Highly sensitive,sub-microsecond polymer photodetectors for blood oxygen saturation testing

Bottom surface of active layers and interface of indium tin oxide(ITO)electrodes and active layers play a crucial role in determining the performance of polymer photodetectors with photomultiplication(PM-PPDs).The interfacial trapped electron distribution closing to ITO electrodes will determine spectral response range and external quantum efficiency(EQE)of PMPPDs.The bottom interface is more sensitive than top interface when light is coming from the ITO side,and the larger density of generated charge on the bottom interfaces will induce interfacial band more bending for efficient charge tunneling injection.Highly sensitive and sub-microsecond PM-PPDs are achieved with PMBBDT:Y6(100:7,w/w)as active layers under forward bias,yielding EQE of 18,700%at 320 nm,21,700%at 600 nm and 16,400%at 810 nm under a bias of 7 V,respectively,as well as fast response time of 79μs.The high EQE of the PM-PPDs is attributed to efficient hole tunneling injection from ITO electrode under forward bias.The electron traps closing to ITO electrode will be quickly filled up when light is coming from ITO side,leading to interfacial band more bending for hole tunneling injection.Importantly,the PM-PPDs is performed to measure heart rate(HR)and blood oxygen saturation(SpO_(2)),and the measured data by the PM-PPDs are very similar with those obtained by commercial photodetectors.

Broadband photomultiplication-type polymer photodetectors and its application in light-controlled circuit

Photomultiplication-type polymer photodetectors(PM-PPDs)were achieved with polymer P3HT as donor and PY3Se-1V as acceptor based on structure of ITO/PEDOT:PSS/active layer/Al.The optimal weight ratio of P3HT to PY3Se-1V is about 100:3.Amounts of isolated electron traps are formed with PY3Se-1V surrounded by P3HT due to rather less content of PY3Se-1V in active layers and about 0.94 e V energy offset between the lowest unoccupied molecular orbitals(LUMO)of P3HT and PY3Se-1V.The optimal PM-PPDs exhibit broad spectral response from 350 to 950 nm and external quantum efficiency(EQE)values of68,200%at 360 nm,26,400%at 630 nm and 19,500%at 850 nm under-15 V bias.The working mechanism of PM-PPDs is attributed to the interfacial trap-assisted hole tunneling injection from external circuit.The performance of PM-PPDs can be further improved by incorporating appropriate PMBBDT with high hole mobility as the third component.The EQE values of optimal ternary PM-PPDs are increased to 105,000%at 360 nm,40,000%at 630 nm and 31,800%at 850 nm under-15 V bias,benefiting from the enhanced hole transport in ternary active layers.The optimal ternary PM-PPDs were successfully applied in a light-controlled circuit to turn on or turn off light emitting diode(LED).

DPP基窄带隙聚合物光伏型探测器性能研究

有机/聚合物光探测器以其光谱选择可控、带隙可调、制备工艺简单、易于实现大面积柔性器件等突出优点,一直备受关注。选择结构简单的3,3′-双甲氧基取代的联二噻吩(OT)、3,4-二甲氧基噻吩(O)和3,6-二甲氧基噻并[3,2-b]噻吩(OTT)等寡聚噻吩单元作富电子单元,吡咯[3,4-c]吡咯-1,4-二酮(DPP)作缺电子单元,制备系列D-A型窄带隙共轭聚合物POT-DPP,PO-DPP和POTT-DPP,并对聚合物的热稳定性、吸收光谱、聚集状态、能级及其光伏型探测器件的光伏性能、电荷迁移、复合损失过程及比探测率(D*)等进行了系统研究。其中含更大共轭平面的POTT-DPP:PC71BM的光探测器的探测性能最佳,在400 nm和850 nm处的D*分别为1.87×10^(11)Jones和1.67×10^(11)Jones,这主要受益于器件中高且平衡的空穴/电子迁移率,能更好地抑制双分子复合、陷阱辅助复合以及形成更有利的光敏层表面形貌。此项工作证明,通过增大D-A型共轭聚合物主链上的富电子单元的有效共轭面积,可以调节聚合物的带隙,促进探测器件载流子迁移,抑制其复合,从而促进光伏型光探测器件性能的显著提升。

PEDOT的固相聚合法制备及其在紫外光探测器中的应用

首先以2,5-二溴-3,4-乙撑二氧噻吩(DBEDOT)为单体,通过固相聚合法在掺杂氟的二氧化锡导电玻璃(FTO)基底表面制备聚(3,4-乙撑二氧噻吩)(PEDOT)膜,然后将其与氧化锌纳米阵列(ZnO NRs)修饰的FTO组装成有机-无机异质结紫外光探测器,并研究其紫外光探测性能。采用紫外-可见分光光谱(UV-Vis)、傅里叶变换红外光谱(FT-IR)、扫描电子显微镜(SEM)、X射线衍射光谱(XRD)等测试方法对材料进行表征。结果表明,固相聚合法制备的PEDOT能有效提升ZnO NRs基紫外光探测器的性能。器件在紫外光照射下(365 nm,0.32 mW/cm^(2))表现出较高响应度(15.34 mA/W)、较短响应时间(上升时间为0.159 s,下降时间为0.162 s)和较好的稳定性。