GaN nanobelts are synthesized using the chemical vapor deposition method with the catalyst of Ni. The mi- crostrueture, composition and photoluminescence property are characterized by x-ray diffraction, field emission...GaN nanobelts are synthesized using the chemical vapor deposition method with the catalyst of Ni. The mi- crostrueture, composition and photoluminescence property are characterized by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectra. The results demonstrate that the single crystalline GaN nanobelts are grown with a hexagonal wurtzite structure, in width ranging from 500nm to 2μm and length up to 10-20μm. Moreover, a large piezoelectric coefficient d33 of 20pm/V is obtained from GaN nanobelts by an atomic force microscopy and the high piezoelectric property implies that the perfect single crystallinity and the freedom of dislocation for the GaN nanobelt have significant impact on the electromechanical response.展开更多
基金Supported by the Program for Changjiang Scholars and Innovative Research Team in University under Grant No IRT-14R48the National Natural Science Foundation of China under Grant No 51272158+2 种基金the Changjiang Scholar Incentive Program of the Education Ministry of China under Grant No[2009]17the China Postdoctoral Science Foundation Funded Project under Grant No 2014M551427the Hujiang Foundation of China under Grant No B14006
文摘GaN nanobelts are synthesized using the chemical vapor deposition method with the catalyst of Ni. The mi- crostrueture, composition and photoluminescence property are characterized by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectra. The results demonstrate that the single crystalline GaN nanobelts are grown with a hexagonal wurtzite structure, in width ranging from 500nm to 2μm and length up to 10-20μm. Moreover, a large piezoelectric coefficient d33 of 20pm/V is obtained from GaN nanobelts by an atomic force microscopy and the high piezoelectric property implies that the perfect single crystallinity and the freedom of dislocation for the GaN nanobelt have significant impact on the electromechanical response.
