The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiN...The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (I-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.展开更多
Highly ordered poly crystalline Si nanowire arrays were synthesized in porous anodic aluminum oxide (AAO) templates by the chemical vapor deposition (CVD) method. The morphological structure, the crystal character of ...Highly ordered poly crystalline Si nanowire arrays were synthesized in porous anodic aluminum oxide (AAO) templates by the chemical vapor deposition (CVD) method. The morphological structure, the crystal character of Si nanowire arrays and the individual nanowire were analyzed by the transmission electron microscopy (TEM), scanning electron microscopy (SEM), atom force microscopy (AFM) and the X-ray diffraction spectrum (XRD), respectively. It is shown that most fabricated silicon nanowires (SiNWs) tend to be assembled parallelly in bundles and constructed with highly orientated arrays. This method provides a simple and low cost fabricating craftwork and the diameters and lengths of SiNWs can be controlled, the large area Si nanowire arrays can be achieved easily under such a way. The curling and twisting SiNWs are fewer than those by other synthesis methods.展开更多
Copper nanowires were fabricated by electrochemical deposition inside anodic alumina template anodized on aluminum substrate. The morphology, composition and structure of the copper nanowires were characterized by mea...Copper nanowires were fabricated by electrochemical deposition inside anodic alumina template anodized on aluminum substrate. The morphology, composition and structure of the copper nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive (EDS) and X-ray diffraction spectroscopy (XRD). The results revealed that copper nanowires were dense, continuous, highly-crystalline and uniform with diameters. The electrical properties of copper nanowires wrer characterized with two-terminal electrical measurements. Different current-voltage (I-V) characteristics of single copper nanowire were observed and possible conductive mechanisms were discussed. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits.展开更多
基金The authors thank Mr. Cao Guixun of Analysis and Testing Center of Gansu Province Cor usefulhelp and discussion. This work was supported by the National Natural Science Foundation of China (Grant Nos. 69890220 and 69871013).
文摘The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (I-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.
基金This work was supported by the National Natural Science Foundation of China (Grant Nos. 69890220 and 69871013).
文摘Highly ordered poly crystalline Si nanowire arrays were synthesized in porous anodic aluminum oxide (AAO) templates by the chemical vapor deposition (CVD) method. The morphological structure, the crystal character of Si nanowire arrays and the individual nanowire were analyzed by the transmission electron microscopy (TEM), scanning electron microscopy (SEM), atom force microscopy (AFM) and the X-ray diffraction spectrum (XRD), respectively. It is shown that most fabricated silicon nanowires (SiNWs) tend to be assembled parallelly in bundles and constructed with highly orientated arrays. This method provides a simple and low cost fabricating craftwork and the diameters and lengths of SiNWs can be controlled, the large area Si nanowire arrays can be achieved easily under such a way. The curling and twisting SiNWs are fewer than those by other synthesis methods.
基金supported by the National Natural Science Foundation of China (51002030)International Cooperation Project in Suzhou (SH201117)+1 种基金Excellent Young Teacher Support Plan of Southeast University,in part by the New Century Talents of Ministry of Education (NCET-11-0095)the PhD Program Foundation of Ministry of Education of China(20100092120006)
文摘Copper nanowires were fabricated by electrochemical deposition inside anodic alumina template anodized on aluminum substrate. The morphology, composition and structure of the copper nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive (EDS) and X-ray diffraction spectroscopy (XRD). The results revealed that copper nanowires were dense, continuous, highly-crystalline and uniform with diameters. The electrical properties of copper nanowires wrer characterized with two-terminal electrical measurements. Different current-voltage (I-V) characteristics of single copper nanowire were observed and possible conductive mechanisms were discussed. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits.
