Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si...Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.展开更多
A supercell of a nanotube heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） is established, in which 96 C atoms and 32 Si atoms are included. The geometry ...A supercell of a nanotube heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） is established, in which 96 C atoms and 32 Si atoms are included. The geometry optimization and the electronic property of the heterojunction are implemented through the first-principles calculation based on the density functional theory （DFT）. The results indicate that the structural rearrangement takes place mainly on the interface and the energy gap of the heterojunction is 0.31 eV, which is narrower than those of the isolated CNT and the isolated SiCNT. By using the average bond energy method, the valence band offset and the conduction band offset are obtained as 0.71 and -0.03 eV, respectively.展开更多
A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining n...A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively.展开更多
A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based ...A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations. In this structure, the channel regions are made of Si to take advantage of its high channel mobility and carrier density. The voltage-withstanding region is made of 4H-SiC so that HDT-MOS has a high breakdown voltage (BV) similar to pure 4H-SiC double-trench MOSFETs (DT-MOSs). The gate-controlled tunneling effect indicates that the gate voltage (V_(G)) has a remarkable influence on the tunneling current of the heterojunction. The accumulation layer formed with positive VG can reduce the width of the Si/SiC heterointerface barrier, similar to the heavily doped region in an Ohmic contact. This narrower barrier is easier for electrons to tunnel through, resulting in a lower heterointerface resistance. Thus, with similar BV (approximately 1770 V), the specific on-state resistance (R_(ON-SP)) of HDT-MOS is reduced by 0.77 mΩ·cm^(2) compared with that of DT-MOS. The gate-to-drain charge (Q_(GD)) and switching loss of HDT-MOS are 52.14% and 22.59% lower than those of DT-MOS, respectively, due to the lower gate platform voltage (V_(GP)) and the corresponding smaller variation (ΔV_(GP)). The figure of merit (Q_(GD)×R_(ON-SP)) of HDT-MOS decreases by 61.25%. Moreover, the heterointerface charges can reduce RON-SP of HDT-MOS due to trap-assisted tunneling while the heterointerface traps show the opposite effect. Therefore, the HDT-MOS structure can significantly reduce the working loss of SiC MOSFET, leading to a lower temperature rise when the devices are applied in the system.展开更多
文摘Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.
基金supported by the National Defense Pre-research Foundation of China (Grant No 9140A08060407DZ0103)
文摘A supercell of a nanotube heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） is established, in which 96 C atoms and 32 Si atoms are included. The geometry optimization and the electronic property of the heterojunction are implemented through the first-principles calculation based on the density functional theory （DFT）. The results indicate that the structural rearrangement takes place mainly on the interface and the energy gap of the heterojunction is 0.31 eV, which is narrower than those of the isolated CNT and the isolated SiCNT. By using the average bond energy method, the valence band offset and the conduction band offset are obtained as 0.71 and -0.03 eV, respectively.
基金supported by the Pre-Research Foundation from the National Ministries and Commissions(No.51308040203)
文摘A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively.
基金the Major Science and Technology Program of Anhui Province under Grant No.2020b05050007.
文摘A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations. In this structure, the channel regions are made of Si to take advantage of its high channel mobility and carrier density. The voltage-withstanding region is made of 4H-SiC so that HDT-MOS has a high breakdown voltage (BV) similar to pure 4H-SiC double-trench MOSFETs (DT-MOSs). The gate-controlled tunneling effect indicates that the gate voltage (V_(G)) has a remarkable influence on the tunneling current of the heterojunction. The accumulation layer formed with positive VG can reduce the width of the Si/SiC heterointerface barrier, similar to the heavily doped region in an Ohmic contact. This narrower barrier is easier for electrons to tunnel through, resulting in a lower heterointerface resistance. Thus, with similar BV (approximately 1770 V), the specific on-state resistance (R_(ON-SP)) of HDT-MOS is reduced by 0.77 mΩ·cm^(2) compared with that of DT-MOS. The gate-to-drain charge (Q_(GD)) and switching loss of HDT-MOS are 52.14% and 22.59% lower than those of DT-MOS, respectively, due to the lower gate platform voltage (V_(GP)) and the corresponding smaller variation (ΔV_(GP)). The figure of merit (Q_(GD)×R_(ON-SP)) of HDT-MOS decreases by 61.25%. Moreover, the heterointerface charges can reduce RON-SP of HDT-MOS due to trap-assisted tunneling while the heterointerface traps show the opposite effect. Therefore, the HDT-MOS structure can significantly reduce the working loss of SiC MOSFET, leading to a lower temperature rise when the devices are applied in the system.
