Comment on “Focusing of high polarization order axially-symmetric polarized beams” [Chin.Opt.Lett.7,938 (2009)]

Some mathematical and conceptual errors contained in a recent letter [Chin.Opt.Lett.7,938 （2009）] are pointed out.

Purification of chlorogenic acid in Flos Lonicerae with system of polar ordered resins

A system of polar ordered resins was established for purification of chlorogenic acid in Flos Lonicerae. It was composed of three reversed phase resins, AB-8, DM-130 and NKA-9, representative for their gradually increased polarity and selectivity. A method of RP-HPLC was used for determination of chlorogenic acid. And the performance of adsorption and desorption for chlorogenic acid with the system of polar ordered resins was studied. Furthermore, the effects of concentration, pH and flow rate of the adsorbate on adsorption ability were researched. It is indicated that the optimum parameters for chlorogenic acid are as follows: pH 3.5 with a flow rate of 2.5 BVh, the concentration of extract solution at 0.50, 0.40, 0.30 gL respectively for the adsorptive operation twice, and 6.93, 8.66, 10.39 molL ethanol used as gradient eluants. The purity of resulted product of chlorogenic acid arrives 70.20% with yield of 89.79%. With simple procedures, low costs and high purity product, the method of system of polar ordered resins followed by sequential reversed phase separations can be used to refine the chlorogenic acid in the extraction of Flos Lonicerae.

Effect of anionic ordering on the electronic and optical properties of BaTaO2N：TB-mBJ density functional calculation

This report presents a first-principles investigation of the structural, electronic, and optical properties of perovskite oxynitrides BaTaO2 N by means of density functional theory（DFT） calculations using the full-potential linearized augmented plane wave（FP-LAPW） method. Three possible structures（P4mm, I4/mmm, and Pmma） are considered according to the TaO4N2 octahedral configurations. The calculated structural parameters are found to be in good agreement with the previous theoretical and experimental results. Moreover, the electronic band structure dispersion, total, and partial densities of electron states are investigated to explain the origin of bandgaps and the contribution of each orbital＇s species in the valence and the conduction bands. The calculated minimum bandgaps of the P4 mm, I4/mmm, and Pmma structures are 1.83 e V, 1.59 e V, and 1.49 e V, respectively. Furthermore, the optical properties represented by the dielectric functions calculated for BaTaO2 N show that the I4/mmm phase absorbs the light at a large window in both the visible and UV regions,whereas the other two structures（P4mm and Pmma） are more active in the UV region. Our investigations provide important information for the potential application of this material.

Transition from isotropic to polar state of self-driven eccentric disks

Inspired by the eccentricity design of self-driven disks,we propose a computational model to study the remarkable behavior of this kind of active matter via Langevin dynamics simulations.We pay attention to the effect of rotational friction coefficient and rotational noise on the phase behavior.A homogeneous system without rotational noise exhibits a sharp discontinuous transition of orientational order from an isotropic to a polar state with the increase of rotational friction coefficient.When there is rotational noise,the transition becomes continuous.The formation of polar state originates from the effective alignment effect due to the mutual coupling of the positional and orientational degrees of freedom of each disk.The rotational noise could weaken the alignment effect and cause the large spatial density inhomogeneity,while the translational noise homogenizes the system.Our model makes further conceptual progress on how the microscopic interaction among self-driven agents yields effective alignment.

Control of photocurrent and multi-state memory by polar order engineering in 2H-stackedα-In_(2)Se_(3) ferroelectric

Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality,offering new opportunities for the design of novel electronic and optoelectronic devices.In this paper,we report a planar multi-state memory device built upon a twodimensional(2D)van der Waals layered ferroelectric material,2Hα-In_(2)Se_(3).Three(high,median and low)resistance states are demonstrated to be interconvertible in this device with a fast switching speed,excellent endurance and retention performances via the modulation of the polar order of the ferroelectricα-In_(2)Se_(3) layers under an in-plane electric field.Remarkably,reversible switching between the median-resistance state and the low-resistance state can be achieved by an ultralow electric field of 1-2 orders of magnitude smaller than the reported values in other 2D ferroelectric materialbased memory devices.Furthermore,the three different polar order states are discovered to exhibit distinctive photoresponses.These results demonstrate great potentials ofα-In_(2)Se_(3)in nonvolatile high-density memory and advanced optoelectronic device applications.