Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nanofiber

The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.

Potential Barrier Behavior of BaTiO3-(Bi0.5Na0.5)TiO3 Positive Temperature Coefficient of Resistivity Ceramic

High-Curie-temperature （Tc） lead-free Y-doped 90 mol%BaTiO3-1O mol%（Bi0.5Na0.5 ） TiO3 ceramic with positive temperature coefficient of resistivity （PTCR） is prepared by the conventional solid state reaction in nitrogen atmosphere. The PTCR ceramic exhibits a room-temperature resistivity （p25） of ~500Ω.cm and a high PTCR effect （maximum resistivity （ρmax）/minimum resistivity （ρmin）） of ~4.5 orders of magnitude. A capacitance- voltage approach is first employed to calculate the potential barrier （ Ф ） of the grain boundary of PTCR ceramic above Tc. It is found that the potential barrier changes from 0.17 to 0.77eV as the temperature increases from 180 to 220℃, which is very close to the predictions of the Heywang-Jonker model, suggesting that the capacitance-voltage method is valid to estimate the potential barrier of PTCR thermistor ceramics.

Anisotropic Ballistic Transport through a Potential Barrier on Monolayer Phosphorene

We demonstrate theoretically the anisotropic quantum transport of electrons through a single barrier on monolayer phosphorene. Using an effective k .p Hamiltonian, we find that the transmission probability for transport through n-n-n （or n p-n） junction is an oscillating function of the incident angle, the barrier height, as well as the incident energy of electrons. The conductance in such systems depends sensitively on the transport direction due to the anisotropic effective mass. By tuning the Fermi energy and gate voltage, the channels can be transited from opaque to transparent, which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.

Electronic transport for armchair graphene nanoribbons with a potential barrier

This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon （AGNR）. Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.

Digital literacy as a potential barrier to implementation of cardiology tele-visits after COVID-19 pandemic: the INFO-COVID survey

BACKGROUND During the COVID-19 pandemic,the implementation of telemedicine has represented a new potential option for outpatient care.The aim of our study was to evaluate digital literacy among cardiology outpatients.METHODS From March to June 2020,a survey on telehealth among cardiology outpatients was performed.Digital literacy was investigated through six main domains:age;sex;educational level;internet access;availability of internet sources;knowledge and use of teleconference software programs.RESULTS The study included 1067 patients,median age 70 years,41.3%females.The majority of the patients(58.0%)had a secondary school degree,but among patients aged≥75 years old the most represented educational level was primary school or none.Overall,for internet access,there was a splitting between"never"(42.1%)and"every day"(41.0%),while only 2.7%answered"at least 1/month"and 14.2%"at least 1/week".In the total population,the most used devices for internet access were smartphones(59.0%),and WhatsApp represented the most used app(57.3%).Internet users were younger compared to non-internet users(63 vs.78 years old,respectively)and with a higher educational level.Age and educational level were associated with nonuse of internet(age-per 10-year increase odds ratio(OR)=3.07,95%CI:2.54-3.71,secondary school OR=0.18,95%CI:0.12-0.26,university OR=0.05,95%CI:0.02-0.10).CONCLUSIONS Telemedicine represents an appealing option to implement medical practice,and for its development it is important to address the gaps in patients’digital skills,with age and educational level being key factors in this setting.

Nanoscale control of grain boundary potential barrier, dopant density and filled trap state density for higher efficiency perovskite solar cells

In this work,grain boundary(GB)potential barrier(ΔφGB),dopant density(Pnet),and filled trap state density(PGB,trap)were manipulated at the nanoscale by exposing the fabricated perovskite films to various relative humidity(RH)environments.Spatial mapping of surface potential in the perovskite film revealed higher positive potential at GBs than inside the grains.The averageΔφGB,Pnet,and PGB,trap in the perovskite films decreased from 0%RH to 25%RH exposure,but increased when the RH increased to 35%RH and 45%RH.This clearly indicated that perovskite solar cells fabricated at 25%RH led to the lowest average GB potential,smallest dopant density,and least filled trap states density.This is consistent with the highest photovoltaic efficiency of 18.16%at 25%RH among the different relative humidities from 0%to 45%RH.

Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode,a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation,NiPt60 sputtering,silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4μm and（2.2-2.4）×10^15 cm^-3 doping concentration.The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C,that is 50°C higher than that of the traditional one;the reverse voltage capacity VR can reach 112 V,that is 80 V higher than that of the traditional one;the leakage current is only 2μA and the forward conduction voltage drop is VF=0.71 V at forward current If =3 A.

Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

The charge transfer potential barrier （CTPB） formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode （PPD） CMOS image sensors （CIS）, and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was pertbrmed in detail on the principle of the proposed method. Application of the measurements oil a prototype PPD-CIS chip with an array of 160 ×160 pixels is demonstrated. Such a method intends to shine new light oil the guidance for the lag-free and high-speed sensors optimization based on PPD devices.

Effect of a barrier potential on soliton dynamical characteristics in condensates

By using the multiple-scale method, this paper analytically studies the effect of a barrier potential on the dynamical characteristics of the soliton in Bose Einstein eondensates. It is shown that a stable soliton is exhibited at the top of the barrier potential and the region of the absence of the barrier potential. Meanwhile, it is found that the height of the barrier potential has an important effect on the dark soliton dynamical characteristics in the condensates. With the increase of height of the barrier potential, the amplitude of the dark soliton becomes smaller, its width is narrower, and the soliton propagates more slowly.

Boundary Conditions for Sturm-Liouville Equation with Transition Regions and Barriers or Wells

By means of expansions of rapidly in infinity decreasing functions in delta functions and their derivatives, we derive generalized boundary conditions of the Sturm-Liouville equation for transitions and barriers or wells between two asymptotic potentials for which the solutions are supposed as known. We call such expansions “moment series” because the coefficients are determined by moments of the function. An infinite system of boundary conditions is obtained and it is shown how by truncation it can be reduced to approximations of a different order (explicitly made up to third order). Reflection and refraction problems are considered with such approximations and also discrete bound states possible in nonsymmetric and symmetric potential wells are dealt with. This is applicable for large wavelengths compared with characteristic lengths of potential changes. In Appendices we represent the corresponding foundations of Generalized functions and apply them to barriers and wells and to transition functions. The Sturm-Liouville equation is not only interesting because some important second-order differential equations can be reduced to it but also because it is easier to demonstrates some details of the derivations for this one-dimensional equation than for the full three-dimensional vectorial equations of electrodynamics of media. The article continues a paper that was made long ago.

Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier

One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.

Carrier transport barrier in AlGaN-based deep ultraviolet LEDs on offcut sapphire substrates

AlGaN-based light-emitting diodes(LEDs)on offcut substrates enhance radiative emission via forming carrier localization centers in multiple quantum wells(MQWs).This study introduces the carrier transport barrier concept,accessing its impact on the quantum efficiency of LEDs grown on different offcut sapphire substrates.A significantly enhanced internal quantum efficiency(IQE)of 83.1%is obtained from MQWs on the 1°offcut sapphire,almost twice that of the controlled 0.2°offcut sample.Yet,1°offcut LEDs have higher turn-on voltage and weaker electroluminescence than 0.2°ones.Theoretical calculations demonstrate the existence of a potential barrier on the current path around the step-induced Ga-rich stripes.Ga-rich stripes reduce the turn-on voltage but restrict sufficient driving current,impacting LED performance.

Introduction to Thermo-Photo-Electronics

Building the foundations of Thermo-Photo-Electronics became possible only after the correction of thermodynamic errors in the traditional theory of semiconductor Electronics and Photo-Electronics.It is these errors that determined the output of the asymptotics of the operating parameters of semiconductor electronic devices,in particular,both the saturation of the limiting clock frequency of processors,and the saturation of the efficiency of both thermoelectric and photoelectric converters.But in semiconductors,although these thermodynamic errors manifested themselves not only in the instrumental,but also in the technological aspect,they could not prohibit semiconductor Electronics itself,unlike Electronics based on other materials.It’s just that a number of qualitative mistakes were made in the theory of semiconductor devices and photo devices.In this work,it is shown that the energy band diagram of semiconductor contacts itself was constructed with a significant omission-without taking into account the temperature force on the contact.At the same time,because of the incorrect calculation of currents according to the outdated formulas of Richardson-Langmuir-Deshman,there were also PROHIBITIONS.So the practitioners compensated for the errors of the theory with“empirical corrections”.So electronics engineers often made devices not according to a strict theory(which simply did not exist until now),but on a hunch and according to empirical local laws.And only the correction of the historical mistakes made it possible to expand the phenomenology of the description of processes in a Solid Body,on the basis of which it is possible to make calculations of highly efficient elements of Photo-Thermo-Electronics.

具有勢壘的Sturm-Liouville算子的特徵值和特徵函數

We aim to find the eigenvalues and eigenfunctions of the barrier potential case for Strum-Liouville operator on the finite interval [0,π] when λ > 0. Generally, the eigenvalue problem for the Sturm-Liouville operator is often solved by using integral equations, which are sometimes complex to solve, and difficulties may arise in computing the boundary values. Considering the said complexity, we have successfully developed a technique to give the asymptotic formulae of the eigenvalue and the eigenfunction for Sturm-Liouville operator with barrier potential. The results are of significant interest in the field of quantum mechanics and atomic systems to observe discrete energy levels.

Influence of sintering schedule on the electrical properties of Mn(NO_3)_2-doped Ba_(0.92)Ca_(0.08)TiO_3 PTCR ceramics

The relationship of electrical properties of Mn-doped Ba_(0.92)Ca_(0.08)TiO_3PTCR (positive temperature coefficient resistance) ceramics with two sintering schedules wasdiscussed. Using TEM (transmission electron microscope) combined with EDS (energy dispersive X-rayspectrometer), the Mn ions distributed at grain boundaries were analyzed. The results show that thePTCR effect of Mn-doped PTCR ceramics is more dependent on the sintering schedule than those of Mnfree. The phenomenon may be caused by the valence states variance of Mn ions segregated at the grainboundaries.

Correlation between the Low-Temperature Photoluminescence Spectra and Photovoltaic Properties of Thin Polycrystalline CdTe Films

A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.

Effects of mechanical loadings on the performance of a piezoelectric hetero-junction

A fully-coupled model for a piezoelectric hetero-junction subjected to a pair of stresses is proposed by discarding the depletion layer approximation.The effect of mechanical loadings on PN junction performance is discussed in detail.Numerical examples are carried out for a p-Si/ZnO-n hetero-junction under a pair of stresses acting on the ntype ZnO portion near the PN interface,where ZnO has the piezoelectric property while Si is not.It is found that the bottom of conduction band is lowered/raised near the two loading points due to the decrease/increase in the electron potential energy there induced by a tensile-stress mode via sucking in majority-carriers from two outside regions,which implies appearance of a potential barrier and a potential well near two loading points.Furthermore,the barrier height and well depth gradually become large with increasing tensile stress such that more and more electrons/holes are inhaled in loading region from the n-/p-zone,respectively.Conversely,rising/dropping of conduction band bottom is brought out near the two loading points by a compressive-stress mode due to the increase/decrease in the potential energy of electrons by pumping out the majority-carriers from the loading region to the two outside regions.Therefore,a potential well and a potential barrier are induced near the two loading points,such that more and more electrons/holes are driven away from the loading region to the n-zone/p-zone,respectively,with the increasing compressive stress.These effects are important to tune the carrier recombination rate near the PN interface.Thus,the present study possesses great referential significance to piezotronic devices.

Injection and transport of electric charge in a metal/copolymer structure

The dynamical processes of the electric charge injection and transport from a metal electrode to the copolymer are investigated by using a nonadiabatic dynamic approach. The simulations are performed within the framework of an extended version of the one-dimensional Su-Schrieffer-Heeger （SSH） tight-binding model. It is found that the electric charge can be injected into the copolymer by increasing the applied voltage. For different structures of the copolymer, the critical voltage biases are different and the motion of the injected electric charge in the copolymer varies obviously. For the copolymer with a barrier-well-barrier configuration, the injected electric charge forms a wave packet due to the strong electron-lattice interaction in the barrier, then comes into the well and will be confined in it under a weak electric field. Under a medium electric field, the electric charge can go across the interface of two homopolymers and enter into the other potential barrier. For the copolymer with a well-barrier-well configuration, only under strong enough electric field can the electric charge transfer from the potential well into the barrier and ultimately reach a dynamic balance.

Critical Length of Double-Walled Carbon Nanotubes Based Oscillators

The critical lengths of an oscillator based on double-walled carbon nanotubes(DWCNTs)are studied by energy minimization and molecular dynamics simulation.Van der Waals(vdW)potential energy in DWCNTs is shown to be changed periodically with the lattice matching of the inner and outer tubes by using atomistic models with energy minimization method.If the coincidence length between the inner and outer tubes is long enough,the restoring force cannot drive the DWCNT to slide over the vdW potential barrier to assure the DWCNT acts as an oscillator.The critical coincidence lengths of the oscillators are predicted by a very simple equation and then confirmed with energy minimization method for both the zigzag/zigzag system and the armchair/armchair system.The critical length of the armchair/armchair system is much larger than that of the zigzag/zigzag system.The vdW potential energy fluctuation of the armchair/armchair system is weaker than that of the zigzag/zigzag system.So it is easier to slide over the barrier for the armchair/armchair system.The critical lengths of zigzag/zigzag DWCNTbased oscillator are found increasing along with temperature,by molecular dynamics simulations.