Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multilayer conc...Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multilayer concept is presented to control the property for as-deposited polysilicon. A 3-μm thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon. The results show that a 3-μm-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/μm stress gradient through the film thickness is fabricated successfully.展开更多
The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at...The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition （LPCVD） are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems （MEMS） devices, especially in high resonance frequency （high-f） and high quality factor （high-Q） MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process （〉 1000 ℃）, and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.展开更多
The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric ...The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric precision in the determination of the microcantilever beam deflection. The method is described clearly. In the deflection of microbeams, the influence of the indenter tip pushing into the top of the microbeams and the curvature across its width must be considered. The measurements were made on single-layer, micro-thick, several kinds of width and length polysilicon beams that were fabricated using conventional integrated circuit (IC) fabrication techniques. The elastic of a polysilicon microcantilever beam will vary linearly with the force and the deformation is thought to be elastic. Furthermore, it suggests that Young modulus of the beam can be determined from the slope of this linear relation. From the load deflection data acquired during bending the mechanical properties of the thin films were determined. Measured Young modulus is 137 GPa with approximately a ±2.9%～±6.3% difference in Young modulus.展开更多
文摘Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multilayer concept is presented to control the property for as-deposited polysilicon. A 3-μm thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon. The results show that a 3-μm-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/μm stress gradient through the film thickness is fabricated successfully.
基金supported by the National High Technology Research and Development Program of China(No.2007AA04Z322)the State Key Development Program for Basic Research of China (No.2009CB320305)the Chinese Academy of Sciences
文摘The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition （LPCVD） are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems （MEMS） devices, especially in high resonance frequency （high-f） and high quality factor （high-Q） MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process （〉 1000 ℃）, and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.
文摘The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric precision in the determination of the microcantilever beam deflection. The method is described clearly. In the deflection of microbeams, the influence of the indenter tip pushing into the top of the microbeams and the curvature across its width must be considered. The measurements were made on single-layer, micro-thick, several kinds of width and length polysilicon beams that were fabricated using conventional integrated circuit (IC) fabrication techniques. The elastic of a polysilicon microcantilever beam will vary linearly with the force and the deformation is thought to be elastic. Furthermore, it suggests that Young modulus of the beam can be determined from the slope of this linear relation. From the load deflection data acquired during bending the mechanical properties of the thin films were determined. Measured Young modulus is 137 GPa with approximately a ±2.9%～±6.3% difference in Young modulus.
