assisted SPP interference,such as SPP resonant interference nanolithography[8] and SPP-assisted interference nanolithography[9],achieved a sub-100nm interference pattern.The techniques,however,are necessary to fabricate a metal grating with a very fine period and only suitable for small-area interference.To avoid the fabrication of the metal grating,a prism-based SPP maskless interference lithography was proposed in 2006,which promises good lithography performance.The approach offers potential to achieve sub-65nm and even sub-32nm feature sizes.However,the structure parameters are always not ideal in a real system.One wants to know how much influence the parameter variations have on the pattern resolution and what variations of the parameters are allowed to obtain an effective interference.Thus,it is necessary to explore the parameter spaces.1 SPP maskless interference lithography systemThe SPP maskless interference lithography system is shown in Fig.1.A p-polarized laser is divided into two beams by a grating splitter,and then goes into the prism-based multilayer system.Under a given condition,the metal film can exhibit collective electron oscillations known as SPPs which are charge density waves that are characterized by intense electromagnetic fields confined to the metallic surface.If the metal layer Fig.1 Schematic for SPP maskless interference lithography systemis sufficiently thin,plasma waves at both metal interfaces are coupled,resulting in symmetric and antisymmetric SPPs.When the thickness h of metal film,dielectric constant ε1,ε2,ε3 of medium above,inside,below the metal film are specified,the coupling equation is shown as followstanh(S2h)(ε1ε3S22+ε22S1S3)+(ε1ε2S2S3+ε2ε3S1S2)=0
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分类号
TN305.7
[电子电信—物理电子学]
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