A novel method for analysing the performance of power saving class of Type III in IEEE 802.16e is proposed, which is applicable to design, maintenance and management for mobile wireless metropolitan area network. Cons...A novel method for analysing the performance of power saving class of Type III in IEEE 802.16e is proposed, which is applicable to design, maintenance and management for mobile wireless metropolitan area network. Considering the memoryless nature of user initiated packet arrival, a Geom/G/1 queue model with multiple vacations and setup period is built to capture the principle for the power saving class of Type III. By using an embedded Markov chain method and the boundary state variable theory, we obtain the queueing measures such as queueing length, waiting time and busy cycle in steady state. Correspondingly, we derive explicitly the performance measures for the power saving class of Type III in terms of handover ratio, energy saving ratio, and average packet response time. Based on numerical results, we develop a cost function to determine numerically the optimal length of sleep window and the minimal cost with different offered loads.展开更多
This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana...This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.展开更多
This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasi...This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasitics of a transistor significantly increase the difficulty of harmonic manipulation, compared to low-frequency cases. To overcome this issue, we propose a novel design methodology based on a band-reject, low-pass, output matching network, which is realized with passive components. This network provides optimal fundamental impedance and allows harmonic control up to the third order to enable an efficient Class-F behavior. The implemented PA exhibits performance at 2.5 GHz with a 50% PAE, 14 dB gain, and 10 W output power.展开更多
This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a h...This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a high 37 dB output power dynamic range with good average power adding efficiency. The measurement results show that the PA achieves a high power gain of 23 dBm and power added efficiency (PAE) by 38%. The circuit was post layout simulated in a standard 0.18 μm CMOS technology.展开更多
The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specification...The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.展开更多
An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influ...An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.展开更多
The first phase project of Huitengxile Wind Power Generation Farm in Inner Mongolia, with nine 600 kW wind power generators installed, was formally put into commercial operation on November 28,
The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improve...The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.展开更多
The accurate identification and classification of various power quality disturbances are keys to ensuring high-quality electrical energy. In this study, the statistical characteristics of the disturbance signal of wav...The accurate identification and classification of various power quality disturbances are keys to ensuring high-quality electrical energy. In this study, the statistical characteristics of the disturbance signal of wavelet transform coefficients and wavelet transform energy distribution constitute feature vectors. These vectors are then trained and tested using SVM multi-class algorithms. Experimental results demonstrate that the SVM multi-class algorithms, which use the Gaussian radial basis function, exponential radial basis function, and hyperbolic tangent function as basis functions, are suitable methods for power quality disturbance classification.展开更多
This action research aims to work out whether the effect of using powerpoint in an English class is positive or not.This research is carried out through the researcher’s lessons to a class of 45 students,experienced ...This action research aims to work out whether the effect of using powerpoint in an English class is positive or not.This research is carried out through the researcher’s lessons to a class of 45 students,experienced teachers and a philosophy teacher after previous meeting with the researcher are invited to observe the lessons with observation forms,questionnaires are completed by the students in the class and after class discussions.The conclusion from this action research is that in the context of the time and place when research is made,the Effect of Using Power Point in an English class is positive.展开更多
A stereo 1.5bit delta-sigma digital-analog converter （△∑ DAC） integrated with a filterless class D power amplifier is introduced. It consumes no static power, and its maximum output power is 436mW with an 8Ω load...A stereo 1.5bit delta-sigma digital-analog converter （△∑ DAC） integrated with a filterless class D power amplifier is introduced. It consumes no static power, and its maximum output power is 436mW with an 8Ω load. Its output dynamic range exceeds 100dB. The circuit is implemented with a TSMC 0. 18μm process. The die area is 0. 28mme. The supply voltage is 1. gV for the digital part and 3.3V for class D.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
基金Supported by the National Natural Science Foundation of China (No.10671170,60773100)the Natural Science Foundation of Hebei Province,China (No.2009000475)
文摘A novel method for analysing the performance of power saving class of Type III in IEEE 802.16e is proposed, which is applicable to design, maintenance and management for mobile wireless metropolitan area network. Considering the memoryless nature of user initiated packet arrival, a Geom/G/1 queue model with multiple vacations and setup period is built to capture the principle for the power saving class of Type III. By using an embedded Markov chain method and the boundary state variable theory, we obtain the queueing measures such as queueing length, waiting time and busy cycle in steady state. Correspondingly, we derive explicitly the performance measures for the power saving class of Type III in terms of handover ratio, energy saving ratio, and average packet response time. Based on numerical results, we develop a cost function to determine numerically the optimal length of sleep window and the minimal cost with different offered loads.
文摘This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.
文摘This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasitics of a transistor significantly increase the difficulty of harmonic manipulation, compared to low-frequency cases. To overcome this issue, we propose a novel design methodology based on a band-reject, low-pass, output matching network, which is realized with passive components. This network provides optimal fundamental impedance and allows harmonic control up to the third order to enable an efficient Class-F behavior. The implemented PA exhibits performance at 2.5 GHz with a 50% PAE, 14 dB gain, and 10 W output power.
文摘This paper presents a 1.8 GHz class-E controlled power amplifier (PA). The proposed power amplifier is designed with two-stage architecture. The main advantage of the proposed technique for output control power is a high 37 dB output power dynamic range with good average power adding efficiency. The measurement results show that the PA achieves a high power gain of 23 dBm and power added efficiency (PAE) by 38%. The circuit was post layout simulated in a standard 0.18 μm CMOS technology.
文摘The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016801)
文摘An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.
文摘The first phase project of Huitengxile Wind Power Generation Farm in Inner Mongolia, with nine 600 kW wind power generators installed, was formally put into commercial operation on November 28,
文摘The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.
文摘The accurate identification and classification of various power quality disturbances are keys to ensuring high-quality electrical energy. In this study, the statistical characteristics of the disturbance signal of wavelet transform coefficients and wavelet transform energy distribution constitute feature vectors. These vectors are then trained and tested using SVM multi-class algorithms. Experimental results demonstrate that the SVM multi-class algorithms, which use the Gaussian radial basis function, exponential radial basis function, and hyperbolic tangent function as basis functions, are suitable methods for power quality disturbance classification.
文摘This action research aims to work out whether the effect of using powerpoint in an English class is positive or not.This research is carried out through the researcher’s lessons to a class of 45 students,experienced teachers and a philosophy teacher after previous meeting with the researcher are invited to observe the lessons with observation forms,questionnaires are completed by the students in the class and after class discussions.The conclusion from this action research is that in the context of the time and place when research is made,the Effect of Using Power Point in an English class is positive.
文摘A stereo 1.5bit delta-sigma digital-analog converter （△∑ DAC） integrated with a filterless class D power amplifier is introduced. It consumes no static power, and its maximum output power is 436mW with an 8Ω load. Its output dynamic range exceeds 100dB. The circuit is implemented with a TSMC 0. 18μm process. The die area is 0. 28mme. The supply voltage is 1. gV for the digital part and 3.3V for class D.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
