ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed b...ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In^3＋ and Sn^4＋, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.展开更多
Flexible spin valves were prepared by magnetron sputtering on polyimide substrates. The buffer layer that reduces significantly the effect of the polymer substrate on the spin valve microstructure and magnetoresistive...Flexible spin valves were prepared by magnetron sputtering on polyimide substrates. The buffer layer that reduces significantly the effect of the polymer substrate on the spin valve microstructure and magnetoresistive properties was revealed. Bending deformation was applied to the microobjects based on the flexible spin valves in parallel to anisotropy axes. It was revealed that during the bend the magnetoresistance changes due to the joint impact of both the change of the magnetic field projection on the film plane and the change of the magnetic properties of the ferromagnetic layers. The obtained dependences have been used in construction of bending sensor, in which the flexible spin valve microstripes were united into the Wheatstone bridge.展开更多
文摘ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In^3＋ and Sn^4＋, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.
基金performed within the framework of State Assignment from the Ministry of Education and Science of Russian Federation (topic Spin, No. 122021000036-3 and topic Magnet, No. 122021000034-9)partially supported by the Russian Foundation for Basic Research (project No. 2042-660018)。
文摘Flexible spin valves were prepared by magnetron sputtering on polyimide substrates. The buffer layer that reduces significantly the effect of the polymer substrate on the spin valve microstructure and magnetoresistive properties was revealed. Bending deformation was applied to the microobjects based on the flexible spin valves in parallel to anisotropy axes. It was revealed that during the bend the magnetoresistance changes due to the joint impact of both the change of the magnetic field projection on the film plane and the change of the magnetic properties of the ferromagnetic layers. The obtained dependences have been used in construction of bending sensor, in which the flexible spin valve microstripes were united into the Wheatstone bridge.
