A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The ini...A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.展开更多
Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation...Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.展开更多
The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiN...The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (I-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 10804026 and 51101049the Natural Science Foundation of Hebei Province under Grant Nos A2013205101 and A2014205051the Hebei Talent Cultivation Foundation under Grant No A201400119
文摘A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid-hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO2 layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.
基金The project was supported by the Foundation of Chinese Academy of Sciences.
文摘Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.
基金The authors thank Mr. Cao Guixun of Analysis and Testing Center of Gansu Province Cor usefulhelp and discussion. This work was supported by the National Natural Science Foundation of China (Grant Nos. 69890220 and 69871013).
文摘The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (I-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.
