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Diamond Like Carbon Film Deposited on Porous Silicon as Passivation Coating
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作者 QU Jian-hua XIA Yi-ben +3 位作者 WANG Lin-jun MO Yao-wu TANG Ding-yuan (College of Material Science and Engineering, Shanghai University, Shanghai 201800, CHN National lab. of Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, CHN) 《Semiconductor Photonics and Technology》 CAS 2000年第2期100-104,共5页
By depositing diamond like carbon (DLC) film with radio frequency plasma chemical vapor deposition (RFPCVD) method, a new surface passivation technique for photoluminescence porous silicon (PS) has been studied. The s... By depositing diamond like carbon (DLC) film with radio frequency plasma chemical vapor deposition (RFPCVD) method, a new surface passivation technique for photoluminescence porous silicon (PS) has been studied. The surface microstructure and photoelectric properties of both porous silicon and DLC coated PS have been analyzed by using AFM, FTIR and PL spectrotrieters. The results show the DLC film with dense and homogenous nanometer grains can be deposited on the PS used as passivation coating as it can terminate oxide reaction on the surface of the PS. Furthermore, certain ratio of hydrogen existed in the DLC film can be improved to form hydride species on the DLC/PS interface as the centers of the luminescence so that the DLC coating is of benefit not only to the passivation of the PS but also to the improvement of its luminescent intensity. 展开更多
关键词 Diamond like carbon film Passivation coating porous silicon PHOTOLUMINESCENCE
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Ge覆盖多孔硅结构的桔绿光发射 被引量:1
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作者 唐宁 吴兴龙 +1 位作者 顾沂 鲍希茂 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第12期1525-1528,共4页
使用 5 14 .5 nm Ar+激光检测了 Ge覆盖多孔硅结构的光致发光谱 (PL) ,观察到峰位 2 .2 5 e V,半峰宽约 0 .1e V的一个新的桔绿发光峰 .随着覆盖 Ge薄膜的加厚 ,这个桔绿发光峰的峰位保持不变 ,但发光强度显著下降 .实验和分析结果表明 ... 使用 5 14 .5 nm Ar+激光检测了 Ge覆盖多孔硅结构的光致发光谱 (PL) ,观察到峰位 2 .2 5 e V,半峰宽约 0 .1e V的一个新的桔绿发光峰 .随着覆盖 Ge薄膜的加厚 ,这个桔绿发光峰的峰位保持不变 ,但发光强度显著下降 .实验和分析结果表明 ,该桔绿发光峰源于多孔硅和嵌于其孔中的 Ge纳米晶粒两者界面中的 展开更多
关键词 覆盖多孔硅 光致发光 光谱分析
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