The erbium ions at energy of 400 keV and dose of 5× 10^15 ions/cm^2 were implanted into silicon single crystals at room temperature at the angles of 0°,45° and 60°. The lateral spread of 400 keV er...The erbium ions at energy of 400 keV and dose of 5× 10^15 ions/cm^2 were implanted into silicon single crystals at room temperature at the angles of 0°,45° and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM＇98 （Transport of Ions in Matter） and SRIM2006 （Stopping and Range of Ions in Matter） codes.展开更多
Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1 × 10^13, 1 × 10^14, 1 × 10^15, and 5 × 10^15...Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1 × 10^13, 1 × 10^14, 1 × 10^15, and 5 × 10^15 atom/cm2, respectively. The effects of the implantation dose and annealing temperature on the GaN band-edge luminescence are investigated. The cathodoluminescence spectra from 82 to 323 K are measured for 1 × 10^15 atom/cm2- implanted GaN annealed at 1100℃. Luminescence peaks at 356, 362, 376, 390, and 414 nm are observed on the 82 K cathodoluminescence spectrum. When the temperature is increased to 150 K, the intensities of the 356 and 414 nm peaks are nearly unchanged and the 362,376, and 390 nm peaks disappear. The intensity ratio of 538 nm （2H11/2 →4 4I15/2） and 559 nm （4A3/2 →4I15/2） is increased with the increase in temperature. We try to shed light on the above interesting phenomena.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10975094 and 10735070)the National Basic Research Program of China (Grant No. 2010CB832906)+1 种基金Program for New Century Excellent Talents in University,Ministry of Education of China (Grant No. NCET-07-0516)the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 10422-2007B1)
文摘The erbium ions at energy of 400 keV and dose of 5× 10^15 ions/cm^2 were implanted into silicon single crystals at room temperature at the angles of 0°,45° and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM＇98 （Transport of Ions in Matter） and SRIM2006 （Stopping and Range of Ions in Matter） codes.
基金partly supported by the National Natural Science Fund of China(Nos.61306004,51002179,11304354 and 51272270)the STS-Network Plan+2 种基金the CAS(No.KFJ-EW-STS-043)the Natural Science Fund of Jiangsu Province(No.BK20130263)the Collaborative Innovation Center of Suzhou Nano Science and Technology,and the PAPD and USTS Cooperative Innovation Center
文摘Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1 × 10^13, 1 × 10^14, 1 × 10^15, and 5 × 10^15 atom/cm2, respectively. The effects of the implantation dose and annealing temperature on the GaN band-edge luminescence are investigated. The cathodoluminescence spectra from 82 to 323 K are measured for 1 × 10^15 atom/cm2- implanted GaN annealed at 1100℃. Luminescence peaks at 356, 362, 376, 390, and 414 nm are observed on the 82 K cathodoluminescence spectrum. When the temperature is increased to 150 K, the intensities of the 356 and 414 nm peaks are nearly unchanged and the 362,376, and 390 nm peaks disappear. The intensity ratio of 538 nm （2H11/2 →4 4I15/2） and 559 nm （4A3/2 →4I15/2） is increased with the increase in temperature. We try to shed light on the above interesting phenomena.
