Advances in CIGS thin film solar cells with emphasis on the alkali element post-deposition treatment

In the past tens of years,the power conversion efficiency of Cu(In,Ga)Se2(CIGS)has continuously improved and been one of the fastest growing photovoltaic technologies that can also help us achieve the goal of carbon emissions reduction.Among several key advances,the alkali element post-deposition treatment(AlK PDT)is regarded as the most important finding in the last 10 years,which has led to the improvement of CIGS solar cell efficiency from 20.4%to 23.35%.A profound understanding of the influence of alkali element on the chemical and electrical properties of the CIGS absorber along with the underlying mechanisms is of great importance.In this review,we summarize the strategies of the alkali element doping in CIGS solar cell,the problems to be noted in the PDT process,the effects on the CdS buffer layer,the effects of different alkali elements on the structure and morphology of the CIGS absorber layer,and retrospect the progress in the CIGS solar cell with emphasis on the alkali element post deposition treatment.

Properties of Reactive Magnetron Sputtered ITO Films without in-situ Substrate Heating and Post-deposition Annealing

Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.

Post-deposition dynamics of multiple cluster aggregation on liquid surfaces

A comprehensive simulation model--deposition, diffusion, rotation and aggregation--is presented to demonstrate the post-deposition phenomena of multiple cluster growth on liquid surfaces, such as post-deposition nucleation, post- deposition growth and post-deposition coalescence. Emphasis is placed on the relaxations of monomer density, dimer density and cluster density as well as combined cluster-plus-monomer density with time after deposition ending. It is shown that post-deposition coalescence largely takes place after deposition due to the large mobility of clusters on liquid surfaces, while the post-deposition nucleation is only possible before the saturation cluster density is reached at the end of the deposition. The deposition flux and the moment of deposition ending play important roles in the post-deposition dynamics.

Achieving strength-ductility synergy in cold spray additively manufactured Al/B4C composites through a hybrid post-deposition treatment

Cold spray additive manufacturing(CSAM) provides a potential solid state manufacturing route to fabricate variety of aluminum matrix composites(AMCs) with reduced possibility of undesired chemical reactions and residual thermal stresses. This study presents a hybrid(i.e. hot compression + hot rolling)post-deposition treatment to reinvigorate the mechanical properties of cold spray additively manufactured Al/B4 C composites. The as-deposited samples were initially subjected to 30% thickness reduction via hot compression treatment at 500°C followed by a hot rolling treatment with 40% thickness reduction in 2 passes. Electron backscatter diffraction(EBSD) and high resolution transmission electron microscopy(HRTEM) results revealed that after hybrid post-deposition treatment(involving 70%accumulative thickness reduction), the aluminum grains in the matrix were extensively refined due to simultaneous operation of continuous dynamic recrystallization(CDRX) and geometric dynamic recrystallization(GDRX). Furthermore, interfacial defects were remarkably reduced while the nature of Al/Al and Al/B4C interfacial bonding was changed from sheer mechanical interlocking to metallurgical bonding which facilitated efficient transference of applied load to uniformly dispersed bimodal B4C particles. As a result, ultimate tensile strength(UTS) and elongation(EL) of the as-deposited sample were simultaneously improved from 37 to 185 MPa and 0.3% to 6.2%, respectively.

MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films wer e investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductiv ity measurement and scanning electron microscopy. Only the strong 002 peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films wa s found to alter the film's microstructure and properties, including crystallini ty, porosity, grain size, internal stress level and resistivity. It was also fou nd that after annealing, the conductivity of poorly conductive samples often imp roved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films can be decre ased from 102 to 10-4Ω·cm after annealing in nitrogen. To explain the effects of annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cau se diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films, which may decrease the resistiv ity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

The characteristics, formation and exploration progress of the potash deposits on the Khorat Plateau, Thailand and Laos, Southeast Asia

The giant potash deposit on the Khorat Plateau is one of the most promising targets for exploitation of potassium salts.So far,many researches and geologic survey have been conducted on the giant potash deposits.Hence,it is necessary to make an overall review on the potash deposits.The potash deposit on the Khorat Plateau was formed during the Middle to Late Cretaceous,during which seawater was enriched in Ca2+and depleted in SO42-compared with those of modern seawater.In addition to seawater,continental water and hydrothermal fluids could have affected the evaporite basins.The seawater was probably derived from Tethys ocean,and the brine should have evaporated to some extent before entering into the basin systems based on the evidence of absence of carbonates and unproportionate sulphate compared with chloride salts.The paleo-climate during Middle to Late Cretaceous was characterized as high temperature and extremely arid environment,which is favourable for deposition of potassium-magnesium saline minerals.The major saline minerals are of anhydrite,halite,carnallite,sylvite and,tachyhydrite,with trace amounts of borates.The resources of the potash deposit on the Khorat Plateau could be approximately as much as 400×109 t of carnallite and 7×109 t of sylvite.The evaporite sequences have been deformed and altered by postdepositinal processes,including tectonic movements and chemical alteration.Salt domes were formed in the postdepositional processes.Based on the analyses of geophysical surveys and drilling projects,high-quality sylvinite ores are commonly found at the flanks of those salt domes due to incongruent dissolution of carnallite.The furure potential prospecting areas for the highquality sylvinite ores would be on the edges of the Khorat Plateau.

Improved interface properties of an HfO_2 gate dielectric GaAs MOS device by using SiN_x as an interfacial passivation layer

A GaAs metal-oxide-semiconductor （MOS） capacitor with HfO2 as gate dielectric and silicon nitride （SiNx） as the interlayer （IL） is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance- voltage characteristic, lower leakage current density （0.785 × 10^-6 Alcm^2 at Vfo ＋ 1 V） and lower interface-state density （2.9 × 10^12 eV^-1 ·cm^-2） compared with other samples with N2- or NH3-plasma pretreatment. The influences of post- deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600 ℃ exhibits better electrical properties than that annealed at 500 ℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.

Development of ZnTe film with high copper doping efficiency for solar cells

Since a hole barrier was formed in back contact due to mismatch of work function, the back contact material for CdTe cell has been a significant research direction. The ZnTe:Cu is an ideal back contact material, which reduces the valence band discontinuity and can be used as the electron back reflection layer to inhibit interface recombination. The conductivity of ZnTe:Cu film is improved by applying RF-coupled DC sputtering and post-deposition heat treatment. The doping efficiency is computed as the ratio of free hole density and copper concentration, which can be correlated with performance for CdTe-based solar cell. The higher doping efficiency means that more copper atoms substitute for Zn sites in ZnTe lattices and less mobilized copper atoms remain which can enter into the CdTe absorber layer. Copper atoms are suspected as dominant element for CdTe-based cell degradation. After optimizing the ZnTe:Cu films, a systematic study is carried out to incorporate ZnTe:Cu film into CdTe solar cell. The EQE spectrum is kept relatively stable over the long wavelength range without decreasing. It is proved that the conduction band barrier of device with ZnTe:Cu/Au contact material has an effect on the EQE response, which works as free electron barrier and reduces the recombination rate of free carrier. According to the dark J-V data or the light J-V data in the linear region, the current indicates that the intercept gives the diode reverse saturation current. The results of ideality factor indicate that the dominant recombination occurs in the space charge region. In addition, the space charge density and depletion width of solar cell can be estimated by C-V profiling.

Deposition Process of Dust Microparticles from Aerosol to Snow-Firn Pack on Glacier No. 1 in Eastern Tianshan Mountains, China

ABSTRACT： Samples were continuously collected from aerosol, fresh snow, and snow pits on Glacier No. 1 at Urumqi River source in eastern Tianshan （天山） Mountains. The deposition processes and the characteristics of mineral dust microparticles from aerosol to fresh snow, and then evolution to the snow pit were determined. Total dust microparticle concentration in the surface snow and aerosol showed a similar temporal variation trend, which was strongly associated with regional and local at- mospheric circulation in the Tianshan Mountains region of Central Asia. Especially from November to February, the correlation coefficient of microparticles concentration in surface snow and aerosol is very high （R2=0.7）. Vertical profiles of microparticles in the snow pits showed that observed dust layers were in high correlation with concentration peaks of large microparticles （d〉10 μm）, but low correlation with that of fine microparticles （d〈1μm）. Moreover, explicit post-depositional process of dust particles was studied by tracking some typical dust concentration peaks in the snow pit. We find that late sum- mer is a key period for post-deposition of dust particles in the snow, as particle concentration peaks in the snow pit evolve intensely during this period. Such evolutional pattern of large particles makes it possible to preserve information of atmospheric dust in the snow, which offers an available proof to reconstruct historical climate using ice cores on Glacier No. 1 and other gla- ciers in the Tianshan Mountains.

Review on incorporation of alkali elements and their effects in Cu(In,Ga)Se_(2)solar cells

Cu(In,Ga)Se_(2)(CIGS)is a promising candidate to replace crystalline silicon solar cells and dominate the photovoltaic market in the future.Alkali elements such as sodium(Na),potassium(K),rubidium(Rb),and Cesium(Cs)are commonly accepted as indispensable parts to boost cell efficiencies of CIGS thin-film solar cells.Therefore,a comprehensive understanding of alkali effects on the electronic and chemical properties of the CIGS layer as well as the underlying mechanisms is of paramount importance for achieving high-performance solar cells.This paper reviews the development process and incorporation pathways of alkalis and then overviews the roles of different alkali elements and their effects on CIGS cells in detail.Furthermore,the unsolved problems and future development prospects are also proposed.Overall,the understanding and development of widely adopted alkali-fluoride post-deposition treatments(PDTs)are still underway,and together with newly updated research,it will likely enable the CIGS technology to make the conversion efficiency closer to its theoretical limit.

Control of the hydrophobicity of rare earth oxide coatings deposited by solution precursor plasma spray by hydrocarbon adsorption

The basis of the hydrophobicity of lanthanide rare earth oxides(REOs)has been the subject of considerable debate.To explore this question,the wetting behaviors and surface compositions of hierarchicallystructured Yb_(2)o_(3)(one of the REOs)coatings and non-REO Al_(2)o_(3)coatings deposited via solution precursor plasma spray process were investigated in this work.The Yb_(2)o_(3)coatings were subjected to a number of post-deposition treatments including vacuum(1-15 Pa)treatment,Ar-plasma treatment,heat treatment(400℃),long-time air exposure and ultra-high vacuum(1×10^(-7)Pa)treatment.Subsequent characterization showed that different post-deposition treatments resulted in different wetting behavior for the Yb_(2)o_(3)coatings which correlated with the content of hydrocarbon on the surface.Yb_(2)o_(3)coatings exhibited reversible transitions between superhydrophobicity after vacuum treatment and superhydrophilicity after Ar-plasma or heat treatment,linked to hydrocarbon adsorption onto and desorption from the surface.Yb_(2)o_(3)coatings after long-time air exposure and ultra-high vacuum treatment both remained hydrophilic and showed a smaller hydrocarbon content than coatings after vacuum treatment.Al_(2)o_(3)coatings with hierarchical surface structures similar to the Yb_(2)o_(3)coatings showed an increase in WCA to only-170 after the same vacuum treatment,indicating the REO has a much higher affinity for hydrocarbon adsorption than Al_(2)o_(3),and that the content of hydrocarbon adsorbed on the surface of the REO determined the wetting behavior.