Surface roughness of zirconia for full-contour crowns after clinically simulated grinding and polishing

The aim of this study was to evaluate the effect of controlled intraoral grinding and polishing on the roughness of full-contour zirconia compared to classical veneered zirconia. Thirty bar-shaped zirconia specimens were fabricated and divided into two groups（n515）. Fifteen specimens（group 1） were glazed and 15 specimens（group 2） were veneered with feldspathic ceramic and then glazed. Prior to grinding,maximum roughness depth（Rmax） values were measured using a profilometer, 5 times per specimen. Simulated clinical grinding and polishing were performed on the specimens under water coolant for 15 s and 2 N pressure. For grinding, NTI diamonds burs with grain sizes of 20 mm, 10 mm, and 7.5 mm were used sequentially. The ground surfaces were polished using NTI kits with coarse, medium and fine polishers. After each step, Rmaxvalues were determined. Differences between groups were examined using one-way analysis of variance（ANOVA）. The roughness of group 1 was significantly lower than that of group 2. The roughness increased significantly after coarse grinding in both groups. The results after glazing were similar to those obtained after fine grinding for non-veneered zirconia. However, fine-ground veneered zirconia had significantly higher roughness than venerred, glazed zirconia. No significant difference was found between fine-polished and glazed zirconia, but after the fine polishing of veneered zirconia, the roughness was significantly higher than after glazing.It can be concluded that for full-contour zirconia, fewer defects and lower roughness values resulted after grinding and polishing compared to veneered zirconia. After polishing zirconia, lower roughness values were achieved compared to glazing; more interesting was that the grinding of glazed zirconia using the NTI three-step system could deliver smooth surfaces comparable to untreated glazed zirconia surfaces.

Next generation barrier CMP slurry with novel weakly alkaline chelating agent

To strengthen the device performance with the pattern wafer by enhancing the Cu polishing rate and improve the surface roughness with the Cu lines, a new weakly alkaline chelating agent with a barrier slurry is developed to meet the process demand of the advanced barrier chemical mechanical planarization（CMP）. This new chelating agent has a stronger chelating ability and a lower p H value than the previous generation-FA/O I chelating agent researched before. Without an unstable oxidant agent added in the polishing slurry, it is difficult to enhance the copper polishing rate during the barrier CMP. The stronger chelating ability of the new chelating agent could increase the copper polishing rate along with controlling the Cu/Ta/TEOS removal rate selectivity to meet the requirements of the IC fabrication process. Thus it has solved the problem of excessive roughness due to the lower polishing rate, avoiding reducing the device performance with the pattern wafer. The new chelating agent with its lower p H value could make it possible to protect the low-k dielectric under the barrier layer from structurally breaking. The CMP experiment was performed on the 12 inch MIT 854 pattern wafers with the barrier slurry containing the new weakly alkaline chelating agent. By the DOE optimization, the results indicate that as the new chelating agent concentration in the slurry was up to 2.5 m L/L, the copper polishing rate is about 31.082 nm/min.Meanwhile, the wafer surface has a rather low roughness value of 0.693 nm（10×10 μm）, the correction ability with the above slurry is adapted to the next generation barrier CMP and the k value of the low-k dielectric seems to have no k-shift. All the results presented show that the new weakly alkaline chelating agent with its superior performance can be used for the advanced barrier CMP.